Abstract:Recent observations of the negative differential conductance (NDC) phenomenon in graphene field-effect transistors (FET) open up new opportunities for their application in graphene-based fast switches, frequency multipliers and, most importantly, in high frequency oscillators up to the terahertz regime. Unlike conventional two-terminal NDC devices that rely on resonant tunneling and inter-valley transferring, in the present work, it has been shown that the universal NDC phenomenon of graphene-based FETs originates from their intrinsic nonlinear carrier transport under a strong electric field. The operation of graphene-NDC devices depends strongly on the interface between graphene and dielectric materials, the scattering-limited carrier mobility, and on the saturation velocity. To reveal such NDC behavior, the output characteristics of GFET are investigated rigorously, with both an analytical model and self-consistent transport equation, and with a multi-electrical parameter simulation. It is demonstrated that the contact-induced doping effect plays an important role in the operational efficiency of graphene-based NDC devices, rather than the ambipolar behavior associated with the competition between electron and hole conductances. In the absence of a NDC regime or beyond one, ambipolar transport starts at Vds > 2Vgs at the drain end, and as the dielectric layer begins to thin down, the kink-like saturation output characteristic is enhanced by the quantum capacitance contribution. These observations reveal the intrinsic mechanism of the NDC effect and open up new opportunities for the performance improvement of GFETs in future high-frequency applications, beyond the current paradigm based on two-terminal diodes.

Transfer Characteristics in Graphene Field-Effect Transistors with Co Contacts

Understanding asymmetric transfer characteristics and hysteresis behaviors in graphene devices under different chemical atmospheres

Transfer characteristics and contact resistance in Ni- and Ti-contacted graphene-based field-effect transistors

Charge-density depinning at metal contacts of graphene field-effect transistors

The role of contacts in graphene transistors: A scanning photocurrent study

Contact Length Scaling in Graphene Field-Effect Transistors

Nonlinear Current-Voltage Characteristics and Enhanced Negative Differential Conductance in Graphene Field Effect Transistors.

Effect of back-gate on contact resistance and on channel conductance in graphene-based field-effect transistors

Conductance fluctuations in graphene devices with superconducting contacts in different charge density regimes

Influence of Metal–Graphene Contact on the Operation and Scalability of Graphene Field-Effect Transistors

Carrier Sheet Density Constrained Anomalous Current Saturation of Graphene Field Effect Transistors: Kinks and Negative Differential Resistances.

Graphene field effect transistors with niobium contacts and asymmetric transfer characteristics

Unexpected Electron Transport Suppression in a Heterostructures Graphene MoS2 Multiple Field-Effect Transistor Architecture

Understanding the contact characteristics in single or multi-layer graphene devices: The impact of defects (carbon vacancies) and the asymmetric transportation behavior

&Lt;inline-Formula> &Lt;tex-Math Notation="tex">${\rm MoS}_{2}$ &Lt;/tex-Math></inline-formula> Field-Effect Transistors with Graphene/Metal Heterocontacts

Modulation of Negative Differential Resistance in Graphene Field-Effect Transistors by Tuning the Contact Resistances

Back-Gate Graphene Field-Effect Transistors with Double Conductance Minima

Three-Dimensional Micro-Channel Structure of Graphene Field-Effect Transistor

Research on the Characteristics of Graphene-metal Contact

Quantum behavior of graphene transistors near the scaling limit.

Contact resistance extraction of graphene FET technologies based on individual device characterization