Abstract:The structural parameters, electron localization functions, electron paramagnetic resonance (EPR) parameters, formation energies, and thermodynamic transition levels of various oxygen vacancy defects in amorphous silica are comprehensively and integrally investigated by using density functional theory. The trends of changes in the oxygen vacancy defect structure and electron localization induced by the increase in distance between defective silicon atoms are clearly identified. It is shown that the dimer configuration may be the potential structure of the Eδ' center. For the back-projected unpuckered configuration and the puckered configuration, whose EPR parameters are more consistent with the experimental values of the Eγ' center, the unpaired electron localized on the sp3 hybridized silicon atom is a common feature. Due to the three-coordinated oxygen atom in the forward-oriented configuration, the EPR parameters are closest to those of the Eα' center. Transformations of oxygen vacancy defects under different charge states are studied by sequentially adding and removing electrons. The thermodynamic transition level analysis reveals that the dimer and forward configurations may behave as deep traps for electron accumulation. The back-projected puckered fourfold-coordinated and fivefold-coordinated configurations are comparatively stable and may be able to function as shallow traps for electron transport. The neutral double unpuckered, neutral back-projected puckered fourfold-coordinated, and neutral back-projected unpuckered configurations are more likely to lose electrons during hole trapping. As the bias voltage is repeatedly changed, the defect density of the puckered configuration may reduce, while that of the dimer and unpuckered configuration may take an opposite trend.

Experimental investigation on the microscopic structure of intrinsic paramagnetic point defects in amorphous silicon dioxide

Scanning Infrared Microscopy Study of Thermal Processing Induced Defects in Low Resistivity Si Wafers

Identification of paramagnetic centers in irradiated Sn-doped silicon dioxide by first-principles

Evolution of secondary defects in arsenic implanted Si

First principles study of oxygen vacancy defects in amorphous SiO2

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Transmission Electron Microscopy Investigation of the Micro-Defects in Czochralski Silicon

Annealing-Induced Changes in the Nature of Point Defects in Sublimation-Grown Cubic Silicon Carbide

Hole Capture-Structural Relaxation Mechanism of Defect Generation in Ionizing-irradiated $a$-SiO$_2$

Role of hydrogen on the generation and decay of point defects in amorphous silica exposed to UV laser radiation

Investigations on ion irradiation induced strain and structural modifications in 3C–SiC

Deep Levels and Electron Paramagnetic Resonance Parameters of Substitutional Nitrogen in Silicon from First Principles

Gamma Ray Irradiated Silicon Nanowires: an Effective Model to Investigate Defects at the Interface of Si/Siox

First-principles investigation of positively charged and neutral oxygen vacancies in amorphous silica

Direct simulation of ion beam induced stressing and amorphization of silicon

Evolution Of Defects And Defect Clusters In Beta-Sic Irradiated At High Temperature

Gamma-Rays Irradiation - an Effective Method for Improving Light-Emission Stability of Porous Silicon

Energetics of intrinsic point defects in ZrSiO$_4$

A Study of Electron Irradiation-Induced Defects in Si Layers

Analysis of the electronic structure of β-SiO2 intrinsic defects based on Density Functional Theory

Study of point defect detectors in Si