Raman spectroscopy of atomically thin HfX 2 (X=S, Se)

Chhor Yi LY,CHENDA VONG,Tharith Sriv,Hyeonsik Cheong

DOI: https://doi.org/10.1088/2053-1583/ad70c8

IF: 6.861

2024-08-21

2D Materials

Abstract:We investigated interlayer modes of few-layer HfX 2 (X=S, Se) by using low-frequency micro-Raman spectroscopy with three excitation energies (1.96 eV, 2.33 eV, 2.54 eV) under vacuum condition (10 −6 Torr). We observed interlayer modes in HfSe 2 when the 2.54-eV excitation energy was used. The low-frequency Raman spectra reveal a series of shear and breathing modes (<50 cm −1 ) that are helpful for identifying the number of layers. The in-plane E g and out-of-plane A 1g modes of HfSe 2 are located at ~150 cm −1 and ~200 cm −1 , respectively. In HfS 2 , in-plane E g and out-of-plane A 1g optical phonons are observed at ~260 cm −1 and ~337 cm −1 , respectively. The in-plane and out-of-plane force constants of atomically thin HfSe 2 are obtained to be 1.87 ×10 19 N/m 3 and 6.55×10 19 N/m 3 , respectively, by fitting the observed interlayer modes using the linear chain model. These results provide valuable information on materials parameters for device designs using atomically-thin layered HfX 2 (X=S, Se).

materials science, multidisciplinary