Precision Cutting and Patterning of Graphene with Helium Ions

D. C. Bell,M. C. Lemme,L. A. Stern,J. R. Williams,C. M. Marcus

DOI: https://doi.org/10.1088/0957-4484/20/45/455301

2009-10-14

Abstract:We report nanoscale patterning of graphene using a helium ion microscope configured for lithography. Helium ion lithography is a direct-write lithography process, comparable to conventional focused ion beam patterning, with no resist or other material contacting the sample surface. In the present application, graphene samples on Si/SiO2 substrates are cut using helium ions, with computer controlled alignment, patterning, and exposure. Once suitable beam doses are determined, sharp edge profiles and clean etching are obtained, with little evident damage or doping to the sample. This technique provides fast lithography compatible with graphene, with ~15 nm feature sizes.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is how to use the Helium Ion Microscope (HIM) to achieve precise cutting and patterning of graphene. Specifically, the authors hope to perform nano - scale cutting and patterning on graphene without using any photoresist or other contact materials through Helium Ion Lithography (HIL).

### Main problems and challenges:
1. **Limitations of existing methods**:
- Electron Beam Lithography combined with Reactive Ion Etching (EBL - RIE): There is an uncontrollable under - etching phenomenon, which leads to a decline in pattern precision.
- Focused Ion Beam (FIB) direct etching in Transmission Electron Microscope (TEM): It is necessary to transfer graphene onto a TEM grid, which is not suitable for large - scale device manufacturing.

2. **Unique properties of graphene**:
- Graphene is a two - dimensional honeycomb - like carbon atom structure, with extremely high stability and strength, almost no defects, and has a unique electronic band structure.
- Many potential applications (such as high - speed field - effect transistors) require that graphene can be precisely patterned on the nano - scale.

3. **Advantages of the helium ion beam**:
- Compared with the traditional Gallium FIB, the helium ion beam has a smaller probe size (<0.5 nm) and can mill and sputter soft and brittle materials at a lower rate.
- Simulation results show that the interaction volume between the helium ion beam and the surface layer is small, so higher resolution and smaller feature sizes can be achieved.

### Solution:
Through experimental verification, the authors have demonstrated that the helium ion beam can be used to achieve precise cutting and patterning with a feature size of about 15 nm on graphene. In addition, they have also optimized the dose parameters of the helium ion beam to ensure clear edge profiles, clean etching, and less sample damage and doping.

### Conclusion:
This research has successfully proven that the lithography system configured with the helium ion microscope can achieve high - precision nano - patterning on graphene, providing new tools and technical means for the future development of graphene - based electronic devices.