Scanning Gate Microscopy of a Nanostructure where Electrons Interact

Axel Freyn,Ioannis Kleftogiannis,Jean-Louis Pichard

DOI: https://doi.org/10.1103/PhysRevLett.100.226802

2008-10-08

Abstract:We show that scanning gate microscopy can be used for probing electron-electron interactions inside a nanostructure. We assume a simple model made of two non-interacting strips attached to an interacting nanosystem. In one of the strips, the electrostatic potential can be locally varied by a charged tip. This change induces corrections upon the nanosystem Hartree-Fock self-energies which enhance the fringes spaced by half the Fermi wavelength in the images giving the quantum conductance as a function of the tip position.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to detect electron - electron interactions in nanostructures by Scanning Gate Microscopy (SGM). Specifically, the authors propose a method to observe and measure the strength \(U\) of electron - electron interactions inside nanostructures using SGM technology. They assume a simple model, which consists of two non - interacting strips connected to an interacting nanosystem. The electrostatic potential in one of the strips can be locally changed by a charged probe, and this change will modify the Hartree - Fock self - energy of the nanosystem, thereby enhancing the interference fringes spaced at half of the Fermi wavelength in the image.

### Core problems of the paper:
1. **How to use SGM to detect electron - electron interactions in nanostructures?**
- The authors detect electron - electron interactions by moving a charged probe near the nanostructure and measuring the change in quantum conductance with the probe position. These measurement results can show interference fringes, and their attenuation characteristics can be used to infer the existence and strength of the interactions.

2. **How to extract information about electron - electron interactions from SGM images?**
- The authors find that when there are electron - electron interactions, the amplitude of the interference fringes will be enhanced and will decay as \(1/r^2\) when close to the nanostructure and as \(1/r\) when far from the nanostructure. In addition, a phase shift of the interference fringes is also observed.

3. **How to explain these experimental phenomena through theoretical models?**
- The authors use the Hartree - Fock approximation to describe the self - energy correction of the nanosystem. They calculate the Hartree and Fock self - energies by solving integral equations, and these self - energies correct the transport properties of the nanosystem. The comparison between the theoretical model and the experimental results verifies the influence of electron - electron interactions.

### Key formulas:
- **Hartree self - energy**:
\[
\Sigma_H^0 = -\frac{U}{\pi} \Im \int_{-\infty}^{E_F} (G_{\text{nano}}(E))_{1,1} \, dE
\]
\[
\Sigma_H^1 = -\frac{U}{\pi} \Im \int_{-\infty}^{E_F} (G_{\text{nano}}(E))_{0,0} \, dE
\]

- **Fock self - energy**:
\[
\Sigma_F = \frac{U}{\pi} \Im \int_{-\infty}^{E_F} (G_{\text{nano}}(E))_{0,1} \, dE
\]

- **Attenuation function of interference fringes**:
\[
F(r_T) = \frac{a_1 \cos(2k_F r_T + \delta_1)}{r_T} + \frac{a_2 \cos(2k_F r_T + \delta_2)}{r_T^2}
\]

### Summary:
This paper, through a combination of experimental and theoretical methods, shows how to use Scanning Gate Microscopy (SGM) to detect electron - electron interactions in nanostructures. By analyzing the attenuation characteristics and phase shift of interference fringes, the interaction strength \(U\) can be effectively measured. This method provides new tools and techniques for studying many - body effects at the nanoscale.