RF magnetron sputtering of Zn2SnO4 thin films: optimising microstructure, optical and electrical properties for photovoltaics

Nirmal T. Shajan,D. Bharathi Mohan
DOI: https://doi.org/10.1007/s10854-024-12648-8
2024-05-01
Journal of Materials Science Materials in Electronics
Abstract:Zn 2 SnO 4 (ZTO) is a potential n-type material that can be used as a buffer layer in thin-film solar cells. In this work, ZTO thin films were deposited on silicon (100) and quartz (Y-cut) substrates using RF magnetron sputtering from a ceramic target prepared by the mixture of Tin Oxide (SnO 2 ) and Zinc Oxide (ZnO) in a 2:1 ratio. The effects of RF power, deposition time and post-deposition annealing temperature on the structural, optical, morphological, and electrical properties of the as-grown films were studied with various techniques. The phase formation of crystalline inverse spinel cubic ZTO thin film has been verified by characterising through X-ray diffraction and Raman spectrometer. X-ray photoelectron spectroscopy was used to confirm the oxidation state of the films. Optical analysis carried out by a UV–visible spectrophotometer exhibits that the film has a high transmittance value of 80–85% in the visible range. The optical band gap of the films was calculated and compared. Surface characteristics such as particle size, shape, and roughness have been investigated using atomic force microscopy, and the film's surface shows a uniformly smooth nature. Energy dispersive X-ray analysis further confirms the presence of Zinc (Zn), Tin (Sn) and Oxygen (O) elements in the deposited films. The electrical properties of the optimised ZTO films were analysed through hall measurements, unveiling the n-type conductivity of the films with elevated carrier concentration and mobility, underscoring their suitability for application in thin-film solar cells.
materials science, multidisciplinary,engineering, electrical & electronic,physics, applied, condensed matter
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