Abstract:Positive signs of the effective g-factors for free electrons in the conduction band and electrons localized on deep paramagnetic centers have been measured in nitrogen dilute alloy GaAs{0.979}N{0.021} at room temperature. The g-factor signs have been determined from an asymmetry in the depolarization of edge photoluminescence in a transverse magnetic field (Hanle effect) at the oblique incidence of the exciting radiation and oblique-angle detection of the luminescence. The tilted spin polarization of free electrons is induced under interband absorption of circularly polarized light, and the paramagnetic centers acquire spin polarization because of spin-dependent capture of free spin-polarized electrons by these centers. The measured Hanle curve is a superposition of two lines, narrow and broad, with the widths ~400 G and ~50000 G, arising due to the depolarization of localized and free electrons, respectively. The magnitude and direction of the asymmetry in the measured Hanle curve have been found to depend on the partial contributions to the photoluminecsence from the heavy- and light-hole subbands split by a uniaxial deformation of the GaAs{1-x}N{x} film grown on a GaAs substrate. We have extended the theory of optical orientation in order to calculate the excitation spectrum of the photoelectron tilted-spin polarization and the circularly-polarized luminescence spectrum taking into account that, in the strained samples under study, the light-hole subband lies above the heavy-hole one. The results have further been used to calculate the shape of Hanle curve as a function of the excitation and registration energies as well as the incidence and detection angles and to compare the theory with experiment.

Helicity asymmetry of optically-pumped NMR spectra in GaAs

High Magnetic Field Studies Of Charged Exciton Localization In Gaas/Alxga1-Xas Quantum Wells

Optical orientation of nuclei in nitrogen alloys GaAsN at room temperature

Origin of enhanced dynamic nuclear polarization and all-optical nuclear magnetic resonance in GaAs quantum wells

NMR Determination of 2D Electron Spin Polarization at $ν=1/2$

Electron Spin Coherence and Effect of Spin Polarization on Electron Relaxation Dynamics in Gaas

Completion of Katz-Qin-Ruan's Enumeration of Genus-Two Plane Curves

NMR Study of Large Skyrmions in Al_{0.13}Ga_{0.87}As Quantum Wells

Polarity-driven 3-Fold Symmetry of GaAs/AlGaAs Core Multishell Nanowires.

The sign of electron g-factor in GaAs(1-x)N(x) measured by using the Hanle effect

Optically induced nuclear spin polarization in a single GaAs/AlGaAs quantum well probed by a resistance detection method in the fractional quantum Hall regime

Experimental Study on Helium Optical Electron Polarimetry

Linear polarization in the emission spectra of multiexciton states in InAs/GaAs self-assembled quantum dots

Polarization Spectroscopy of High-Order Harmonic Generation in Gallium Arsenide

Raman Coherence Beats from Entangled Polarization Eigenstates in InAs Quantum Dots

Photoluminescence of double quantum wells: asymmetry and excitation laser wavelength effects

Chiral Photodetector Based on GaAsN

Nonlinear helicity anomalies in the cyclotron resonance photoresistance of two-dimensional electron systems

Optical manipulation of linear magnetogyrotropic photogalvanic effect in a GaAs/Al0.3Ga0.7As heterostructure

Intrinsic Optical Anisotropy Of [001]-Grown Short-Period Inas/Gasb Superlattices

Raman scattering probe of anharmonic effects due to temperature and compositional disorder in GaNxAs1−x