The Unprecedented Highest‐Layer‐Number Ferroelectric Semiconductor of 2D Homologous Single‐Phase Perovskites Tailored by Regulating Thickness of Inorganic Frameworks

Wuqian Guo,Haojie Xu,Yu Ma,Yi Liu,Beibei Wang,Liwei Tang,Lina Hua,Junhua Luo,Zhihua Sun
DOI: https://doi.org/10.1002/adfm.202207854
IF: 19
2022-08-17
Advanced Functional Materials
Abstract:The authors present an unprecedented highest‐layer‐number ferroelectric semiconductor of 2D homologous perovskites, IA2Cs3Pb4Br13, by regulating the thickness of inorganic sheets, which shows higher Curie temperature and superior semiconductor merits to low‐numbered homologues. These findings open an avenue toward the targeted performance optimization of electric‐ordered materials and promote future application in smart photoelectric devices. Ferroelectric semiconductors represent an exciting branch of new‐generation optoelectronic devices. However, regarding severe polarization deterioration caused by leakage current, it is challenging to couple ferroelectricity and semiconductive properties in a single‐phase material. The first quadrilayered ferroelectric semiconductor of 2D homologous perovskites, IA2Cs3Pb4Br13 (IA = isoamylammonium), showing distinctive ferroelectric characteristics of symmetry breaking at 351 K and large polarization of 4.2 μC cm‐2 is presented here. The design strategy of increasing layer‐number endows higher Curie temperature and superior semiconductor merits than other lower‐layered members (IA2Csn‐1PbnBr3n+1, n = 1–3). Bulk photovoltaic effects in IA2Cs3Pb4Br13 result in a notable dichroism up to ≈1.2 for self‐driven polarized‐light detection. This unprecedented work opens an avenue toward the targeted performance optimization of electric‐ordered functional materials.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
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