Fabrication and Characterization of Amorphous Nb-Zn-Sn-O Thin Films

YAN Wei-chao,SUN Ru-jie,CHEN Ling-xiang,LV Jian-guo,YE Zhi-zhen
DOI: https://doi.org/10.14136/j.cnki.issn 1673-2812.2015.06.008
2015-01-01
Abstract:Amorphous Nb-Zn-Sn-O(NZTO)films which can be applied in thin film transistor as the channel layer were fabricated successfully using rf-magnetron sputtering deposition.The effects of working pressure and annealing on the structural,electrical and optical properties of the as-grown NZTO thin films were investigated.When the films were grown at 120 Wand working pressure of 0.6Pa and annealed subsequently at400℃ for 2h,the mobility can be 5.5cm2v-1 s-1,the carrier concentration is below 1017 and the optical transmittance is all above 80%.The as-grown NZTO films can act as the channel layer in TFT devices.
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