UV- and NIR-blocking properties of ZnO/ATO bilayer films prepared by RF magnetron sputtering

Jing Shao,Honglie Shen,Kai Gao,Xiaomin Huo,Jaffer Saddique,Xuewen Wang,Weili Meng

DOI: https://doi.org/10.1016/j.optmat.2021.111287

IF: 3.754

2021-08-01

Optical Materials

Abstract:<p>Films with ultraviolet (UV) and near-infrared (NIR) blocking properties can be used to protect against UV and heat radiation, thus prolonging the operating life of photovoltaic devices. Being wide band-gap semiconductors, ZnO films can absorb UV light and antimony doped tin oxide (ATO) films can play the role of defending against the NIR light with low electrical resistivities. In this work, the bilayer films of ZnO overlayed by ATO are sputtered by radio-frequent (r.f.) magnetron sputtering, and the growth rules of ATO on ZnO film are studied comprehensively by adjusting parameters including the sputtering power, pressure, gas flow rate ratio of O₂/Ar and sputtering time. Eventually, a bilayer film with 200 nm thick ZnO layer and 400 nm thick ATO layer is fabricated and shows about 96% UV-blocking (from 280 nm to 380 nm), about 66% NIR-blocking (from 1100 nm to 2500 nm) while maintains about 80% light transmittance (from 380 nm to 1100 nm) after annealing in the nitrogen atmosphere at 500 °C for 1 h. This transparent bilayer film with UV and NIR double blocking functions can be potentially used in organic solar cells.</p>

materials science, multidisciplinary,optics