Coherent Tunneling and Strain Sensitivity of an All Heusler Alloy Magnetic Tunneling Junction: A First-Principles Study

Joydipto Bhattacharya,Ashima Rawat,Ranjit Pati,Aparna Chakrabarti,Ravindra Pandey

2023-09-18

Abstract:Half-metallic Co-based full Heusler alloys have captured considerable attention of the researchers in the realm of spintronic applications, owing to their remarkable characteristics such as exceptionally high spin polarization at Fermi level, ultra-low Gilbert damping, and high Curie temperature. In this comprehensive study, employing density functional theory, we delve into the stability and electron transport properties of a magnetic tunneling junction (MTJ) comprising a Co$_2$MnSb/HfIrSb interface. Utilizing a standard model given by Julliere, we estimate the tunnel magnetoresistance (TMR) ratio of this heterojunction under external electric field, revealing a significantly high TMR ratio (500%) that remains almost unaltered for electric field magnitudes up to 0.5 V/A. In-depth investigation of K-dependent majority spin transmissions uncovers the occurrence of coherent tunneling for the Mn-Mn/Ir interface, particularly when a spacer layer beyond a certain thickness is employed. Additionally, we explore the impact of bi-axial strain on the MTJ by varying the in-plane lattice constants between -4% and +4%. Our spin-dependent transmission calculations demonstrate that the Mn-Mn/Ir interface manifests strain-sensitive transmission properties under both compressive and tensile strain, and yields a remarkable three-fold increase in majority spin transmission under tensile strain conditions. These compelling outcomes place the Co2MnSb/HfIrSb junction among the highly promising candidates for nanoscale spintronic devices, emphasizing the potential significance of the system in the advancement of the field.

Applied Physics,Materials Science

What problem does this paper attempt to address?

### What problems does this paper attempt to solve?

This paper aims to study the coherent tunneling and strain sensitivity of the magnetic tunnel junctions (MTJ) of full - Heusler alloys. Specifically, the authors explored the stability of the Co₂MnSb/HfIrSb interface and its electron transport properties through first - principles calculations, and evaluated its application potential in spintronic devices. The following are the main problems solved in the paper:

1. **Achievement of high TMR ratio**:
- Researchers used the Julliere model to estimate the tunnel magnetoresistance (TMR) ratio of this heterojunction under an applied electric field. The results showed that when the electric field strength reached 0.5 V/Å, the TMR ratio remained at about 500% and hardly changed with the electric field.

2. **Coherent tunneling phenomenon**:
- The K - dependent majority - spin transport properties were thoroughly studied, revealing that the coherent tunneling phenomenon occurred at the Mn - Mn/Ir interface when a spacer layer of a certain thickness was used.

3. **Effect of strain on transport properties**:
- The influence of biaxial strain on the MTJ transport properties was explored. By changing the in - plane lattice constant (from - 4% to + 4%), it was found that the Mn - Mn/Ir interface exhibited significant strain - sensitive transport properties under both compressive and tensile strains. In particular, under tensile strain conditions, the majority - spin transport increased threefold.

4. **Material selection and optimization**:
- The material combinations suitable for spintronic devices were selected and optimized. In particular, HfIrSb, as a spacer layer material, has a relatively low direct bandgap (about 1 - 2 eV), which helps to achieve a low resistance - area (RA) product and efficient coherent tunneling.

5. **Combination of theory and experiment**:
- Combining theoretical predictions and experimental results, the preservation of the half - metallic (HM) properties in different interface geometries was explored. The research showed that the Mn - Sb and Mn - Mn (001) surfaces can better preserve the half - metallic properties.

### Formula presentation

1. **Calculation formula for spin polarization rate (SP)**:
\[
SP=\frac{n_{\uparrow}(E_F)-n_{\downarrow}(E_F)}{n_{\uparrow}(E_F)+n_{\downarrow}(E_F)}\times100\%
\]
where \(n_{\uparrow}(E_F)\) and \(n_{\downarrow}(E_F)\) represent the majority - spin and minority - spin density of states at the Fermi level, respectively.

2. **Calculation formula for TMR ratio**:
\[
TMR = \frac{G_P - G_{AP}}{G_{AP}}
\]
where
\[
G_P=\frac{e^2}{h}(n_{\uparrow}^{\text{bottom}}n_{\uparrow}^{\text{top}}+n_{\downarrow}^{\text{bottom}}n_{\downarrow}^{\text{top}})
\]
\[
G_{AP}=\frac{e^2}{h}(n_{\uparrow}^{\text{bottom}}n_{\downarrow}^{\text{top}}+n_{\downarrow}^{\text{bottom}}n_{\uparrow}^{\text{top}})
\]
\(n_{\uparrow/\downarrow}^{\text{bottom/top}}\) represents the majority/minority - spin - projected density of states of the bottom and top magnetic contacts at the Fermi level.

Through these studies, the paper provides important theoretical basis and technical support for the development of high - performance magnetic tunnel junction devices.