S. Maji,K. Sowa,M. P. Nowak
Abstract:We theoretically study scanning gate microscopy (SGM) of electron and hole trajectories in a quantum point contact (QPC) embedded in a normal-superconductor (NS) junction. At zero voltage bias, the electrons and holes transported through the QPC form angular lobes and are subject to self-interference, which marks the SGM conductance maps with interference fringes analogously as in normal systems. We predict that for an NS junction at non-zero bias a beating pattern is to occur in the conductance probed with the use of the SGM technique owing to a mismatch of the Fermi wavevectors of electrons and holes. Moreover, the SGM technique exposes a pronounced disturbance in the angular conductance pattern, as the retroreflected hole does not retrace the electron path due to wavevector difference.
What problem does this paper attempt to address?
The problems that this paper attempts to solve are: **To study the transmission paths of electrons and holes in the quantum point contact (QPC) embedded in the normal - superconductor (NS) junction and their self - interference phenomena through the scanning gate microscope (SGM) technique**. Specifically, the paper focuses on the following points:
1. **Electron and hole transmission at zero bias voltage**:
- At zero voltage bias, the electrons and holes transmitted through the QPC form angular lobes, and due to the self - interference effect, interference fringes are marked on the SGM conductance map, similar to the situation in normal systems.
2. **Transmission characteristics at non - zero bias voltage**:
- For NS junctions with non - zero bias voltages, due to the mismatch of the Fermi wave vectors of electrons and holes, a beating pattern is predicted to appear, which will affect the conductance change detected by SGM.
- Due to the wave vector difference, the back - reflected holes will not retrace the electron paths, resulting in a significant perturbation in the angular conductance pattern.
3. **The influence of Andreev reflection**:
- The influence of Andreev reflection on the electron and hole paths has been studied. In particular, at non - zero bias voltages, due to the self - interference conductance oscillation caused by different wave vectors showing a beating phenomenon, the Andreev - reflected holes will not retrace the electron paths, thus producing an obvious resonance pattern in the conductance detected by SGM.
4. **Visualization of spatially resolved electron and hole paths**:
- It is proposed to use the SGM technique to visualize the paths of electrons and holes in the QPC, revealing their self - interference phenomena and the spatial distribution of transmission characteristics.
### Formula summary
The formulas involved in the paper include:
- Hamiltonian:
\[
H=\left(\frac{\hbar^{2}k^{2}}{2m^{*}}+V_{\text{QPC}}(x, y)+V_{\text{SGM}}(x, y, x_{\text{tip}}, y_{\text{tip}})-\mu\right)\tau_{z}+\Delta(x)\tau_{x}
\]
where \(\tau_{x}\) and \(\tau_{z}\) are Pauli matrices, and \(\mu\) is the chemical potential.
- SGM potential:
\[
V_{\text{SGM}}(x, y)=\frac{V_{\text{tip}}}{1+\frac{(x - x_{\text{tip}})^{2}+(y - y_{\text{tip}})^{2}}{d_{\text{sgm}}^{2}}}
\]
- Zero - temperature conductance calculation formula (Landauer - Buttiker formula):
\[
G(E)=\frac{2e^{2}}{h}\cdot(N(E)-R_{ee}(E)+R_{he}(E))
\]
where \(N\) is the number of electron modes in the normal lead, \(R_{ee}(E)\) is the electron - to - electron reflection coefficient, and \(R_{he}(E)\) is the electron - to - hole reflection coefficient.
These formulas and theoretical analyses jointly support the research objective of the paper, that is, to reveal the complex electron and hole transmission behaviors in NS junctions through the SGM technique.