Abstract:Magnetic tunnel junctions (MTJs) with ferromagnetic (FM) and/or antiferromagnetic (AFM) materials have attracted wide interest for their promising application in spintronic devices. Recently, many discovered two-dimensional (2D) magnetic materials offer a flexible platform to design switchable layered FM/AFM MTJs. By using the first-principles quantum transport simulations, we designed the MTJs based on 2D van der Waals layered MnBi _2 Te _4 and studied the spin-dependent electronic and transport properties of the MTJs with the different thickness MnBi _2 Te _4 as well as their FM and AFM configurations. As the increment of MnBi _2 Te _4 layers, our results show that there is a higher spin polarization and the tunnel magnetoresistance (TMR) ratio at the Fermi level correspondingly increases: 100 _2 Te _4 -based MTJs. For Moore’s Law to continue to work, there is an urgent demand to find new principles, new materials, and more concepts for future devices. Among them, spintronics has exhibited great potential due to its excellent performance. A typical widely used device is the magnetic tunnel junction (MTJ) in spintronics. Recently, more and more MTJs based on discovered two-dimensional magnetic materials have been predicted with higher tunnel magnetoresistance (TMR). As the first magnetic topological materials, MnBi2Te4 hold various magnetic states and thickness-dependent properties rather than single ferromagnetic states, and there are more possibilities to design versatile MTJ devices. Here, we construct the magnetic tunnel junctions based on MnBi2Te4 with Cu as the electrode: Cu/n-Layer-MnBi2Te4/Cu (n = 1, 2, 3, 4) device. Based on density functional theory and nonequilibrium Green’s function, we found that with the thickening of the MnBi2Te4 layers, the spin filtering of MnBi2Te4 is more apparent, where the TMR value at the Fermi level is 100 Schematic view of MnBi2Te4-based device model. The maximum tunnel magnetoresistance (TMR) ratio and the TMR ratio at the Fermi level in Cu/2(4)L-MBT/Cu magnetic tunnel junctions without and with spin–orbit coupling.

Theoretical study on magnetic tunneling junctions with semiconductor barriers CuInSe$_2$ and CuGaSe$_2$ including a detailed analysis of band-resolved transmittances

Magnetism of Semiconductor-Based Magnetic Tunnel Junctions under Electric Field from First Principles

Van Der Waals Antiferroelectric Magnetic Tunnel Junction: A First-Principles Study of a CrSe2/CuInP2S6/CrSe2 Junction.

Investigation on the Quantum Coherent Transport in Magnetic Tunnel Junctions

Quantum Oscillations of Tunneling Magnetoresistance in Magnetic Tunnel Junctions

Spin Transport Properties of MnBi2Te4-Based Magnetic Tunnel Junctions

Design Guidelines of Magnetic Tunnel Junctions with Two-dimensional Tunneling Barrier Layer: Atomistic Simulation Study from Material to Device

Impurity-limited Quantum Transport Variability in Magnetic Tunnel Junctions

Spin-Dependent Tunneling Spectroscopy in Mgo-Based Double-Barrier Magnetic Tunnel Junctions

Theory for Tunnel Magnetoresistance Oscillation

Magnetic tunneling junctions based on 2D CrI3 and CrBr3: spin-filtering effects and high tunnel magnetoresistance via energy band difference

Magnetic molecule tunnel heterojunctions

Spin-dependent Tunneling in 2D MnBi 2 Te 4 -Based Magnetic Tunnel Junctions

Giant Tunnel Magnetoresistance in In-Plane Magnetic Tunnel Junctions Based on the Heterointerface-Induced Half-Metallic 2H-VS2

Huge Tunneling Magnetoresistance in Magnetic Tunnel Junction with Heusler Alloy Co2MnSi Electrodes

Anomalous tunnel magnetoresistance and spin transfer torque in magnetic tunnel junctions with embedded nanoparticles

Co/AlP/Co, Co/GaN/Co as magnetic tunnel junctions

Magnetic coherent tunnel junctions with periodic grating barrier

Coherent Tunneling and Strain Sensitivity of an All Heusler Alloy Magnetic Tunneling Junction: A First-Principles Study

Impact of current paths on measurement of tunneling magnetoresistance and spin torque critical current densities in GaMnAs-based magnetic tunnel junctions

Large tunneling magnetoresistance and perfect spin filtering effect in van der Waals Cu/FeX2/h-BN/FeX2/Cu (X = Cl, Br, I) magnetic tunnel junctions