Imaging the Conductance of Integer and Fractional Quantum Hall Edge States

Nikola Pascher,Clemens Rössler,Thomas Ihn,Klaus Ensslin,Christian Reichl,Werner Wegscheider

DOI: https://doi.org/10.1103/PhysRevX.4.011014

2013-09-19

Abstract:We measure the conductance of a quantum point contact (QPC) while the biased tip of a scanning probe microscope induces a depleted region in the electron gas underneath. At finite magnetic field we find plateaus in the real-space maps of the conductance as a function of tip position at integer (\nu=1,2,3,4,6,8) and fractional (\nu=1/3,2/3,5/3,4/5) values of transmission. They resemble theoretically predicted compressible and incompressible stripes of quantum Hall edge states. The scanning tip allows us to shift the constriction limiting the conductance in real space over distances of many microns. The resulting stripes of integer and fractional filling factors are rugged on the micron scale, i.e. on a scale much smaller than the zero-field elastic mean free path of the electrons. Our experiments demonstrate that microscopic inhomogeneities are relevant even in high-quality samples and lead to locally strongly fluctuating widths of incompressible regions even down to their complete suppression for certain tip positions. The macroscopic quantization of the Hall resistance measured experimentally in a non-local contact configuration survives in the presence of these inhomogeneities, and the relevant local energy scale for the \nu=2 state turns out to be independent of tip position.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to image the edge - state conductance of the integer quantum Hall effect and the fractional quantum Hall effect in real space by means of Scanning Gate Microscopy (SGM). Specifically, the author hopes to explore the following aspects:

1. **Edge - state behavior in Quantum Point Contact (QPC)**:
- Study the conductance change of QPC at different positions, especially when the biased tip of the Scanning Probe Microscope (SPM) induces a depletion region below the electron gas.
- It is observed that under a finite magnetic field, as the tip position changes, steps corresponding to integer (ν = 1, 2, 3, 4, 6, 8) and fractional (ν = 1/3, 2/3, 5/3, 4/5) filling factors appear in the conductance map.

2. **The influence of microscopic inhomogeneities on the quantum Hall effect**:
- Explore how microscopic inhomogeneities affect the quantum Hall effect in high - mobility samples, especially whether these inhomogeneities will lead to strong local fluctuations in the width of the incompressible region or even completely suppress the incompressible region at certain tip positions.
- Experiments prove that in the presence of these inhomogeneities, the macroscopically quantized Hall resistance can still be measured in a non - local contact configuration.

3. **Edge - state structures of the integer and fractional quantum Hall effects**:
- Through SGM experiments, study the formation mechanism of edge - states in the integer and fractional quantum Hall effects, especially the edge - state reconstruction phenomenon under the influence of the tip.
- Unprecedented rich local structures are discovered and are interpreted as the interaction between the interaction - driven formation of local correlated states and the small residual potential fluctuations present in the sample.

4. **Position independence of the energy gap**:
- Verify that for a specific integer filling factor (such as ν = 2), its corresponding energy gap is position - independent at different tip positions, which indicates that although the edge structure is irregular, the energy gap remains consistent.

Through the exploration of these problems, the author aims to gain a deeper understanding of the behavior of edge - states in the quantum Hall effect and their influence on conductance, and to provide experimental evidence for theoretical models.

### Formula summary

- **Conductance formula for the integer quantum Hall effect**:
\[
G=\frac{e^{2}}{h}\times\nu
\]
where \( \nu \) is the integer filling factor, representing the number of occupied Landau energy levels.

- **Conductance formula for the fractional quantum Hall effect**:
\[
G=\frac{e^{2}}{h}\times\nu
\]
where \( \nu \) is the fractional filling factor.

- **Total potential formula**:
\[
V_{\text{tot}} = -\frac{1}{2}m^{*}\omega_{x}^{2}x+\frac{1}{2}m^{*}\omega_{y}^{2}y+\frac{V_{0}\gamma^{2}}{\gamma^{2}+(x - x_{0})^{2}+(y - y_{0})^{2}}
\]
where \( \omega_{x} \) and \( \omega_{y} \) describe the curvature of the saddle - point potential in the \( x \) and \( y \) directions, \( V_{0} \) describes the height of the Lorentz potential, and \( \gamma \) represents the full - width at half - maximum of the tip - induced potential.

These formulas help to explain the phenomena observed in the experiments and provide a basis for theoretical analysis.