Polarization enhanced photoresponse of InSe via 2D ferroelectric CuCrP 2 S 6

Xiaoliang Weng,Lu Qi,Wei Tang,Muhammad Ahsan Iqbal,Chenxu Kang,Kewen Wu,Yu-Jia Zeng

DOI: https://doi.org/10.1039/d3ra05888c

IF: 4.036

2023-01-01

RSC Advances

Abstract:This investigation underscores the potential of CuCrP 2 S 6 in the development of non-volatile, multi-state optoelectronic devices.

chemistry, multidisciplinary

What problem does this paper attempt to address?

Phase Identification and Strong Second Harmonic Generation in Pure Ε-Inse and Its Alloys.

Qiaoyan Hao,Huan Yi,Huimin Su,Bin Wei,Zhuo Wang,Zhezhu Lao,Yang Chai,Zhongchang Wang,Chuanhong Jin,Junfeng Dai,Wenjing Zhang

DOI: https://doi.org/10.1021/acs.nanolett.9b00487

IF: 10.8

2019-01-01

Nano Letters

Abstract:Two-dimensional material indium selenide (InSe) has offered a new platform for fundamental research in virtue of its emerging fascinating properties. Unlike 2H-phase transition-metal dichalcogenides (TMDs), ε phase InSe with a hexagonal unit cell possesses broken inversion symmetry in all the layer numbers, and predicted to have a strong second harmonic generation (SHG) effect. In this work, we find that the as-prepared pure InSe, alloyed InSe1- xTe x and InSe1- xS x ( x = 0.1 and 0.2) are ε phase structures and exhibit excellent SHG performance from few-layer to bulk-like dimension. This high SHG efficiency is attributed to the noncentrosymmetric crystal structure of the ε-InSe system, which has been clearly verified by aberration-corrected scanning transmission electron microscopy (STEM) images. The experimental results show that the SHG intensities from multilayer pure ε-InSe and alloyed InSe0.9Te0.1 and InSe1- xS x ( x = 0.1 and 0.2) are around 1-2 orders of magnitude higher than that of the monolayer TMD systems and even superior to that of GaSe with the same thickness. The estimated nonlinear susceptibility χ(2) of ε-InSe is larger than that of ε-GaSe and monolayer TMDs. Our study provides first-hand information about the phase identification of ε-InSe and indicates an excellent candidate for nonlinear optical (NLO) applications as well as the possibility of engineering SHG response by alloying.
Origin of Versatile Polarization State in CuInP2S6

Xuanlin Zhang,Chengcheng Xiao,Zeying Zhang,Luqi Dong,Hui Pan,Chao Cao,Shengyuan A. Yang,Su-huai Wei,Yunhao Lu

DOI: https://doi.org/10.1103/physrevb.108.l161406

2023-01-01

Abstract:Exotic electric polarization-related phenomena have recently been reported in layered van der Waals material such as CuInP2S6 and its derivatives, but the physical origin for such behaviors, especially the formation of quadrupole-well ferroelectric states and the anomalous polarization switching between these states, has not been clearly understood. Here, we provide a simple theoretical explanation using group theory analysis, highlighting the role of local symmetry-determined orbital interactions between copper ions and surrounding ligands. Based on this theory, we predict a surprising effect: carrier doping, which is commonly believed to suppress electric polarization, can lead to enhanced polarization in CuInP2S6. Our first-principles simulations confirm this unusual effect and further show that an elevated hole doping level can cause electric polarization to give way to emerging ferromagnetism. Our results not only pave a way to realize ferroelectric metals, but also broaden the scope of magnetoelectric coupling mechanisms and may help enrich the potential applications of layered ferroelectric materials in the future.
Spatially Resolved Light-Induced Ferroelectric Polarization in α-In2Se3/Te Heterojunctions

Kai Zhang,Haozhe Li,Haoran Mu,Yun Li,Pu Wang,Yu Wang,Tongsheng Chen,Jian Yuan,Weiqiang Chen,Wenzhi Yu,Guangyu Zhang,Qiaoliang Bao,Shenghuang Lin

DOI: https://doi.org/10.1002/adma.202405233

2024-08-01

Abstract:Light-induced ferroelectric polarization in 2D layered ferroelectric materials holds promise in photodetectors with multilevel current and reconfigurable capabilities. However, translating this potential into practical applications for high-density optoelectronic information storage remains challenging. In this work, an α-In2Se3/Te heterojunction design that demonstrates spatially resolved, multilevel, nonvolatile photoresponsivity is presented. Using photocurrent mapping, the spatially localized light-induced poling state (LIPS) is visualized in the junction region. This localized ferroelectric polarization induced by illumination enables the heterojunction to exhibit enhanced photoresponsivity. Unlike previous reports that observe multilevel polarization enhancement in electrical resistance, the device shows nonvolatile photoresponsivity enhancement under illumination. After polarization saturation, the photocurrent increases up to 1000 times, from 10-12 to 10-9 A under the irradiation of a 520 nm laser with a power of 1.69 nW, compared to the initial state in a self-driven mode. The photodetector exhibits high detectivity of 4.6×1010 Jones, with a rise time of 27 µs and a fall time of 28 µs. Furthermore, the device's localized poling characteristics and multilevel photoresponse enable spatially multiplexed optical information storage. These results advance the understanding of LIPS in 2D ferroelectric materials, paving the way for optoelectronic information storage technologies.
Manipulating Ferroelectric Polarization and Spin Polarization of 2D CuInP2S6 Crystals for Photocatalytic CO2 Reduction

Chun-Hao Chiang,Cheng-Chieh Lin,Yin-Cheng Lin,Chih-Ying Huang,Cheng-Han Lin,Ying-Jun Chen,Ting-Rong Ko,Heng-Liang Wu,Wen-Yen Tzeng,Sheng-Zhu Ho,Yi-Chun Chen,Ching-Hwa Ho,Cheng-Jie Yang,Zih-Wei Cyue,Chung-Li Dong,Chih-Wei Luo,Chia-Chun Chen,Chun-Wei Chen

DOI: https://doi.org/10.1021/jacs.4c05798

2024-08-21

Abstract:Manipulating electronic polarizations such as ferroelectric or spin polarizations has recently emerged as an effective strategy for enhancing the efficiency of photocatalytic reactions. This study demonstrates the control of electronic polarizations modulated by ferroelectric and magnetic approaches within a two-dimensional (2D) layered crystal of copper indium thiophosphate (CuInP2S6) to boost the photocatalytic reduction of CO2. We investigate the substantial influence of ferroelectric polarization on the photocatalytic CO2 reduction efficiency, utilizing the ferroelectric-paraelectric phase transition and polarization alignment through electrical poling. Additionally, we explore enhancing the CO2 reduction efficiency by harnessing spin electrons through the synergistic introduction of sulfur vacancies and applying a magnetic field. Several advanced characterization techniques, including piezoresponse force microscopy, ultrafast pump-probe spectroscopy, in situ X-ray absorption spectroscopy, and in situ diffuse reflectance infrared Fourier transformed spectroscopy, are performed to unveil the underlying mechanism of the enhanced photocatalytic CO2 reduction. These findings pave the way for manipulating electronic polarizations regulated through ferroelectric or magnetic modulations in 2D layered materials to advance the efficiency of photocatalytic CO2 reduction.
Flexoelectric Engineering of Van Der Waals Ferroelectric CuInP2S6.

Wenjie Ming,Boyuan Huang,Sizheng Zheng,Yinxin Bai,Junling Wang,Jie Wang,Jiangyu Li

DOI: https://doi.org/10.1126/sciadv.abq1232

IF: 13.6

2022-01-01

Science Advances

Abstract:Van der Waals layered CuInP2S6 (CIPS) is an ideal candidate for developing two-dimensional microelectronic heterostructures because of its room temperature ferroelectricity, although field-driven polarization reversal of CIPS is intimately coupled with ionic migration, often causing erratic and damaging switching that is highly undesirable for device applications. In this work, we develop an alternative switching mechanism for CIPS using flexoelectric effect, abandoning external electric fields altogether, and the method is motivated by strong correlation between polarization and topography variation of CIPS. Phase-field simulation identifies a critical radius of curvature around 5 μm for strain gradient to be effective, which is realized by engineered topographic surfaces using silver nanowires and optic grating upon which CIPS is transferred to. We also demonstrate mechanical modulation of CIPS on demand via strain gradient underneath a scanning probe, making it possible to engineer multiple polarization states of CIPS for device applications.
Ferroelectric Polarization‐Mediated Modulation of Optical Properties in 2D van der Waals Architectures

Yi Wan,Mingyan Liu,Fang Li,Ziyang Qu,Yibin Zhao,Yuxuan Peng,Pan Li,Zuxin Chen,Shanbao Chen,Jinbo Yang,Chengxi Huang,Erjun Kan

DOI: https://doi.org/10.1002/aelm.202300881

IF: 6.2

2024-04-06

Advanced Electronic Materials

Abstract:A WS2/CuInP2S6 heterostructure is fabricated in such a way that screening charges of opposite signs are supplied to WS2 monolayers by the residual polarization of ferroelectric CuInP2S6 regions with antiparallel orientations. This significantly modifies the proportion of negatively charged trions to neutral excitons in the direct‐gap semiconductor's recombination luminescence, providing a feasible method for non‐volatile, controlled modulation in 2D systems. The integration of 2D ferroelectric materials with 2D photoelectric materials presents a promising avenue for addressing issues related to controlled doping and device integration in layered semiconductors. The reversible and non‐volatile residual polarization inherent to ferroelectrics can provide stable n‐ or p‐type doping for 2D semiconductors. Despite advances in doping strategies for 2D materials, existing techniques, and post‐doping characterization methodologies exhibit limitations, including the challenge of achieving high‐resolution graphical depictions of doped structures. Here, a WS2/CuInP2S6 heterostructure is demonstarted whereby the residual polarization of ferroelectric CuInP2S6 regions with anti‐parallel directions supplies screening charges of opposite signs to WS2 monolayers. This notably alters the ratio of neutral excitons and negatively charged trions within the recombination luminescence of the direct‐gap semiconductor, thereby offering a viable approach for controllable, non‐volatile modulation in 2D systems. Beyond proposing a feasible strategy for patterned doping and effective regulation in 2D semiconductors through interface engineering, this work enhances the understanding of the interplay between ferroelectrics and semiconductors.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Sliding Ferroelectricity Induced Ultrafast Switchable Photovoltaic Response in ε‐InSe Layers

Yufan Wang,Zhouxiaosong Zeng,Zhiqiang Tian,Cheng Li,Kai Braun,Lanyu Huang,Yang Li,Xinyi Luo,Jiali Yi,Guangcheng Wu,Guixian Liu,Dong Li,Yu Zhou,Mingxing Chen,Xiao Wang,Anlian Pan

DOI: https://doi.org/10.1002/adma.202410696

IF: 29.4

2024-09-16

Advanced Materials

Abstract:This work demonstrates the odd‐even layer‐dependence of out‐of‐plane ferroelectricity in ε‐InSe. The device based on the ε‐InSe achieves an on/off ratio of 104 in ferroelectric tunneling junction and ultrafast bulk photovoltaic response in photodetector in the near‐infrared band. Moreover, the photoresponse in ε‐InSe can even exceed graphene in the same conditions, confirming the possibility of application in multifunctional devices. 2D sliding ferroelectric semiconductors have greatly expanded the ferroelectrics family with the flexibility of bandgap and material properties, which hold great promise for ultrathin device applications that combine ferroelectrics with optoelectronics. Besides the induced different resistance states for non‐volatile memories, the switchable ferroelectric polarizations can also modulate the photogenerated carriers for potentially ultrafast optoelectronic devices. Here, it is demonstrated that the room temperature sliding ferroelectricity can be used for ultrafast switchable photovoltaic response in ε‐InSe layers. By first‐principles calculations and experimental characterizations, it is revealed that the ferroelectricity with out‐of‐plane (OOP) polarization only exists in even layer ε‐InSe. The ferroelectricity is also demonstrated in ε‐InSe‐based vertical devices, which exhibit high on‐off ratios (≈104) and non‐volatile storage capabilities. Moreover, the OOP ferroelectricity enables an ultrafast (≈3 ps) bulk photovoltaic response in the near‐infrared band, rendering it a promising material for self‐powered reconfigurable and ultrafast photodetector. This work reveals the essential role of ferroelectric polarization on the photogenerated carrier dynamics and paves the way for hybrid multifunctional ferroelectric and optoelectronic devices.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Picometer‐Level In Situ Manipulation of Ferroelectric Polarization in Van der Waals layered InSe

Hanbin Gao,Ziyuan Liu,Yue Gong,Changming Ke,Ning Guo,Juanxia Wu,Xin Zeng,Jianfeng Guo,Songyang Li,Zhihai Cheng,Jiawei Li,Hongwei Zhu,Li‐Zhi Zhang,Xinfeng Liu,Shi Liu,Liming Xie,Qiang Zheng

DOI: https://doi.org/10.1002/adma.202404628

IF: 29.4

2024-10-06

Advanced Materials

Abstract:Advanced in situ biasing and atomic‐scale imaging in an aberration‐corrected scanning transmission electron microscope are employed to investigate and manipulate in real space local picometer‐level structure variations and polarization in a prototype 2D vdW ferroelectrics InSe. Intralayer sliding within each Se–In–In–Se quadruple‐layer is identified to be responsible for switchable out‐of‐plane polarization and ferroelectricity of InSe. Ferroelectric 2D van der Waals (vdW) layered materials are attracting increasing attention due to their potential applications in next‐generation nanoelectronics and in‐memory computing with polarization‐dependent functionalities. Despite the critical role of polarization in governing ferroelectricity behaviors, its origin and relation with local structures in 2D vdW layered materials have not been fully elucidated so far. Here, intralayer sliding of approximately six degrees within each quadruple‐layer of the prototype 2D vdW ferroelectrics InSe is directly observed and manipulated using sub‐angstrom resolution imaging and in situ biasing in an aberration‐corrected scanning transmission electron microscope. The in situ electric manipulation further indicates that the reversal of intralayer sliding can be achieved by altering the electric field direction. Density functional theory calculations reveal that the reversible picometer‐level intralayer sliding is responsible for switchable out‐of‐plane polarization. The observation and manipulation of intralayer sliding demonstrate the structural origin of ferroelectricity in InSe and establish a dynamic structural variation model for future investigations on more 2D ferroelectric materials.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Intercorrelated in-plane and out-of-plane ferroelectricity in ultrathin two-dimensional layered semiconductor In2Se3.

Chaojie Cui,Wei-Jin Hu,Xingxu Yan,Christopher Addiego,Wenpei Gao,Yao Wang,Zhe Wang,Linze Li,Yingchun Cheng,Peng Li,Xixiang Zhang,Husam N Alshareef,Tom Wu,Wenguang Zhu,Xiaoqing Pan,Lain-Jong Li

DOI: https://doi.org/10.1021/acs.nanolett.7b04852

IF: 10.8

2018-01-01

Nano Letters

Abstract:Enriching the functionality of ferroelectric materials with visible-light sensitivity and multiaxial switching capability would open up new opportunities for their applications in advanced information storage with diverse signal manipulation functions. We report experimental observations of robust intralayer ferroelectricity in two-dimensional (2D) van der Waals layered alpha-In2Se3 ultrathin flakes at room temperature. Distinct from other 2D and conventional ferroelectrics, In2Se3 exhibits intrinsically inter correlated out-of-plane and in-plane polarization, where the reversal. of the out-of-plane polarization by a vertical electric field also induces the rotation of the in-plane polarization. On the basis of the in-plane switchable diode effect and the narrow bandgap (similar to 1.3 eV) of ferroelectric In2Se3, a prototypical nonvolatile memory, device, which can be manipulated both by electric field and visible light illumination, is demonstrated for advancing data storage technologies.
Nonvolatile Electric Control of Exciton Complexes in Monolayer MoSe 2 with Two-Dimensional Ferroelectric CuInP 2 S 6

Xiaoyu Mao,Jun Fu,Chen Chen,Yue Li,Heng Liu,Ming Gong,Hualing Zeng

DOI: https://doi.org/10.1021/acsami.1c03067

2021-05-11

Abstract:Monolayer transition-metal dichalcogenides (TMDs) have provided a platform to investigate the excitonic states at the two-dimensional (2D) limit. The inherent properties of excitons in TMDs, such as the photoluminescence quantum yield, the charge states, and even the binding energy, can be effectively controlled via electrostatic gating, selective carrier doping, or substrate dielectric engineering. Here, aiming for the nonvolatile electrical tunability of excitonic states and thereby the optical property of TMDs, we demonstrate a 2D ferroelectric heterostructure with monolayer MoSe2 and ultrathin CuInP2S6 (CIPS). In the heterostructure, the electric polarization of CIPS results in continuous, global, and large electronic modulation in monolayer MoSe2. With the saturated ferroelectric polarization of CIPS, electron-doped or hole-doped MoSe2 is realized in a single device. The carrier density tunability in the heterostructure is as high as 5 × 1012 cm–2. The nonvolatile behavior of these devices up to 3 months is also characterized. Our results provide a new and practical strategy for low-power consumption and agelong tunable optoelectronic devices.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.1c03067?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.1c03067</a>.Additional characterization results including PFM, PL, and FET measurements and schematic of the electron recoil effect (<a class="ext-link" href="/doi/suppl/10.1021/acsami.1c03067/suppl_file/am1c03067_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology
Polarization-sensitive photoresponse in few-layer ZrSe3 photodetectors.

Pedro Luis Alcázar Ruano,Daniel Vaquero,Estrella Sánchez-Viso,Hao Li,Federico Mompeán,Francisco Dominguez-Adame,Andres Castellanos-Gomez,Jorge Quereda

DOI: https://doi.org/10.1088/2053-1583/ad9287

IF: 6.861

2024-11-24

2D Materials

Abstract:We present an in-depth spectral characterization of the fundamental optical and optoelectronic properties of few-layer ZrSe3, a layered semiconductor of the group IV–V transition metal trichalcogenide family known for its in-plane anisotropic structure and quasi-1D electrical and optical characteristics. Our comprehensive analysis, conducted at both room temperature and in cryogenic vacuum, reveals that ZrSe3 exhibits pronounced excitonic features in its optical spectra, which are highly sensitive to light polarization. These features are also evident in photocurrent spectra, presenting a strongly dichroic photoresponse with dichroic ratios exceeding 4 for excitation on resonance with the main exciton level. By comparing optical and optoelectronic spectral measurements, we elucidate the contributions of optically generated excitons to photocurrent. This work addresses substantial gaps of information in earlier literature for ZrSe3 and advances the understanding of its unique symmetry and optical properties, paving the way for its application in nonlinear optoelectronic devices.

materials science, multidisciplinary
High-performance polarization-sensitive photodetectors on two-dimensional β -InSe

Zhinan Guo,Rui Cao,Huide Wang,Xi Zhang,Fanxu Meng,Xue Chen,Siyan Gao,David K Sang,Thi Huong Nguyen,Anh Tuan Duong,Jinlai Zhao,Yu-Jia Zeng,Sunglae Cho,Bing Zhao,Ping-Heng Tan,Han Zhang,Dianyuan Fan

DOI: https://doi.org/10.1093/nsr/nwab098

IF: 20.6

2021-05-31

National Science Review

Abstract:ABSTRACT Two-dimensional (2D) indium selenide (InSe) has been widely studied for application in transistors and photodetectors, which benefit from its excellent optoelectronic properties. Among the three specific polytypes (γ-, ε- and β-phase) of InSe, only the crystal lattice of InSe in β-phase (β-InSe) belongs to a non-symmetry point group of $D_{6h}^4$, which indicates stronger anisotropic transport behavior and potential in the polarized photodetection of β-InSe-based optoelectronic devices. Therefore, we prepare the stable p-type 2D-layered β-InSe via temperature gradient method. The anisotropic Raman, transport and photoresponse properties of β-InSe have been experimentally and theoretically proven, showing that the β-InSe-based device has a ratio of 3.76 for the maximum to minimum dark current at two orthogonal orientations and a high photocurrent anisotropic ratio of 0.70 at 1 V bias voltage, respectively. The appealing anisotropic properties demonstrated in this work clearly identify β-InSe as a competitive candidate for filter-free polarization-sensitive photodetectors.

multidisciplinary sciences
Interface-tuning of ferroelectricity and quadruple-well state in CuInP$_2$S$_6$ via ferroelectric oxide

Kun Wang,Du Li,Jia Wang,Yifei Hao,Hailey Anderson,Li Yang,Xia Hong

DOI: https://doi.org/10.1021/acsnano.3c03567

2023-08-16

Abstract:Ferroelectric van der Waals CuInP$_2$S$_6$ possesses intriguing quadruple-well states and negative piezoelectricity. Its technological implementation has been impeded by the relatively low Curie temperature (bulk $T_C$ ~42 °C) and the lack of precise domain control. Here we show that CuInP$_2$S$_6$ can be immune to the finite size effect and exhibits enhanced ferroelectricity, piezoelectricity, and polar alignment in the ultrathin limit when interfaced with ferroelectric oxide PbZr$_{0.2}$Ti$_{0.8}$O$_3$ films. Piezoresponse force microscopy studies reveal that the polar domains in thin CuInP$_2$S$_6$ fully conform to those of underlying PbZr$_{0.2}$Ti$_{0.8}$O$_3$, where the piezoelectric coefficient changes sign and increases sharply with reducing thickness. High temperature $in$ $situ$ domain imaging points to a significantly enhanced $T_C$ exceeding 200 °C for 13 nm CuInP$_2$S$_6$ on PbZr$_{0.2}$Ti$_{0.8}$O$_3$. Density functional theory modeling and Monte Carlo simulations show that the enhanced polar alignment and $T_C$ can be attributed to interface-mediated structure distortion in CuInP$_2$S$_6$. Our study provides an effective material strategy to engineer the polar properties of CuInP$_2$S$_6$ for flexible nanoelectronic, optoelectronic, and mechanical applications.

Materials Science,Mesoscale and Nanoscale Physics
The switchable bulk photovoltaic effect in 2D room temperature ferroelectric CuInP2S6

Chengwei Liao,Minglong Wang,Yu-Jun Zhao

DOI: https://doi.org/10.1039/d4ta03402c/v1/review2

IF: 11.9

2024-10-10

Journal of Materials Chemistry A

Abstract:The bulk photovoltaic effect (BPVE) is a crucial branch of nonlinear optics that plays a significant role in fundamental physics and practical applications. In this study, we have investigated the BPVE of a room-temperature ferroelectric material CuInP 2 S 6 (CIPS) through first-principles calculations and nonlinear response theory. It is revealed that there are significant differences in nonlinear photo-responsivity among the ferroelectric, paraelectric, and antiferroelectric phases under monochromatic light. We find that the nonlinear photocurrent can be switched by the chirality of the incident light, depending on the structural symmetry. Using the CI-NEB method, we have studied the evolution of photocurrent during phase transition processes such as polarization reversal and polar-to-nonpolar transitions. We observe that the reversal of ferroelectric ordering can induce a photocurrent flip, attributed to the sign change of topological physical quantities such as the shift vector and Berry curvature. Furthermore, we predict the modulation of photocurrent through chalcogen element substitution and strain engineering. Our study provides an insight into the nonlinear optics of ferroelectric materials and crucial theoretical guidance for the design of optoelectronic and photonic devices.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Switchable bulk photovoltaic effect in 2D room temperature ferroelectric CuInP2S6

Chengwei Liao,Minglong Wang,Yujun Zhao

DOI: https://doi.org/10.1039/d4ta03402c

IF: 11.9

2024-09-25

Journal of Materials Chemistry A

Abstract:The bulk photovoltaic effect (BPVE) is a crucial branch of nonlinear optics, that plays a significant role in fundamental physics and practical applications. In this study, we have investigated the BPVE of a room-temperature ferroelectric material CuInP2S6 (CIPS) through first-principles calculations and nonlinear response theory. It is revealed that, there are significant differences in the nonlinear photo-responsivity among the ferroelectric, paraelectric, and antiferroelectric phases under monochromatic light. We find that the nonlinear photocurrent can be switched by the chirality of the incident light, depending on the structural symmetry. Using the CI-NEB method, we have studied the evolution of photocurrent during phase transition processes such as polarization reversal and polar-to-nonpolar transitions. We observe that the reversal of ferroelectric ordering can induce a photocurrent flip, attributed to the sign change of topological physical quantities such as the shift vector and Berry curvature. Furthermore, we predict the modulation of photocurrent through chalcogen element substitution and strain engineering. Our study provides an insight to the nonlinear optics of ferroelectric materials and crucial theoretical guidance for the design of optoelectronic and photonic devices.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Phase and Polarization Modulation in Two-Dimensional In2Se3 Via in Situ Transmission Electron Microscopy

Xiaodong Zheng,Wei Han,Ke Yang,Lok Wing Wong,Chi Shing Tsang,Ka Hei Lai,Fangyuan Zheng,Tiefeng Yang,Shu Ping Lau,Thuc Hue Ly,Ming Yang,Jiong Zhao

DOI: https://doi.org/10.1126/sciadv.abo0773

IF: 13.6

2022-01-01

Science Advances

Abstract:Phase transitions in two-dimensional (2D) materials promise reversible modulation of material physical and chemical properties in a wide range of applications. 2D van der Waals layered In 2 Se 3 with bistable out-of-plane ferroelectric (FE) α phase and antiferroelectric (AFE) β′ phase is particularly attractive for its electronic applications. However, reversible phase transition in 2D In 2 Se 3 remains challenging. Here, we introduce two factors, dimension (thickness) and strain, which can effectively modulate the phases of 2D In 2 Se 3 . We achieve reversible AFE and out-of-plane FE phase transition in 2D In 2 Se 3 by delicate strain control inside a transmission electron microscope. In addition, the polarizations in 2D FE In 2 Se 3 can also be manipulated in situ at the nanometer-sized contacts, rendering remarkable memristive behavior. Our in situ transmission electron microscopy (TEM) work paves a previously unidentified way for manipulating the correlated FE phases and highlights the great potentials of 2D ferroelectrics for nanoelectromechanical and memory device applications.
Ion migration induced bipolar diode effect and ferroelectricity modulation in CuInP2S6

Dongke Rong,Cheng Tian,Jie Xing,Qiao Jin,Fangyuan Ma,Guozhen Liu,Jie Qiu,Changchun Zhao,Huiying Hao,Jingjing Dong,Hao Liu,Youguo Shi,Er-Jia Guo

DOI: https://doi.org/10.1063/5.0149867

IF: 4

2023-05-01

Applied Physics Letters

Abstract:The coupling between ferroelectricity and ion conductivity always presents unique physical and chemical properties, making it crucial to understand their correlation for the development of advanced functional devices. CuInP2S6 (CIPS), a van der Waals “ferroionic” material, serves as an excellent platform to investigate their intercoupling. In this study, we observe a bipolar diode-like rectification behavior in a vertical Pt/CIPS/In capacitor by controlling the migration of Cu ions. The non-uniform distribution of mobile Cu ions is coupled with ferroelectricity, resulting in a switchable imprint field and an enhanced saturation polarization about 12 μC/cm2 in CIPS. Additionally, CIPS exhibits a significant photovoltaic response due to its robust built-in electric field caused by the unbalanced distribution of Cu ions. This work demonstrates a controllable Cu ions migration and its manipulation on the electrical transport and ferroelectricity in CIPS. The dynamically tunable bipolar diode effect, closely coupled with ferroelectricity in CIPS, has promising prospects in self-powered photodetectors, memristors, and neuromorphic computing.

physics, applied
Modulating the Band Alignments of Two-Dimensional In2Se3/InSe Heterostructure via Ferroelectric Polarization and Interlayer Coupling

Yabing Du,Xiaolong Wang,Xianqi Dai,Wei Li

DOI: https://doi.org/10.3389/fphy.2022.861465

IF: 3.718

2022-04-06

Frontiers in Physics

Abstract:Two-dimensional (2D) ferroelectric materials with robust polarization down to atomic thicknesses provide novel building blocks for functional heterostructures. The effects of ferroelectric polarization on the electronic properties of 2D ferroelectric heterostructures are rarely investigated. Here, based on the first-principles calculations, we study the effect of ferroelectric polarization and interlayer coupling on the electronic properties of the 2D In 2 Se 3 /InSe ferroelectric heterostructure. It is found that the ferroelectric polarization of In 2 Se 3 can effectively tune the band alignments of the In 2 Se 3 /InSe heterostructure. When the direction of ferroelectric polarization is reversed (i.e., from up to down), the band alignments of In 2 Se 3 /InSe heterostructures transition from type I to type II. Meanwhile, we find that the transition between type I and type II band alignments can be induced by means of interlayer coupling (i.e., varying interlayer distances). The results demonstrate that ferroelectric polarization and interlayer coupling are effective methods to modulate the band alignments of In 2 Se 3 /InSe heterostructures.

physics, multidisciplinary
Strong Linearly Polarized Light Emission by Coupling Out-of-Plane Exciton to Anisotropic Gap Plasmon Nanocavity

Kai Xu,Zhen Zou,Wenfei Li,Lan Zhang,Maowen Ge,Tao Wang,Wei Du

DOI: https://doi.org/10.1021/acs.nanolett.3c04899

2024-03-27

Abstract:With exceptional quantum confinement, 2D monolayer semiconductors support a strong excitonic effect, making them an ideal platform for exploring light-matter interactions and as building blocks for novel optoelectronic devices. Different from the well-known in-plane excitons in transition metal dichalcogenides (TMD), the out-of-plane excitons in indium selenide (InSe) usually show weak emission, which limits their applications as light sources. Here, by embedding InSe in an anisotropic gap plasmon nanocavity, we have realized plasmon-enhanced linearly polarized photoluminescence with an anisotropic ratio up to ∼140, corresponding to degree of polarization (DoP) of ∼98.6%. Such polarization selectivity, originating from the polarization-dependent plasmonic enhancement supported by the "nanowire-on-mirror" nanocavity, can be well tuned by the InSe thickness. Moreover, we have also realized an InSe-based light-emitting diode with polarized electroluminescence. Our research highlights the role of excitonic dipole orientation in designing nanophotonic devices and paves the way for developing InSe-based optoelectronic devices with polarization control.
Ferroelectric Polarization Enhanced Optoelectronic Synaptic Response of a CuInP2S6 Transistor Structure

Zixuan Shang,Lingchen Liu,Guangcheng Wang,Hao Xu,Yuanyuan Cui,Jianming Deng,Zheng Lou,Yinzhou Yan,Jinxiang Deng,Su-Ting Han,Tianrui Zhai,Xueyun Wang,Lili Wang,Xiaolei Wang

DOI: https://doi.org/10.1021/acsnano.4c08810

IF: 17.1

2024-11-05

ACS Nano

Abstract:Neuromorphic computing can simulate brain function and is a pivotal element in next-generation computing, providing a potential solution to the limitations brought by the von Neumann bottleneck. Optoelectronic synaptic devices are highly promising tools for simulating biomimetic nervous systems. In this study, we developed an optoelectronic neuromorphic device with a transistor structure constructed using ferroelectric CuInP2S6. Essential synaptic behaviors in this device are observed in response to light and electrical stimuli. The optoferroelectric coupling is revealed, and the highly tunable gate modulation of the charge carrier is realized in a single device. On this basis, the light adaptation of the biological eyes and smarter Pavlovian dogs was implemented successfully and enhanced by ferroelectric polarization. The gate voltage application promotes the migration of additional Cu+ ions in the in-plane direction, thus enhancing the synaptic performance of electrical stimulation. Meanwhile, the processing ability of convolutional kernel noise images in ferroelectric devices has been achieved. Our results offer the important observation and application of ferroelectric polarization-enhanced synaptic properties of a transistor structure and have great potential in promoting the development of two-dimensional van der Waals materials and devices.

Polarization enhanced photoresponse of InSe via 2D ferroelectric CuCrP 2 S 6

Phase Identification and Strong Second Harmonic Generation in Pure Ε-Inse and Its Alloys.

Origin of Versatile Polarization State in CuInP2S6

Spatially Resolved Light-Induced Ferroelectric Polarization in α-In2Se3/Te Heterojunctions

Manipulating Ferroelectric Polarization and Spin Polarization of 2D CuInP2S6 Crystals for Photocatalytic CO2 Reduction

Flexoelectric Engineering of Van Der Waals Ferroelectric CuInP2S6.

Ferroelectric Polarization‐Mediated Modulation of Optical Properties in 2D van der Waals Architectures

Sliding Ferroelectricity Induced Ultrafast Switchable Photovoltaic Response in ε‐InSe Layers

Picometer‐Level In Situ Manipulation of Ferroelectric Polarization in Van der Waals layered InSe

Intercorrelated in-plane and out-of-plane ferroelectricity in ultrathin two-dimensional layered semiconductor In2Se3.

Nonvolatile Electric Control of Exciton Complexes in Monolayer MoSe 2 with Two-Dimensional Ferroelectric CuInP 2 S 6

Polarization-sensitive photoresponse in few-layer ZrSe3 photodetectors.

High-performance polarization-sensitive photodetectors on two-dimensional β -InSe

Interface-tuning of ferroelectricity and quadruple-well state in CuInP$_2$S$_6$ via ferroelectric oxide

The switchable bulk photovoltaic effect in 2D room temperature ferroelectric CuInP2S6

Switchable bulk photovoltaic effect in 2D room temperature ferroelectric CuInP2S6

Phase and Polarization Modulation in Two-Dimensional In2Se3 Via in Situ Transmission Electron Microscopy

Ion migration induced bipolar diode effect and ferroelectricity modulation in CuInP2S6

Modulating the Band Alignments of Two-Dimensional In2Se3/InSe Heterostructure via Ferroelectric Polarization and Interlayer Coupling

Strong Linearly Polarized Light Emission by Coupling Out-of-Plane Exciton to Anisotropic Gap Plasmon Nanocavity

Ferroelectric Polarization Enhanced Optoelectronic Synaptic Response of a CuInP2S6 Transistor Structure