Etching of Graphene Devices with a Helium Ion Beam

M. C. Lemme,D. C. Bell,J. R. Williams,L. A. Stern,B. W. H. Baugher,P. Jarillo-Herrero,C. M. Marcus

DOI: https://doi.org/10.1021/nn900744z

2009-10-08

Abstract:We report on the etching of graphene devices with a helium ion beam, including in situ electrical measurement during lithography. The etching process can be used to nanostructure and electrically isolate different regions in a graphene device, as demonstrated by etching a channel in a suspended graphene device with etched gaps down to about 10 nm. Graphene devices on silicon dioxide (SiO2) substrates etch with lower He ion doses and are found to have a residual conductivity after etching, which we attribute to contamination by hydrocarbons.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: how to achieve nano - scale precise etching on graphene devices to construct micro - structures with specific electrical properties. Specifically, the authors use Helium Ion Beam to etch graphene and monitor and verify the effect of the etching process through in - situ electrical measurements.

### Main Problems and Solutions

1. **Preparation of Nanostructures**:
- Although traditional electron - beam lithography and reactive - ion etching methods can achieve nano - scale structures, they have some shortcomings. For example, reactive - ion etching will erode the photoresist mask, resulting in disordered graphene edges; chemical methods may lead to graphene flakes with irregular shapes and uneven distribution, which are not suitable for integrated device applications.
- The paper proposes to use Helium Ion Microscope (HeIM) for nano - etching to overcome the limitations of the above methods.

2. **Regulation of Electrical Properties**:
- As a two - dimensional carbon material, the electrical properties of graphene can be regulated by changing its geometric structure. For example, by etching to form nanostructures such as nanoribbons or quantum dots, its electrical characteristics under different conditions can be studied.
- The paper shows how to use Helium Ion Beam etching to achieve precise control of the electrical properties of graphene, including etching a channel with a minimum feature size of about 10 nm on a suspended graphene device and verifying the electrical isolation effect of these structures.

3. **In - Situ Electrical Measurements**:
- In order to monitor in real - time the impact of the etching process on the electrical properties of graphene, the authors carried out in - situ electrical measurements in the Helium Ion Microscope. This enables the direct observation of current changes during the etching process, thus ensuring that the etching effect meets expectations.

### Conclusion

Through Helium Ion Beam etching, the authors successfully achieved the preparation of nano - scale structures on suspended graphene devices and verified their electrical isolation effect. For graphene devices on a silicon dioxide substrate, although a lower Helium Ion dose is required, due to the presence of surface contaminants, there is still a certain residual conductivity. If the contamination problem can be solved, Helium Ion Beam etching is expected to become a new nanofabrication method suitable for the fine processing of graphene devices.

### Formula Example

- The formula for calculating the line dose of Helium Ion Beam is:
\[
D = I\times t/L
\]
where \( D \) is the line dose (unit: nC/cm), \( I \) is the beam current intensity (unit: pA), \( t \) is the dwell time (unit: μs), and \( L \) is the pixel spacing (unit: nm).

Through these studies, the authors provide a new, efficient and controllable method for the nanofabrication of graphene devices.