Band Engineering and Van Hove Singularity on HfX 2 Thin Films (X = S, Se, or Te)
Harvey N. Cruzado,John Symon C. Dizon,Gennevieve M. Macam,Rovi Angelo B. Villaos,Thi My Duyen Huynh,Liang-Ying Feng,Zhi-Quan Huang,Chia-Hsiu Hsu,Shin-Ming Huang,Hsin Lin,Feng-Chuan Chuang,Harvey N. Cruzado,John Symon C. Dizon,Gennevieve M. Macam,Rovi Angelo B. Villaos,Thi My Duyen Huynh,Liang-Ying Feng,Zhi-Quan Huang,Chia-Hsiu Hsu,Shin-Ming Huang,Hsin Lin,Feng-Chuan Chuang
DOI: https://doi.org/10.1021/acsaelm.0c00907
IF: 4.494
2021-03-11
ACS Applied Electronic Materials
Abstract:Two-dimensional transition metal dichalcogenides (TMDs) have become well-known due to their versatile and tunable physical properties for potential applications, specifically on low-power and optical devices. Here, we explored the structural stability and electronic properties of bulk and thin-film (from 1 up to 6 layers) structures of hafnium dichalcogenides (HfX<sub>2</sub>, X = S, Se, or Te) using first-principles calculations. Our calculations reveal that the most stable phase is 1T for both thin films and bulk. The bulk and thin-film structures of HfTe<sub>2</sub> are semimetallic, while those of HfS<sub>2</sub> and HfSe<sub>2</sub> are insulating. Both HfS<sub>2</sub> and HfSe<sub>2</sub> thin films exhibit a decreasing band gap with increasing thickness, while HfTe<sub>2</sub> thin films remain semimetallic with increasing number of layers. Moreover, van Hove singularity (vHs), due to the contribution of the p<sub><i>z</i></sub> orbital from S atoms, is observed in 3L-HfS<sub>2</sub> at the valence band maximum, which can be further enhanced by applying an in-plane biaxial strain, suggesting possible superconductivity. Finally, the bulk and monolayer band structures of HfTe<sub>2</sub>, under HSE06 and GGA + <i>U</i> with the effective Hubbard <i>U</i> parameter of 4.6 eV, are in good agreement with the experimental ARPES data. Our results indeed show that HfX<sub>2</sub> have sensitive and tunable electronic properties through film thickness control and strain for future potential applications.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsaelm.0c00907?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsaelm.0c00907</a>.Table of bulk bandgaps of 1T HfX<sub>2</sub>; table of monolayer bandgaps of 1T HfX<sub>2</sub>; bulk band structures of 1T HfX<sub>2</sub>; bulk band structure with orbital contribution of 1T HfTe<sub>2</sub>; bulk band structure of 1T HfTe<sub>2</sub> under GGA + <i>U</i>; orbital analysis of thin film HfS<sub>2</sub>; orbital analysis of thin film HfSe<sub>2</sub>; orbital analysis of thin film HfTe<sub>2</sub>; charge density of HfS<sub>2</sub> thin films; band structure and DOS of 3L-HfS<sub>2</sub> under strain; orbital analysis of 3L-HfS<sub>2</sub> under strain; orbital analysis of 3L-HfSe<sub>2</sub> under strain; orbital analysis of 3L-HfTe<sub>2</sub> under strain (<a class="ext-link" href="/doi/suppl/10.1021/acsaelm.0c00907/suppl_file/el0c00907_si_001.pdf">PDF</a>)(<a class="ext-link" href="/doi/suppl/10.1021/acsaelm.0c00907/suppl_file/el0c00907_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,engineering, electrical & electronic