Anomalies in the properties of Hf(S2−xTex)1−y and Hf(Se2−xTex)1−y near the metal-insulator transition

David T. Hodul,Angelica M. Stacy

DOI: https://doi.org/10.1016/0022-4596(84)90176-2

IF: 3.3

1984-10-01

Journal of Solid State Chemistry

Abstract:The solid solutions Hf(S2−xTex)1−y and Hf(Se2−xTex)1−y were prepared to examine changes in the electronic structure in a narrow composition range near the metal-insulator transition. Powder X-ray diffraction analysis and resistivity measurements are presented. The x3 dependence of the hexagonal c parameter for the sulfur solutions is due to large packing mismatches in the layers. In the selenium solutions, anomalous behavior is observed in the composition dependence of the a and c hexagonal lattice parameters in the range 0.05 < x < 0.10, y ∼ 0. Between these concentration limits, both lattice parameters show positive deviations from smooth behavior and the diffraction linewidths broaden. The temperature dependence of the resistivity suggests that the Hf(S2−xTex)1−y solutions have an energy of activation for conduction at room temperature for 0 < x < 78; the sample of composition x = 58 has a metal-insulator transition as a function of temperature below room temperature. The band gap goes to zero with composition for Hf(Se2−xTex)1−y in the range x = 0.080 to x = 0.095. Nonstoichiometry, phase separation, and changes from covalent to metallic bonding explain the structural and electronic changes observed in the seleno-telluride system near the metal-insulator transition.

chemistry, physical, inorganic & nuclear