Single-Layer BI: A Multifunctional Semiconductor with Ferroelectricity, Ultrahigh Carrier Mobility, and Negative Poisson’s Ratio

Shiying Shen,Qian Wu,Yan Liang,Baibiao Huang,Ying Dai,Yandong Ma

DOI: https://doi.org/10.1103/physrevapplied.15.014027

IF: 4.6

2021-01-15

Physical Review Applied

Abstract:Developing two-dimensional multifunctional materials is highly desirable for nanoscale device applications. Herein, by means of first-principles calculations, we demonstrate a promising two-dimensional multifunctional semiconductor with ferroelectricity, ultrahigh carrier mobility, and negative Poisson’s ratio in single-layer BI. We show that single-layer BI exhibits intrinsic ferroelectricity, derived from its asymmetric structure, and the ferroelectricity features an in-plane electric polarization as large as 3.3×10−10Cm−1, which is beneficial for nonvolatile memories. Owing to its large band dispersion, single-layer BI is also found to harbor an extremely high carrier mobility (1.17×105cm2V−1s−1), even comparable to that of graphene, suggesting its potential for high-performance electronics and bulk photovoltaic effect. This, combined with the moderate band gap, renders single-layer BI with a high absorption coefficient (105cmm−1) from near-infrared to ultraviolet light. In addition, we unveil that single-layer BI is a long-sought-after auxetic material with a negative Poisson’s ratio of −0.31. All of these findings make single-layer BI a compelling multifunctional material, offering a versatile platform for diverse nanoscale devices applications.

physics, applied