Enhanced conductivity of infrared transparent Bi 2 Se 3 thin films as anti-interference coatings for infrared detectors

Ya-Hui Chuai,Yun-Fan Wang,Yu Bai

DOI: https://doi.org/10.1016/j.optmat.2023.113804

IF: 3.754

2023-05-10

Optical Materials

Abstract:Infrared transparent conductive coatings are extensively utilized in both military and civilian infrared detectors due to their superior infrared transmission and electromagnetic shielding properties. It is a major scientific challenge to find a solution to the contradiction between high transmittance and low conductivity in the area of wide-band infrared transparent conductive film research. This study utilized new material systems and film preparation technologies to clarify the problem. A higher c-axis preferred orientation infrared transparent conducting Bi 2 Se 3 thin film on a p-Si (111) substrate was developed using plasma-enhanced chemical vapor deposition (PECVD) technology. At room temperature, the film exhibited n-type conductivity, with high surface mobility of 2565 cm 2 /V·s and low surface resistivity of 2.6 × 10 −5 Ω cm. In the mid-IR and far-IR regions, the produced Bi 2 Se 3 thin film displayed transparency of 90% and 80%, respectively. To the best of our knowledge, this n-type conductive thin film created using chemical vapor deposition is the best IR-transparent thin film to date. Using this film, a Bi 2 Se 3 /p-Si heterojunction diode with a maximum voltage of 0.7 V was created. Young's modulus and hardness were determined to be 80 ± 5.5 GPa and 15 ± 2.2 GPa, respectively, for the film. It demonstrates the film's resistance to wear and deformation. The findings imply that Bi 2 Se 3 film may be used as an anti-interference coating for infrared detectors and other optoelectronic devices throughout a wide wavelength range, from the mid-IR to the far-IR, due to its good optical transparency and electrical conductivity.

materials science, multidisciplinary,optics