Abstract:Quantum-dot light-emitting diodes (QLEDs) may combine superior properties of colloidal quantum dots (QDs) and advantages of solution-based fabrication techniques to realize high-performance, large-area, and low-cost electroluminescence devices. In the state-of-the-art red QLED, an ultrathin insulating layer inserted between the QD layer and the oxide electron-transporting layer (ETL) is crucial for both optimizing charge balance and preserving the QDs' emissive properties. However, this key insulating layer demands very accurate and precise control over thicknesses at sub-10 nm level, causing substantial difficulties for industrial production. Here, it is reported that interfacial exciton quenching and charge balance can be independently controlled and optimized, leading to devices with efficiency and lifetime comparable to those of state-of-the-art devices. Suppressing exciton quenching at the ETL-QD interface, which is identified as being obligatory for high-performance devices, is achieved by adopting Zn0.9Mg0.1O nanocrystals, instead of ZnO nanocrystals, as ETLs. Optimizing charge balance is readily addressed by other device engineering approaches, such as controlling the oxide ETL/cathode interface and adjusting the thickness of the oxide ETL. These findings are extended to fabrication of high-efficiency green QLEDs without ultrathin insulating layers. The work may rationalize the design and fabrication of high-performance QLEDs without ultrathin insulating layers, representing a step forward to large-scale production and commercialization.

Very Stable and Efficient Tandem Quantum-Dot Light-Emitting Diodes Enabled by IZO-Based Interconnecting Layers

Efficient Tandem Quantum‐Dot LEDs Enabled by An Inorganic Semiconductor‐Metal‐Dielectric Interconnecting Layer Stack (Adv. Mater. 4/2022)

High-Performance Tandem Quantum-Dot Light-Emitting Diodes Based on Bulk-Heterojunction-Like Charge-Generation Layers

Electrochemically Stable Ligands of ZnO Electron-Transporting Layers for Quantum-Dot Light-Emitting Diodes.

Device Physics and Device Chemistry of Quantum-Dot Light-Emitting Diodes

Tailoring Nanostructures of Quantum Dots toward Efficient and Stable All-Solution Processed Quantum Dot Light-Emitting Diodes

Highly stable QLEDs with improved hole injection via quantum dot structure tailoring

Shelf-Stable Green and Blue Quantum Dot Light-Emitting Diodes with High Efficiencies

Anomalous Efficiency Elevation of Quantum-Dot Light-Emitting Diodes Induced by Operational Degradation.

Spectra Stable Quantum Dots Enabled by Band Engineering for Boosting Electroluminescence in Devices

Ultrabright and stable top-emitting quantum-dot light-emitting diodes with negligible angular color shift

PEDOT:PSS-Free Quantum-Dot Light-Emitting Diode with Enhanced Efficiency and Stability

Electronic Structural Insight into High‐Performance Quantum Dot Light‐Emitting Diodes

Improved Performance of Quantum Dot Light-Emitting Diodes by Hybrid Electron Transport Layer Comprised of ZnO Nanoparticles Doped Organic Small Molecule

High Performance Inkjet‐Printed Quantum‐Dot Light‐Emitting Diodes with High Operational Stability

Flexible and tandem quantum-dot light-emitting diodes with individually addressable red/green/blue emission

Shelf-stable quantum-dot light-emitting diodes with high operational performance

Self-Assembled Monolayer for Low-Power-Consumption, Long-Term-Stability, and High-Efficiency Quantum Dot Light-Emitting Diodes

Efficient Quantum-Dot Light-Emitting Diodes Featuring the Interfacial Carrier Relaxation and Exciton Recycling

High-Performance, Solution-Processed, and Insulating-Layer-Free Light-Emitting Diodes Based on Colloidal Quantum Dots.

Fully solution-processed red tandem quantum dot light-emitting diodes with an EQE exceeding 35%