Semiconductor-to-metal transition in HfSe2 under high pressure

Xueting Zhang,Bo Liu,Shuang Liu,Juanying Li,Ran Liu,Peng Wang,Qing Dong,Shujia Li,Hui Tian,Quanjun Li,Bingbing Liu
DOI: https://doi.org/10.1016/j.jallcom.2021.158923
IF: 6.2
2021-06-01
Journal of Alloys and Compounds
Abstract:In this study, we report the phase transitions and semiconductor-to-metal (S-M) transition of hafnium selenide (HfSe2) under high pressure through experiments and theoretical calculations. The starting hexagonal structure transforms to an intermediate phase and I4/mmm structure above 10 GPa, and then converts into the I4/mmm structure completely above 47.2 GPa. Pressure-induced S-M transition at ~10 GPa was revealed by infrared (IR) reflectivity and resistance measurements. Theoretical calculations indicate that the pressure-induced metallization occurs in the initial hexagonal phase, which arises from the overlap of the valance and conduction bands with the contribution of the Hf d and Se p orbitals under high pressure. Upon pressure releases, the I4/mmm phase transforms into the initial hexagonal structure. This work provides new insights into the structures and electronic states of HfSe2.
materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
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