Abstract:Synthetic vitreous silica is currently the preferred material for the production of optical fibres because of the several excellent properties of this glass, e.g. high transmission in the visible and IR domains, high mechanical strength, chemical durability, and ease of doping with various materials. For instance, fiber lasers and amplifiers exploit the light amplification properties provided by rare-earth ions employed as dopants in the core of silica-based optical fibers. The structure and composition of the nearest neighbor shell surrounding rare-earth ions in silica-based optical fibers and amplifiers have been intensively debated in the last decade. To reduce aggregation effects between rare-earth ions, co-dopants such as phosphorus and aluminium are added as structural modifiers; phosphorus-doping, in particular, has proved to be very efficient in dissolving rare-earth ions. In this work, we provide further insights concerning the embedding of P atoms into the silica network, which may be relevant for explaining the ease of formation of a phosphorus pentoxide nearest-neighbor shell around a rare-earth dopant. In particular, by means of first-principles calculations, we discuss alternative models for an irradiation (UV, x-, γ-rays) induced paramagnetic center, i.e. the so called room-temperature phosphorus-oxygen-hole center, and its precursors. We report that the most likely precursor of a room-temperature phosphorus-oxygen-hole center comprises of a micro-cluster of a few (at least two) neighboring phosphate tetrahedra, and correspondingly that the occurrence of isolated [(O-)2P(=O)2]- units is unlikely even at low P-doping concentrations. In fact, this work predicts that the symmetric stretching of P=O bonds in isolated [(O-)2P(=O)2]- units appears as a Raman band at a frequency of ~1110 cm-1, and only by including at least another corner-sharing phosphate tetrahedron, it is shown to shift to higher frequencies (up to ~40 cm-1) due to the shortening of P=O bonds, thereby leading to an improved agreement with the observed Raman band located at ~1145 cm-1.

Identification of paramagnetic centers in irradiated Sn-doped silicon dioxide by first-principles

First-Principles Investigation Of Paramagnetic Centers In P2o5 Based Glasses

First-Principles Investigation of Paramagnetic Centers in P2 O5 Based Glasses

Use of optically detected magnetic resonance to correlate germanium electron centers with UV absorption bands in X-ray irradiated germanosilicate glasses

An EPR investigation on reduced Sn centres in SrSnO 3 perovskite

Experimental investigation on the microscopic structure of intrinsic paramagnetic point defects in amorphous silicon dioxide

N-VSi-related center in non-irradiated 6H SiC nanostructure

Identification of silicon vacancy-related electron paramagnetic resonance centers in 4H SiC

Centers of near-IR luminescence in Bi-doped SiO2 and GeO2: First-principle modeling and experimental data analysis

Paramagnetic Intrinsic Point Defects in Alkali Phosphate Glasses: Unraveling the P3 Center Origin and Local Environment Effects

Deep Levels and Electron Paramagnetic Resonance Parameters of Substitutional Nitrogen in Silicon from First Principles

EPR, optical absorption and superposition model study of Fe³(+) doped strontium nitrate single crystals

First-principle study of the near-IR luminescence centers in Bi2O3-GeO2 andBi2O3-SiO2 glasses

E' paramagnetic centers in nanoporous synthetic opals - a probe for near surface protons

Investigation of energy transfer mechanisms in rare-earth doped amorphous silica films embedded with tin oxide nanocrystals.

Single-photon-emitting optical centers in diamond fabricated upon Sn implantation

Electron Paramagnetic Resonance Observation of Trigonally Symmetric Si Dangling Bonds in Porous Silicon Layers: Evidence for Crystalline Si Phase

Prediction of the Optical Polarization and High Field Hyperfine Structure Via a Parametrized Crystal-Field Model for the Low Symmetry Centers in Er$^{3+}$ Doped Y$_{2}$SiO$_{5}$

First-principles investigation of positively charged and neutral oxygen vacancies in amorphous silica

v-P2O5 micro-clustering in P-doped silica studied by a first-principles Raman investigation

Electronic Structure Using Powder XRD and Its Correlation with the Origin of Room-Temperature Magnetism in Cr3+ Doped SnO2