Switching the uniaxial magnetic anisotropy by ion irradiation induced compensation

Ye Yuan,Teyri Amarouche,Chi Xu,Andrew Rushforth,Roman Böttger,Kevin Edmonds,Richard Campion,Bryan Gallagher,Manfred Helm,Hans Jürgen von Bardeleben,Shengqiang Zhou
DOI: https://doi.org/10.1088/1361-6463/aab1db
2018-03-14
Abstract:In the present work, the uniaxial magnetic anisotropy of GaMnAsP is modified by helium ion irradiation. According to the micro-magnetic parameters, e.g. resonance fields and anisotropy constants deduced from ferromagnetic resonance measurements, a rotation of the magnetic easy axis from out-of-plane [0 0 1] to in-plane [1 0 0] direction is achieved. From the application point of view, our work presents a novel avenue in modifying the uniaxial magnetic anisotropy in GaMnAsP with the possibility of lateral patterning by using lithography or focused ion beam.
physics, applied
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