Lithographic engineering of anisotropies in (Ga,Mn)As

S. Hümpfner,M. Sawicki,K. Pappert,J. Wenisch,K. Brunner,C. Gould,G. Schmidt,T. Dietl,L.W. Molenkamp

DOI: https://doi.org/10.1063/1.2710478

2006-12-18

Abstract:The focus of studies on ferromagnetic semiconductors is moving from material issues to device functionalities based on novel phenomena often associated with the anisotropy properties of these materials. This is driving a need for a method to locally control the anisotropy in order to allow the elaboration of devices. Here we present a method which provides patterning induced anisotropy which not only can be applied locally, but also dominates over the intrinsic material anisotropy at all temperatures.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is how to achieve local magnetic anisotropy control in ferromagnetic semiconductor (Ga,Mn)As. Specifically, the researchers hope to be able to pattern - regulate the magnetic anisotropy of the material on the nanoscale through a method, so that this regulation can not only be achieved locally, but also dominate the intrinsic anisotropy of the material in all temperature ranges (including close to the Curie temperature \(T_c\)).

### Research Background

There is a coupling between the magnetic and transport properties of ferromagnetic semiconductor (Ga,Mn)As, which has led to many anisotropy - related transport phenomena, such as strong anisotropic magnetoresistance (AMR), in - plane Hall effect, tunneling anisotropic magnetoresistance (TAMR) and Coulomb - blocked AMR. The research on these phenomena mainly depends on the intrinsic anisotropy of the material itself. However, in order to make full use of these effects and develop new device functions, a method that can locally regulate anisotropy is required, so as to integrate multiple components with different anisotropies and study their interactions.

### Main Problems

1. **Insufficient Shape Anisotropy**: Previous attempts to regulate the magnetism of (Ga,Mn)As through shape anisotropy had poor results. Shape anisotropy is effective in some temperature ranges, but is unstable or non - reproducible in other cases.
2. **Complex Intrinsic Anisotropy**: The magnetic anisotropy of (Ga,Mn)As is very complex and is affected by many factors such as growth strain and crystal symmetry, and is difficult to control precisely.
3. **Lack of Effective Local Regulation Means**: A method that can achieve local anisotropy regulation on the nanoscale is required to meet the needs of device design.

### Solution

The paper proposes a strain relaxation method based on lithography technology to introduce new magnetic anisotropy by patterning (Ga,Mn)As on the nanoscale. This method can not only achieve anisotropy regulation locally, but also dominate the intrinsic anisotropy of the material in the entire temperature range (from low temperature to close to the Curie temperature).

### Experimental Verification

The researchers prepared an array of nanoribbons by electron - beam lithography and chemically - assisted ion - beam etching (CAIBE), and carried out magnetic measurements using a superconducting quantum interference device (SQUID) magnetometer. The results show that the patterned nanoribbons exhibit single - domain behavior at low temperature, and their magnetic anisotropy is significantly different from that of the unpatterned parent layer. In addition, electrical transport measurements further confirm the stability of this lithography - induced anisotropy at different temperatures.

### Conclusion

This research successfully demonstrates how to achieve controllable regulation of local magnetic anisotropy in (Ga,Mn)As through lithography technology. This achievement provides a powerful tool for researching new spintronics effects and developing new devices based on magnetic anisotropy.