Abstract:The evolution of information technology has been driven by the discovery of new forms of large magnetoresistance, such as giant magnetoresistance<a href="/articles/s41567-019-0621-6#ref-CR1">1</a>,<a href="/articles/s41567-019-0621-6#ref-CR2">2</a> and tunnelling magnetoresistance<a href="/articles/s41567-019-0621-6#ref-CR3">3</a>,<a href="/articles/s41567-019-0621-6#ref-CR4">4</a>, in magnetic multilayers. Recently, new types of this effect have been observed in much simpler bilayers consisting of ferromagnetic and non-magnetic thin films<a href="#ref-CR5">5</a>,<a href="#ref-CR6">6</a>,<a href="#ref-CR7">7</a>,<a href="#ref-CR8">8</a>,<a href="#ref-CR9">9</a>,<a href="/articles/s41567-019-0621-6#ref-CR10">10</a>. However, the magnitude of the change in resistance with magnetic field in these materials is very small, varying between 0.01 and 1%. Here, we demonstrate that non-magnetic–ferromagnetic bilayers consisting of a conducting non-magnetic InAs quantum well and an insulating ferromagnetic (Ga,Fe)Sb layer exhibit giant proximity magnetoresistance of approximately 80% at high magnetic field, and that its magnitude can be controlled by a gate. The mechanism for this large magnetoresistance is a strong magnetic proximity effect. The spin splitting in the InAs quantum well induced by the magnetic proximity effect can be varied between 0.17 meV and 3.8 meV by varying the gate voltage. In principle, this provides a mechanism to locally access Majorana fermions in InAs-based Josephson junctions<a href="#ref-CR11">11</a>,<a href="#ref-CR12">12</a>,<a href="#ref-CR13">13</a>,<a href="/articles/s41567-019-0621-6#ref-CR14">14</a> and introduces a new concept of magnetic-gating spin transistors in which the non-magnetic channel current is modulated by both electrical and magnetic means.

Magnetodielectric Coupling in Nonmagnetic Au/GaAs:Si Schottky Barriers

Room-temperature negative capacitance in a ferroelectric-dielectric superlattice heterostructure.

Magnetocapacitance oscillations dominated by giant Rashba spin orbit interaction in InAs/GaSb quantum wells separated by AlSb barrier

Negative Capacitance in Au/CuInGaSe2/SiO2/n-Si/Al Schottky Barrier Diode Devices

Capacitance-voltage characteristics of a metal-carbon-silicon structure

Suppression of Exciton Recombination in Symmetric GaAs0.7Sb0.3/GaAs/GaAs0.7P0.3 Coupled Quantum Wells Induced by an In-Plane Magnetic Field

Capacitance-Voltage Characteristics Of A Schottky Junction Containing Sige/Si Quantum Wells

Band filling and cross quantum capacitance in ion gated semiconducting transition metal dichalcogenide monolayers

Giant gate-controlled proximity magnetoresistance in semiconductor-based ferromagnetic–non-magnetic bilayers

Magnetoresistance of Junctions made of Underdoped YBCO Separated by a Ga-doped YBCO Barrier

Strong magnetic field effect on above-barrier transport in Pb-p-HgCdTe Schottky barriers

Giant Room-Temperature Magnetocapacitance In Co2+ Doped Sno2 Dielectric Films

Magnetism induced by nonmagnetic dopants in zinc-blende SiC: First-principle calculations

The Effect of Surface Conductance on Lateral Gated Quantum Devices in Si/Sige Heterostructures

Schottky barriers in carbon nanotube heterojunctions

Quantum Magnetocapacitance in Ferromagnetic Nanocontacts

Spin-accumulation capacitance and its application to magnetoimpedance

Giant Magnetoresistance Effect in A Magnetic-Electric Barrier Structure

Magnetization-dependent Rectification Effect in a Ge-based Magnetic Heterojunction

Large magnetoresistance induced by quantum charge fluctuations in magnetic double dots

Negative Electrochemical Capacitance for a Double-Quantum-dot Device