Abstract:Progress in (Ga,Mn)As lithography has recently allowed us to realize structures where unique magnetic anisotropy properties can be imposed locally in various regions of a given device. We make use of this technology to fabricate a device in which we study transport through a constriction separating two regions whose magnetization direction differs by 90 degrees. We find that the resistance of the constriction depends on the flow of the magnetic field lines in the constriction region and demonstrate that such a structure constitutes a non-volatile memory device.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: how to construct a non - volatile memory device in (Ga,Mn)As materials by using locally applied magnetic anisotropy. Specifically, through improved lithography techniques, the authors achieved control of local magnetic anisotropy in different regions of the same device. This enabled them to study the transport properties between two nanobars with different magnetization directions and demonstrated that this structure can serve as the basis for a non - volatile memory. ### Main Problems and Solutions 1. **Background and Motivation**: - (Ga,Mn)As is a typical ferromagnetic semiconductor material. Its spin - orbit coupling leads to many novel transport phenomena, which can be used for device applications. - Previous device designs usually relied on the entire device having the same magnetic properties, while the new lithography technique makes it possible to achieve different magnetic anisotropies in different parts of the same device. 2. **Research Objectives**: - Construct and study a device composed of two mutually perpendicular (Ga,Mn)As nanobars, each with strong uniaxial magnetic anisotropy. - Explore whether this structure can serve as the basis for non - volatile memory, that is, whether its resistance state depends on the relative magnetization directions of the nanobars. 3. **Experimental Methods**: - Nanobar structures were fabricated using electron - beam lithography and chemically - assisted ion - beam etching techniques. - Transport measurements were carried out at low temperatures. Different magnetization states were "written" by applying in - plane magnetic fields, and the corresponding resistance changes were measured. 4. **Key Findings**: - The resistance of the nanobars depends on the direction of magnetization relative to the direction of current, showing a significant anisotropic magnetoresistance effect (AMR). - When the magnetization directions of the two nanobars are at a 90 - degree angle, the resistance value changes significantly, indicating that this structure can be used as a non - volatile memory. - In some cases, an anomalous AMR signal was observed, that is, the resistance increased when the magnetization direction was parallel to the current, which was attributed to the tunneling effect in the depletion region. ### Conclusion By locally applying magnetic anisotropy, the researchers successfully demonstrated the potential of (Ga,Mn)As materials in constructing new - type non - volatile memories. This research not only provides new ideas for the design of ferromagnetic semiconductor devices but also reveals the differences in AMR behavior under metal and hopping transport mechanisms, which is of great significance for future device development.

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