Electrical transport crossover and large magnetoresistance in selenium deficient van der Waals HfSe2-x

Wenhao Liu Yangzi Zheng,Aswin Lakshmi Narayanan Kondusamy,David L. Scherm,Anton. V. Malko,Bing Lv

2024-03-19

Abstract:Transition metal dichalcogenides have received much attention in the past decade not only due to the new fundamental physics, but also due to the emergent applications in these materials. Currently chalcogenide deficiencies in TMDs are commonly believed either during the high temperature growth procedure or in the nanofabrication process resulting significant changes of their reported physical properties in the literature. Here we perform a systematic study involving pristine stochiometric HfSe2, Se deficient HfSe1.9 and HfSe1.8. Stochiometric HfSe2 transport results show semiconducting behavior with a gap of 1.1eV. Annealing HfSe2 under high vacuum at room temperature causes the Se loss resulting in HfSe1.9, which shows unconventionally large magnetoresistivity following the extended Kohler's rule at low temperatures below 50 K. Moreover, a clear electrical resistivity crossover, mimicking the metal-insulator transition, is observed in the HfSe1.9 single crystal. Further increasing the degree of deficiency in HfSe1.8 results in complete metallic electrical transport at all temperatures down to 2K. Such a drastic difference in the transport behaviors of stoichiometric and Se-deficient HfSe2 further emphasizes that defect control and engineering could be an effective method that could be used to tailor the electronic structure of 2D materials, potentially unlock new states of matter, or even discover new materials.

Materials Science

What problem does this paper attempt to address?

The problems that this paper attempts to solve mainly focus on exploring the influence of selenium deficiency on the electrical transport properties of hafnium diselenide (HfSe₂). Specifically, through systematically studying single - crystal samples with different degrees of selenium deficiency (from fully stoichiometric HfSe₂ to selenium - deficient HfSe₁.₈), the researchers aim to understand the following points:

1. **Changes in electrical transport properties**: How do the electrical transport properties of the material change as the degree of selenium deficiency increases? It is found that fully stoichiometric HfSe₂ exhibits typical semiconductor behavior, and as the degree of selenium deficiency increases, the material gradually exhibits metallic behavior. In particular, in HfSe₁.₈, this metallic behavior is very obvious at all temperatures.

2. **Magnetoresistance effect**: At low temperatures, the selenium - deficient HfSe₁.₉ sample exhibits an abnormally high magnetoresistance effect, which is different from the common quadratic behavior. The researchers further explored whether this abnormal magnetoresistance follows the Extended Kohler's Rule and found that it does, indicating that the change in carrier density with temperature in the material is an important factor.

3. **Changes in carrier density**: Through Hall effect measurements, the researchers found that as the degree of selenium deficiency increases, the carrier density increases significantly. For example, in HfSe₁.₉, the carrier density is approximately 6.6 × 10¹⁸ cm⁻³, and in HfSe₁.₈, the carrier density further increases to 3.9 × 10¹⁹ cm⁻³. These changes explain the transition of the material from a semiconductor to a metal.

4. **Stability of the material and storage conditions**: The study also emphasizes the influence of the preparation and storage conditions of the material on the degree of selenium deficiency. Vacuum storage at room temperature will lead to selenium loss, thereby changing the electrical transport properties of the material. This finding is of great significance for future experimental design and material applications.

In summary, through detailed research, this paper reveals the profound influence of selenium deficiency on the electrical transport properties of HfSe₂ and provides important experimental evidence for further understanding and regulating the electronic structure of two - dimensional materials.