An EPR investigation on reduced Sn centres in SrSnO 3 perovskite

Adervando Silva,Franciska Hurdley,Andre Luiz Menezes de Oliveira,Thomas Slater,Ary da Silva Maia,Andrea Folli,Ieda Maria Garcia dos Santos
DOI: https://doi.org/10.1016/j.matlet.2024.136705
IF: 3
2024-05-25
Materials Letters
Abstract:The use of the wide band gap SrSnO 3 semiconductor in photocatalysis has grown over the last few years, driven predominantly by sustainability given that its constituents are all Earth abundant elements. Using EPR spectroscopy, we elucidate the paramagnetic species present in the material, either intrinsic or photo-generated. EPR measurements confirmed the presence of paramagnetic oxygen vacancies (g = 2.0058) and a defect sensitive to visible light irradiation despite a wide optical band gap of 4.1 eV. This defect was confirmed to be Sn 3+ (g = 2.014 and g = 1.994). Its concentration appears to increase with visible light irradiation, suggesting a photo-induced formation associated with electronic transitions from Sn 2+ intra-band gap states to the conduction band.
materials science, multidisciplinary,physics, applied
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