Abstract:Using first-principles calculations, we explore the role of an anti-ferromagnetic heavy-metal, L1$_0$-IrMn, as a capping layer in a perpendicular magnetic tunnel junction (\emph{p}-MTJ). A comparative study is conducted by employing conventional non-magnetic heavy-metals (Ta, W or Mo) capping layers along with an anti-ferromagnetic IrMn in a symmetric-MTJ X/FeCo/MgO/FeCo/X, where X=Ta, W, Mo or IrMn. Firstly, the calculations without including spin-orbit coupling (SOC) are presented where the highest TMR is achieved in IrMn-IrMn MTJ compared to that of Ta-Ta, W-W and Mo-Mo MTJs. The origin of this large TMR is attributed to, both, the large spin-polarization due to reduced lattice-mismatch and the non-identical signatures of both the anti-parallel conduction-channels caused by the anti-ferromagnetic ordering of IrMn that reflects the spins at IrMn/FeCo interface. Moreover, when SOC is switched-on, the increase of TMR is observed in all the MTJs with a particularly giant enhancement in IrMn-IrMn MTJ. This SOC-induced increase in TMR is ascribed to the mixed contribution of $\Delta_1$ and $\Delta_5$ states and the additional increase in the band levels of the out-of-plane orbitals, \emph{p}$_z$, \emph{d}$_{z}^2$ and \emph{d}$_{xz}$ due to the lifting of degeneracy. Furthermore, it was also observed that the lattice-mismatch-induced strain might create an orbital reconstruction within the capping layer, probably, due to the crystallographic deformation and, in turn, in the adjacent FeCo-electrode. This microscopic mechanism also plays an additional decisive role in enhancing the TMR. Finally, our results indicate that IrMn can offer giant TMR in future spin-orbit toque (SOT) based MRAM devices with a straightforward design strategy.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to explore the influence of spin - orbit coupling (SOC) on quantum transport in magnetic tunnel junctions (MTJ) with antiferromagnetic capping layers. Specifically, the research focuses on the following points:
1. **Optimizing the performance of magnetic tunnel junctions**: By introducing the antiferromagnetic material IrMn with strong spin - orbit coupling as a capping layer, study its influence on tunneling magnetoresistance (TMR), aiming to improve the performance of future spin - orbit torque (SOT) - based MRAM devices.
2. **Understanding the mechanism of spin - orbit coupling**: Explore the role of spin - orbit coupling in different structures, especially in the symmetric MTJ structure containing IrMn, and how it affects electron transport properties. This includes analyzing spin polarization, orbital mixing, and changes in the band structure.
3. **Comparing the influence of different capping layer materials**: Through a comparative study of different capping layer materials such as Ta, W, Mo, and IrMn, evaluate their performance in MTJ structures, especially when spin - orbit coupling is introduced, and the specific contributions of these materials to TMR.
### Specific problem description
- **Mechanism for improving TMR**: The study found that, without considering spin - orbit coupling, the IrMn - IrMn MTJ exhibits the highest TMR value. This is because the antiferromagnetic ordered arrangement of IrMn leads to a lower total antiparallel conductance, and the lattice - mismatch strain enhances spin polarization.
- **Influence of spin - orbit coupling**: After introducing spin - orbit coupling, the TMR of all MTJ structures increases, especially in the IrMn - IrMn MTJ, where the TMR is significantly enhanced. This enhancement is attributed to the degeneracy lifting and spin - orbit mixing caused by spin - orbit coupling, thereby increasing the contribution of the majority - spin channel in the parallel configuration.
- **Non - equilibrium transport properties**: Through non - equilibrium transport calculations, it is further verified that when a bias voltage is applied, the parallel current of the IrMn - IrMn MTJ improves at each finite voltage, while the antiparallel current hardly changes, indicating that IrMn has potential advantages as a capping layer material.
### Research significance
This research provides theoretical basis and technical support for designing high - performance SOT - based MRAM devices, demonstrating the great potential of IrMn as a new capping layer material. By deeply understanding the mechanism of spin - orbit coupling in MTJ, new ideas and methods can be provided for the development of future spintronics devices.
### Related formulas
- Definition of tunneling magnetoresistance (TMR):
\[
\text{TMR}=\frac{G_P - G_{AP}}{G_{AP}}
\]
where \(G_P = G_{\uparrow\uparrow}^P+G_{\downarrow\downarrow}^P\) is the conductance in the parallel configuration, and \(G_{AP}=G_{\uparrow\downarrow}^{AP}+G_{\downarrow\uparrow}^{AP}\) is the conductance in the antiparallel configuration.
- Definition of spin polarization (SP):
\[
\text{SP}=\frac{G_{\uparrow\uparrow}^P - G_{\downarrow\downarrow}^P}{G_{\uparrow\uparrow}^P+G_{\downarrow\downarrow}^P}
\]
Through these studies, the authors reveal the great potential of IrMn as a capping layer material in improving TMR and provide an important reference for further optimizing the design of SOT - based MRAM devices.