Abstract:We have experimentally and theoretically investigated the spin injection/detection polarization in a Si-based ferromagnetic tunnel junction with an amorphous MgO layer, and demonstrated that the experimental features of the spin polarization in a wide bias range can be well explained using our theoretical model based on the band diagram of the junction and the direct tunneling mechanism. It is shown that the spin polarization originates from the band diagrams of the ferromagnetic Fe layer and n+-Si channel in the junction, while the spin selectivity of the MgO tunnel barrier is not necessary. Besides, we clarified the mechanism of the reduction in spin polarization when the bias is high and nonlinear properties are prominent, where the widely-used spin injection/detection model proposed by Valet and Fert is not applicable. The dominant mechanism of such reduction is found to be spin accumulation saturation (SAS) at the n+-Si interface in contact with the MgO layer as the bias is increased in the spin extraction geometry, which is inevitable in semiconductor-based ferromagnetic tunnel junctions. We performed numerical calculations on a two-terminal spin transport device with a n+-Si channel using the junction properties extracted from the experiments, and revealed that the magnetoresistance (MR) ratio is suppressed mainly by SAS in a higher bias range. Furthermore, we proposed methods for improving the MR ratio in two-terminal spin transport devices. Our experiments and theoretical model provide a deep understanding of the spin injection/detection phenomena in semiconductor-based spin transport devices, toward the realization of high performance under reasonably high bias conditions for practical use.

Enhanced magneto-transport at high bias in quasi-magnetic tunnel junctions with EuS spin-filter barriers

Boosting room temperature tunnel magnetoresistance in hybrid magnetic tunnel junctions under electric bias

Enhanced Spin Injection and Voltage Bias in (zn,co)o/mgo/(zn,co)o Magnetic Tunnel Junctions

Bias Voltage and Temperature Dependence of Magneto-Electric Properties in Double-Barrier Magnetic Tunnel Junction with Amorphous Co-Fe-B Electrodes

Giant tunneling magnetoresistance induced by bias voltage in spin-filter van der Waals magnetic tunnel junctions with an interlayer antiferromagnetic semiconductor barrier

Nonequilibrium Spin Accumulation and Tunneling Magnetoresistance in a Ferromagnet/semiconductor/ferromagnet Double Tunnel Junction

Oscillatory Tunnel Magnetoresistance in Double Barrier Magnetic Tunnel Junctions

First-principles Study of Bias Effect on Magnetoresistance of Fe/MgO/Fe Tunnel Junctions

Magnetization Reversal Mechanism of Magnetic Tunnel Junctions

Large tunneling magnetoresistance and its high bias stability in Weyl half-semimetal based lateral magnetic tunnel junctions

Huge Tunneling Magnetoresistance in Magnetic Tunnel Junction with Heusler Alloy Co2MnSi Electrodes

Magneto-Seebeck effect in magnetic tunnel junctions with perpendicular anisotropy

Field- and Current-Driven Magnetization Reversal and Dynamic Properties of CoFeB-MgO-Based Perpendicular Magnetic Tunnel Junctions*

Quantum Transport in Normal-Metal/ferromagnet/spin-triplet Superconductor Junctions

Theoretical study on magnetic tunneling junctions with semiconductor barriers CuInSe$_2$ and CuGaSe$_2$ including a detailed analysis of band-resolved transmittances

Reduction of spin polarization by incoherent tunneling in Co2FeAl/MgO/CoFe magnetic tunnel junctions with thick MgO barriers

Temperature and bias voltage dependences of magnetic tunnel junction with FeAlSi electrode

Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions

Tunneling magnetoresistance based on a Cr/graphene/Cr magnetotunnel junction*

Magnetoresistance Effect of Double-Barrier Magnetic Tunneling Junction Applied in Spin Transistors

Spin injection and detection in a Si-based ferromagnetic tunnel junction: A theoretical model based on the band diagram and experimental demonstration