[Differentiation and detection of pathogenic determinants among diarrheogenic Escherichia coli by polymerase chain reaction using mixed primers].

F. Itoh,T. Ogino,K. Itoh,H. Watanabe

1992-07-01

Abstract:

What problem does this paper attempt to address?

An Efficient Green-Emitting Quantum Dot with Near-Unity Quantum Yield and Suppressed Auger Recombination for High-Performance Light-Emitting Diodes

Xiaokun Fan,Zhen Mu,Zhao Chen,Yunfeng Zhan,Fanyuan Meng,Yang Li,Guichuan Xing,Wai-Yeung Wong

DOI: https://doi.org/10.1016/j.cej.2023.142027

IF: 15.1

2023-01-01

Chemical Engineering Journal

Abstract:Near 100% photoluminescence quantum yield (PL QY) is the first target for designing luminescent quantum dots (QDs). Here, an alloyed QD with a core/shell structure of Cd0.194Zn0.806Se0.406S0.594/ZnS is synthesized and characterized by the feature of large core size (about 10 nm) and thin shell (around three ZnS monolayers). It exhibits an efficient green emission with the PL QY of 99.8% and ultra-fast radiative transition rate (kr) of 4.16 x 107 s-1. It demonstrates that the excited state will be rapidly decayed to its ground state through a radiative channel and less vulnerable to non-radiative processes. Under a high pump intensity (254.65 mu J cm - 2), the Cd0.194Zn0.806Se0.406S0.594/ZnS QD still owns a long biexciton decay lifetime (tau xx) of 1.05 ns and high biexciton QYxx of 25.1%, corresponding to a suppressed non-radiative Auger recombination. The Cd0.194Zn0.806Se0.406S0.594/ZnS QD based light-emitting diode exhibits a peak external quantum efficiency of 20.1% and brightness of over105 cd m-2 at 5.2 V. We believe that the Cd0.194Zn0.806Se0.406S0.594/ZnS QD not only provides a near-unity QY but also ensures its QD based light-emitting diode (QLED) with an excellent performance, which could be an excellent QD material for QLED applications.
Device Physics and Device Chemistry of Quantum-Dot Light-Emitting Diodes

Yizheng Jin

DOI: https://doi.org/10.1117/12.2566976

2021-01-01

Abstract:Quantum dots (QDs) are a unique class of emitters with size-tunable emission wavelengths, saturated emission colors, near-unity luminance efficiency, inherent photo- and thermal- stability and excellent solution processability. In the past few years, efficiency and lifetime of quantum-dot light-emitting diodes (QLEDs) achieved tremendous progress. These encouraging facts foreshadow the commercialization of QLEDs, which promises an unprecedented generation of cost-effective, large-area, energy-saving, wide-color-gamut, ultra-thin and flexible displays. Here we review our activities associated with QLEDs, including exciton-generation mechanisms, material chemistry of charge-transporting layers and device engineering.
White light-emitting quantum dot diodes and tuning of luminescence processes

Bozhi Liu,Ruifeng Li,Lian Hu,Huizhen Wu

DOI: https://doi.org/10.1007/s00339-014-8465-5

2014-01-01

Applied Physics A

Abstract:A novel white light-emitting diode based on a large Stokes shift (~200 nm) and using pure green light-emitting CdSeS quantum dots (QDs) with an Ag/ZnSnO/QDs/spiro-TPD/ITO structure has been fabricated in which ZnSnO and spiro-TPD are served as the electron and hole transport layer, respectively. The large Stokes shift of the CdSeS QDs excludes potentially Förster resonance energy transfer process, which allows spiro-TPD to act as both an emitter and hole transport layer. The devices exhibit a wide EL spectrum consisting of three components: blue emission from spiro-TPD, green emission from QD band–band recombination, and red emission from QD surface-state recombination. We further found that as the intensity ratios among these three components vary with bias the color of the QD light-emitting diodes is tunable. The device displays a good white light-emitting characteristic with CIE coordinates of (0.281, 0.384) at an appropriate bias.
Qd-Led Devices Using Znsno As an Electron-Transporting Layer

Liu Bo-Zhi,Li Rui-Feng,Song Ling-Yun,Hu Lian,Zhang Bing-Po,Chen Yong-Yue,Wu Jian-Zhong,Bi Gang,Wang Miao,Wu Hui-Zhen

DOI: https://doi.org/10.7498/aps.62.158504

IF: 0.906

2013-01-01

Acta Physica Sinica

Abstract:We have investigated the light-emitting diodes based on colloidal CdSe quantum dots (QD-LEDs), in which inorganic ZnSnO thin films and organic TPD thin films were used as the electron-transporting layer (ETL) and hole-transporting layer (HTL), respectively. The quantum dots were embedded between the inorganic ETL and organic HTL to form a sandwich structure. ZnSnO ETL was made by magnetron sputtering, while the TPD and QD films were made by spin-coating method. The QD-LEDs display sharp interface and smooth morphology. Optical and electrical characterizations show that QD-LEDs have low turn-on voltage, good monochromaticity, bright electroluminescence and good stability in atmosphere ambient. These characteristics are attributed to the utility of high electron mobility and low carrier concentration of the ZnSnO films used as the ETL. To investigate the device's operation mechanism, the conductivity of ZnSnO was varied during deposition to realize equal injection rate for both electrons and holes, which allows the device to operate optimally.
Highly stable QLEDs with improved hole injection via quantum dot structure tailoring

Weiran Cao,Chaoyu Xiang,Yixing Yang,Qi Chen,Liwei Chen,Xiaolin Yan,Lei Qian

DOI: https://doi.org/10.1038/s41467-018-04986-z

IF: 16.6

2018-07-04

Nature Communications

Abstract:For the state-of-the-art quantum dot light-emitting diodes, while the ZnO nanoparticle layers can provide effective electron injections into quantum dots layers, the hole transporting materials usually cannot guarantee sufficient hole injection owing to the deep valence band of quantum dots. Developing proper hole transporting materials to match energy levels with quantum dots remains a great challenge to further improve the device efficiency and operation lifetime. Here we demonstrate high-performance quantum dot light-emitting diodes with much extended operation lifetime using quantum dots with tailored energy band structures that are favorable for hole injections. These devices show a T95 operation lifetime of more than 2300 h with an initial brightness of 1000 cd m−2, and an equivalent T50 lifetime at 100 cd m−2 of more than 2,200,000 h, which meets the industrial requirement for display applications.

multidisciplinary sciences
High-efficiency, deep blue ZnCdS/CdxZn1-xS/ZnS quantum-dot-light-emitting devices with an EQE exceeding 18

Ouyang Wang,Lei Wang,Zhaohan Li,Qiulei Xu,Qingli Lin,Hongzhe Wang,Zuliang Du,Huaibin Shen,Lin Song Li

DOI: https://doi.org/10.1039/c7nr09175c

IF: 6.7

2018-03-28

Nanoscale

Abstract:We report a facile and robust synthesis of ZnCdS core/shell quantum dots (QDs) with thick CdxZn1-xS (x = constant) uniform alloys as an intermediate shell which can provide effective confinement of excitons within the ZnCdS cores and ultrathin ZnS outermost shell to improve the stability by epitaxial growth at a relatively high temperature. The resulting nearly monodisperse ZnCdS/CdxZn1-xS/ZnS core/shell QDs have high photoluminescence quantum yield (near to 100%) and high color purity (full width at half maximum (FWHM) < 18 nm). More importantly, the ZnCdS/CdxZn1-xS/ZnS core/shell QDs have good chemical/photochemical stability and more efficient carrier transport performance compared with ZnCdS/ZnS core/shell QDs. Two types of QDs of ZnCdS/ZnS and ZnCdS/CdxZn1-xS/ZnS were incorporated into the solution-processed hybrid QD-based light-emitting device structure as the emissive layer. We find that the presence of the CdxZn1-xS shell makes a profound impact on device performances such as the external quantum efficiency and current efficiency. The corresponding light-emitting diodes exhibited a high EQE exceeding 18%, a peak current efficiency of 3.4 cd A-1 and low efficiency roll-off. Such excellent results of ZnCdS/CdxZn1-xS/ZnS-based QLEDs are likely attributable to the QD's high PL QY and very thin ZnS outermost shell which did not sacrifice the charge injection efficiency in QLEDs.
23% power conversion efficiency light-emitting diodes using monolayer quantum dots

Fengjia Fan,Yan Gao,Xiaonan Liu,Bo Li,Huaibin Shen,Yang Song,Jiaojiao Song,Yihua Chong,Ruyun Yao,Shujie Wang,Lin Song Li,Zuliang Du

DOI: https://doi.org/10.21203/rs.3.rs-624492/v1

2021-06-23

Abstract:Abstract Ever since the first proposal of using colloidal quantum dots (QDs) as the active emitting layer of light-emitting diode (LED), a monolayer of QD is considered as a better option than the multilayer ones. Owing to the slow charge transport rate among different QD layers, quantum dot light-emitting diodes (QLEDs) adopting multilayer QDs need to be driven at higher than the bandgap bias voltage to achieve practically useful brightness, resulting in increased power consumptions and heat generations, and reduced device lifetimes. Unfortunately, QLEDs using monolayer QDs always suffer from unwanted recombination in hole transport layers (HTLs) and low external quantum efficiencies (EQEs) as a result of electron overflow from QDs into HTLs. Herein, we tackle this dilemma by packing QDs with large size into monolayers, which enables us to mitigate the unwanted electron overflow and retain high EQE. More importantly, it further allows us to boost the irradiative recombination current at bandgap voltage. By virtue of simultaneously obtained high EQE and irradiative recombination rate, we can achieve brightness of 1,100 cd m-2 and 3,000 cd m-2 at 100% and 105% bandgap voltages with record high power conversion efficiencies (PCEs) of 23% and 22%, respectively. Since heat generation has been depressed and devices can be operated at reduced bias voltage, they show unprecedented T95 operation lifetimes (the time for the luminance to decrease to 95% of the initial value) of more than 4,000 h with an initial brightness of 3,000 cd m-2, and equivalent T95 lifetimes of more than 20,000 h at 1,000 cd m-2.
High-Performance, Solution-Processed, and Insulating-Layer-Free Light-Emitting Diodes Based on Colloidal Quantum Dots.

Zhenxing Zhang,Yuxun Ye,Chaodan Pu,Yunzhou Deng,Xingliang Dai,Xiaopeng Chen,Dong Chen,Xuerong Zheng,Yuan Gao,Wei Fang,Xiaogang Peng,Yizheng Jin

DOI: https://doi.org/10.1002/adma.201801387

IF: 29.4

2018-01-01

Advanced Materials

Abstract:Quantum-dot light-emitting diodes (QLEDs) may combine superior properties of colloidal quantum dots (QDs) and advantages of solution-based fabrication techniques to realize high-performance, large-area, and low-cost electroluminescence devices. In the state-of-the-art red QLED, an ultrathin insulating layer inserted between the QD layer and the oxide electron-transporting layer (ETL) is crucial for both optimizing charge balance and preserving the QDs' emissive properties. However, this key insulating layer demands very accurate and precise control over thicknesses at sub-10 nm level, causing substantial difficulties for industrial production. Here, it is reported that interfacial exciton quenching and charge balance can be independently controlled and optimized, leading to devices with efficiency and lifetime comparable to those of state-of-the-art devices. Suppressing exciton quenching at the ETL-QD interface, which is identified as being obligatory for high-performance devices, is achieved by adopting Zn0.9Mg0.1O nanocrystals, instead of ZnO nanocrystals, as ETLs. Optimizing charge balance is readily addressed by other device engineering approaches, such as controlling the oxide ETL/cathode interface and adjusting the thickness of the oxide ETL. These findings are extended to fabrication of high-efficiency green QLEDs without ultrathin insulating layers. The work may rationalize the design and fabrication of high-performance QLEDs without ultrathin insulating layers, representing a step forward to large-scale production and commercialization.
Boosting the efficiency of inverted quantum dot light-emitting diodes by balancing charge densities and suppressing exciton quenching through band alignment

Jiangyong Pan,Changting Wei,Lixi Wang,Jinyong Zhuang,Qianqian Huang,Wenming Su,Zheng Cui,Arokia Nathan,Wei Lei,Jing Chen

DOI: https://doi.org/10.1039/c7nr06248f

IF: 6.7

2018-01-03

Nanoscale

Abstract:We report an inverted and multilayer quantum dot light emitting diode (QLED) which boosts high efficiency by tuning the energy band alignment between charge transport and light emitting layers. The electron transport layer (ETL) was ZnO nanoparticles (NPs) with an optimized doping concentration of cesium azide (CsN3) to effectively reduce electron flow and balance charge injection. This is by virtue of a 0.27 eV upshift of the ETL's conduction band edge, which inhibits the quenching of excitons and preserves the superior emissive properties of the quantum dots due to the insulating characteristics of CsN3. The demonstrated QLED exhibits a peak current efficiency, power efficiency and external quantum efficiency of up to 13.5 cd A-1, 10.6 lm W-1 and 13.4% for the red QLED, and correspondingly 43.1 cd A-1, 33.6 lm W-1 and 9.1% for green, and 4.1 cd A-1, 2.0 lm W-1 and 6.6% for the blue counterparts. Compared with QLEDs without optimization, the performance of these modified devices shows drastic improvement by 95.6%, 39.4% and 36.7%, respectively. This novel device architecture with heterogeneous energy levels reported here offers a new design strategy for next-generation high efficiency QLED displays and solid-state lighting technologies.
83‐4: High‐Performance Inverted Green and Red InP Quantum‐dot Light Emitting Diodes with Robust ZnS Electron Transport Interlayer

Truong Thi Thuy,Nagarjuna Naik Mude,Jang Hyuk Kwon

DOI: https://doi.org/10.1002/sdtp.16784

2023-06-01

SID Symposium Digest of Technical Papers

Abstract:QLED has received extensive attention for decades. However, the performance of QLEDs is still far behind compared with OLED. We focused on the development of new electron transport layer (ETL), which is mainly degradation issue in QLED device. For the first time, we introduced a new, highly stable, and low‐mobility ZnS ETL and used as an interlayer between ZnO and QDs layer. Devices optimized using ZnO/ZnS cascaded ETLs have a peak EQE of 10.8%, a peak CE of 37.5 cd/A, and the device lifetime (LT70) is 265 hours at 1000 nits which is almost 2.2 times greater than those of devices without ZnS. The predicted LT50 at 100 nits is 60,255 hours which is the highest lifetime reported up to date. Further improve the device performance, we introduced a mixing of hole transporting material (HTM) in QDs layer. Devices have improved almost 3.8 times in their lifetime.
Engineering Architecture of Quantum Dot-Based Light-Emitting Diode for High Device Performance with Double-Sided Emission Fabricated by Nonvacuum Technique

Sajid Hussain,Alagesan Subramanian,Shikai Yan,Nasrud Din,Ghulam Abbas,Ahmed Shuja,Wei Lei,Qasim Khan

DOI: https://doi.org/10.1021/acsaelm.0c00332

IF: 4.494

2020-07-09

ACS Applied Electronic Materials

Abstract:The CdSe/ZnS quantum dots (QDs) have drawn the attention of the researchers due to their superior photophysical properties and their applications in QD-based light-emitting diodes (QLEDs). The conventional CdSe/ZnS-based QLED uses a highly conductive electron-transport layer, low-mobility hole-transporting layers (HTLs), and a vacuum-deposited opaque metal electrode at the top. This structure renders unbalanced charge injection into the emissive layer and also allows the device to emit light only at the bottom side, which affects the device output luminance and stability. Moreover, in the vacuum-deposition technique, the fabrication process is more complex, expensive, and time-consuming. To address all these issues, we fabricated an all-solution processable double-sided emitting QLED by a nonvacuum technique using high mobility multi-HTLs with a cascade structure, an insulating layer, and a transparent silver nanowire (AgNW) electrode for balanced charge injection for obtaining higher luminance at the top-side AgNW electrode. The as-fabricated QLED exhibited a very low turn-on voltage and high luminance of 2.2 V and 41,010 cd m–2, respectively. The QLED has also shown a high current efficiency of 15.2 cd A–1, a luminous efficiency of 16.2 lm W–1, and an external quantum efficiency of 8.2% at the top-side. These results indicate that the double-sided emitting QLED device opens up a pathway for designing next-generation lighting and display devices.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsaelm.0c00332?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsaelm.0c00332</a>.Stability characteristics of the three QLED devices and absorption spectra of the ITO, ITO/AgNW, and ITO/PEDOT:PSS/TFB/CBP samples (<a class="ext-link" href="/doi/suppl/10.1021/acsaelm.0c00332/suppl_file/el0c00332_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,engineering, electrical & electronic
Tailoring Nanostructures of Quantum Dots toward Efficient and Stable All-Solution Processed Quantum Dot Light-Emitting Diodes

Lixi Wang,Jiangyong Pan,Chengjun Liu,Zihan Zhao,Fan Fang,Ye Wang,Guangzhao Wang,Wei Lei,Jing Chen,Dewei Zhao

DOI: https://doi.org/10.1021/acsami.1c02515

2021-04-09

Abstract:Quantum dots (QDs) light-emitting diodes (QLEDs) are considered the most promising candidate for application in displays. While the efficiency of QLEDs has been greatly developed in recent years and is comparable to that of organic light-emitting diodes (OLEDs), it still remains challenging to realize both high efficiency and long lifetimes. In this work, we report efficient and stable red QLEDs with the maximum current efficiency of 13.48 cd A-1, external quantum efficiency of 18.65%, and low efficiency roll-off at high luminance with a long lifetime exceeding ∼2.9 × 105 h, representing a 3-fold increase in stability. Tailoring the composition of QDs suppresses nonradiative Förster resonant energy transfer and Auger recombination and provides favorable valence band alignment to boost the hole injection. Our work suggests that tailoring the nanostructures of QDs offers an effective means to simultaneously achieve high efficiency and high stability, accelerating QLED technology for practical applications in displays and lighting.

materials science, multidisciplinary,nanoscience & nanotechnology
Electrochemically-Stable Ligands Bridge The Photoluminescence-Electroluminescence Gap Of Quantum Dots

Chaodan Pu,Xingliang Dai,Yufei Shu,Meiyi Zhu,Yunzhou Deng,Yizheng Jin,Xiaogang Peng

DOI: https://doi.org/10.1038/s41467-020-14756-5

IF: 16.6

2020-01-01

Nature Communications

Abstract:Colloidal quantum dots are promising emitters for quantum-dot-based light-emitting-diodes. Though quantum dots have been synthesized with efficient, stable, and high colour-purity photoluminescence, inheriting their superior luminescent properties in light-emitting-diodes remains challenging. This is commonly attributed to unbalanced charge injection and/or interfacial exciton quenching in the devices. Here, a general but previously overlooked degradation channel in light-emitting-diodes, i.e., operando electrochemical reactions of surface ligands with injected charge carriers, is identified. We develop a strategy of applying electrochemically-inert ligands to quantum dots with excellent luminescent properties to bridge their photoluminescence-electroluminescence gap. This material-design principle is general for boosting electroluminescence efficiency and lifetime of the light-emitting-diodes, resulting in record-long operational lifetimes for both red-emitting light-emitting-diodes (T-95 > 3800 h at 1000 cdm(-2)) and blue-emitting light-emitting-diodes (T-50 > 10,000 h at 100 cdm(-2)). Our study provides a critical guideline for the quantum dots to be used in optoelectronic and electronic devices.
Nanoshell-driven carrier engineering of large quantum dots enables ultra-stable and efficient LEDs

Dandan Zhang,Jianshun Li,Lei Wang,Yaqi Guo,Weipeng Liu,Qingli Lin,Lin Song Li,Huaibin Shen

DOI: https://doi.org/10.1007/s12274-024-6899-4

IF: 9.9

2024-08-18

Nano Research

Abstract:Quantum dot (QD) light-emitting diodes (QLEDs) have been considered one of the most promising candidates for nextgeneration lighting and displays. However, the suboptimal carrier dynamics at the interface between QDs and the hole transport layer (HTL), such as leakage and quenching induced by the accumulation of electrons at high brightness, severely deteriorates the device's efficiency and stability. Here, we introduced the influence of carrier modulation by nanoshell engineering on the extermal quantum efficiency (EQE) and operation lifetime for QLEDs with large-sized QDs. The shell-driven engineering of energy level positions and band bending effectively eliminates the hole injection barrier and promotes charge injection balance. Photo-assisted Kelvin probe technique reveals that the ZnCdSe/ZnSeS QD/TFB (TFB = poly(9,9-dioctylfluorene-co-N-(4-(3-methylpropyl))diphenylamine)) interface presents an increased surface potential and quasi-Fermi level splitting, reducing heat generation during device operation at high brightness. The shell-driven carrier engineering strategy reveals that our devices exhibit a high external quantum efficiency of 26.44% and an ultralong operation time (exceeding 50,000 h) to 95% of the initial luminance at 1000 cd/m 2 ( T 95 @1000 cd/m 2 ). We anticipate that our results provide insights into resolving the issues at the QDHTL interface and demonstrate the importance of carrier management driven by QD nanostructure tailoring for the commercialization of QLEDs.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Electronic Structural Insight into High‐Performance Quantum Dot Light‐Emitting Diodes

Yang Cheng,Zhixiang Gui,Ruixi Qiao,Shucheng Fang,Guohang Ba,Tianyu Liang,Haoyue Wan,Zhihong Zhang,Can Liu,Chaojie Ma,Hao Hong,Fengjia Fan,Kaihui Liu,Huaibin Shen

DOI: https://doi.org/10.1002/adfm.202207974

IF: 19

2022-09-23

Advanced Functional Materials

Abstract:Crystalline structure‐dependent electronic properties have been understood thoroughly in quantum dot light‐emitting diodes in this work. QD‐LEDs can simultaneously exhibit high external quantum efficiency, roll‐off‐free under high brightness, and dramatically improved operation stability by crystal phase engineering. Quantum dot light‐emitting diodes (QD‐LEDs) are highly promising light sources with excellent figures of merit. Although great successes have been achieved in elevating some key parameters to an ideal level, QD‐LEDs with superior performance in all aspects have rarely been realized. Herein, by exploring crystalline structure‐dependent electronic properties, it is shown that QD‐LEDs can simultaneously exhibit high external quantum efficiency, roll‐off‐free under high brightness, and dramatically improved operational stability. This improved performance stems from the crystal phase engineering of QD. Reduced structure symmetry in the wurtzite phase introduces an unneglectable internal crystal field compared with the zinc‐blende one, which raises both the conduction and valence band energy levels, thus, facilitating a more balanced charge injection. The crystal phase‐optimized superior‐comprehensive performance in the QD‐LED offers a novel degree of freedom for device engineering and promotes commercial applications for the upcoming display and illumination technologies.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Physically Controlled Nucleation for Tunable Quantum Dots and Interface Defect Modification in Light-Emitting Diodes

Qiaocan Huang,Zunxian Yang,Yuliang Ye,Zongyi Meng,Zhiwei Zeng,Hongyi Hong,Songwei Ye,Zhiming Cheng,Qianting Lan,Bingqing Ye,Yuanqing Zhou,Zihong Shen,Wenbo Wu,Jiaxiang Wang,Ye Chen,Hui Zhang,Tailiang Guo,Fushan Li,Yongyi Chen,Zhenzhen Weng

DOI: https://doi.org/10.1021/acsanm.3c05208

IF: 6.14

2024-01-09

ACS Applied Nano Materials

Abstract:Cadmium selenide (CdSe)-based colloidal quantum dots (QDs) exhibit unique properties such as tunable colors, narrow emission, high photoluminescence efficiency, and high stability, making them one of the most promising candidates for next-generation displays. CdSe-based QD light-emitting diodes (QLEDs) have attracted more and more attention mainly due to their advantages including high electroluminescence brightness, low turn-on voltage, and ultrathin device structures. However, there are still many challenges, mainly including the lattice defects aroused by lattice strain during the QD growth process and the surface defects caused by ligand desorption. CdSe-based QLEDs with high photoelectronic performance were finally achieved in our work just by optimizing the synthesis processes and further reducing defects in QD shells. There was a great decrease in the defect density of the QD shell indirectly according to their testing results in the fluorescence lifetime and single-carrier devices. After the reaction system was diluted with a solvent in the hot-injection method, there was some blue shift in the QD emission observed from 595 to 562 nm. Then, with the ZnSe shell further coated onto the QD, the size of the effective emission center was reduced to some extent, and further, a blue shift in the emission was obtained with the wavelength down to 533 nm. Finally, on the outside of the as-synthesized QDs, the ZnS shell was used to passivate and further protect the ZnSe layer, which greatly increased the average fluorescence lifetime of the CdSe-based QDs from 22.94 to 36.41 ns. Additionally, a layer of lithium fluoride (LiF) with optimized thickness was further deposited onto the QD emitting layer to prevent ligand desorption from ethanol solvent cleaning. Therefore, the CdSe-based QD fluorescence efficiency was greatly improved and the maximum external quantum efficiency (EQE) of 8.06% for our CdSe-based QLEDs was achieved with a LiF layer of 3 nm.

materials science, multidisciplinary,nanoscience & nanotechnology
Enhanced performance of quantum dot light-emitting diodes enabled by zirconium doped SnO_2 as electron transport layers

Jinxing Zhao,Zhongwei Man,Shuaibing Wang,Chaoqi Hao,Zhenzhen Yu,Xu Li,Aiwei Tang

DOI: https://doi.org/10.1364/ol.521324

IF: 3.6

2024-04-04

Optics Letters

Abstract:Jinxing Zhao, Zhongwei Man, Shuaibing Wang, Chaoqi Hao, Zhenzhen Yu, Xu Li, Aiwei Tang Next-generation display and lighting based on quantum dot light-emitting diodes (QLEDs) require a balanced electron injection of electron ... [Opt. Lett. 49, 1896-1899 (2024)]

optics
Efficient Quantum Dot Light-Emitting Diodes with a Zn0.85Mg0.15O Interfacial Modification Layer.

Yizhe Sun,Yibin Jiang,Huiren Peng,Jiangliu Wei,Shengdong Zhang,Shuming Chen

DOI: https://doi.org/10.1039/c7nr02099f

IF: 6.7

2017-01-01

Nanoscale

Abstract:Efficient inverted quantum-dot (QD) light-emitting diodes (LEDs) are demonstrated by using 15% Mg doped ZnO (Zn0.85Mg0.15O) as an interfacial modification layer. By doping Mg into ZnO, the conduction band level, the density of oxygen vacancies and the conductivity of the ZnO can be tuned. To suppress excess electron injection, a 13 nm Zn0.85Mg0.15O interlayer with a relatively higher conduction band edge and lower conductivity is inserted between the ZnO electron transport layer and QD light-emitting layer, which improves the balance of charge injection and blocks the non-radiative pathway. Moreover, according to the electrical and optical studies of devices and materials, quenching sites at the ZnO surface are effectively reduced by Mg-doping. Therefore exciton quenching induced by ZnO nanoparticles is largely suppressed by capping ZnO with Zn0.85Mg0.15O. Consequently, the red QLEDs with a Zn0.85Mg0.15O interfacial modification layer exhibit superior performance with a maximum current efficiency of 18.69 cd A-1 and a peak external quantum efficiency of 13.57%, which are about 1.72- and 1.74-fold higher than 10.88 cd A-1 and 7.81% of the devices without Zn0.85Mg0.15O. Similar improvements are also achieved in green QLEDs. Our results indicate that Zn0.85Mg0.15O can serve as an effective interfacial modification layer for suppressing exciton quenching and improving the charge balance of the devices.
Structural Engineering of Colloidal Quantum Dots: Towards Realization of Highly Efficient, Aerobic-Stable, and Droop-Free QLEDs

Sadra Sadeghi,Saeedeh Mokarian Zanjani,Sergey Dayneko,Christian J. Imperiale,Francesco Tintori,Stéphane Kéna-Cohen,Afshin Shahalizad,Majid Pahlevani

2023-05-10

Abstract:Quantum dot light-emitting diodes (QLEDs) are promising building blocks for prospective lighting and display applications. Despite the significant advancements achieved towards increasing the efficiency and brightness levels of QLEDs, the unavoidable demand for an inert atmosphere during the fabrication process restrains their potential for large-scale manufacturing. Here, we demonstrate ZnCdSe/ZnSe/ZnSeS/ZnS core/multi-shell QDs with ultra-thick shell (14 monolayers), significantly suppressing the diffusion of moisture and oxidative species to realize efficient all solution-processed QLED devices fully fabricated under ambient air conditions. The lattice-mismatch-engineered shell growth in the synthesized QDs leads to the strong confinement of charge carriers inside the core and near-unity photoluminescence quantum yield (PLQY) in the amber-to-red wavelength region (595-625 nm). The best amber-emitting QLED devices exhibit an external quantum efficiency (EQE) of 14.8%, a current efficiency (CE) of 41.1 cd/A, and a luminance of 5.6 x 105 cd/m2 at 12 V. To the best of our knowledge, these are the highest efficiency levels achieved in air-fabricated QLEDs. Importantly, the demonstrated devices show significant suppression of non-radiative Auger recombination and optimal charge balance, leading to negligible EQE roll-off (i.e., droop-free behavior) at the maximum luminance level. Furthermore, employing a refractive-index-matched optical compound to enhance light out-coupling increases the EQE to 26.6%, which is comparable to the best devices fabricated in an inert atmosphere. Collectively, these advances will greatly facilitate the large-scale industrial fabrication of air-stable QLEDs.

Optics,Chemical Physics
Efficient Band-Edge Emission from Indirect Bandgap Semiconductor Quantum Dots upon Shell Engineering

Jingwen Zhai,Tieshuan Dong,Yamei Zhou,Jingjing Min,Yuli Yan,Sotirios Baskoutas,Dangdang Xu,Zaiping Zeng,Christos S Garoufalis

DOI: https://doi.org/10.1021/acs.nanolett.3c00008

IF: 10.8

2023-04-07

Nano Letters

Abstract:Environmentally friendly colloidal quantum dots (QDs) of groups III-V are in high demand for next-generation high-performance light-emitting devices for display and lighting, yet many of them (e.g., GaP) suffer from inefficient band-edge emission due to the indirect bandgap nature of their parent materials. Herein, we theoretically demonstrate that efficient band-edge emission can be activated at a critical tensile strain γ(c) enabled by the capping shell when forming a core/shell architecture....

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology

[Differentiation and detection of pathogenic determinants among diarrheogenic Escherichia coli by polymerase chain reaction using mixed primers].

An Efficient Green-Emitting Quantum Dot with Near-Unity Quantum Yield and Suppressed Auger Recombination for High-Performance Light-Emitting Diodes

Device Physics and Device Chemistry of Quantum-Dot Light-Emitting Diodes

White light-emitting quantum dot diodes and tuning of luminescence processes

Qd-Led Devices Using Znsno As an Electron-Transporting Layer

Highly stable QLEDs with improved hole injection via quantum dot structure tailoring

High-efficiency, deep blue ZnCdS/CdxZn1-xS/ZnS quantum-dot-light-emitting devices with an EQE exceeding 18

23% power conversion efficiency light-emitting diodes using monolayer quantum dots

High-Performance, Solution-Processed, and Insulating-Layer-Free Light-Emitting Diodes Based on Colloidal Quantum Dots.

Boosting the efficiency of inverted quantum dot light-emitting diodes by balancing charge densities and suppressing exciton quenching through band alignment

83‐4: High‐Performance Inverted Green and Red InP Quantum‐dot Light Emitting Diodes with Robust ZnS Electron Transport Interlayer

Engineering Architecture of Quantum Dot-Based Light-Emitting Diode for High Device Performance with Double-Sided Emission Fabricated by Nonvacuum Technique

Tailoring Nanostructures of Quantum Dots toward Efficient and Stable All-Solution Processed Quantum Dot Light-Emitting Diodes

Electrochemically-Stable Ligands Bridge The Photoluminescence-Electroluminescence Gap Of Quantum Dots

Nanoshell-driven carrier engineering of large quantum dots enables ultra-stable and efficient LEDs

Electronic Structural Insight into High‐Performance Quantum Dot Light‐Emitting Diodes

Physically Controlled Nucleation for Tunable Quantum Dots and Interface Defect Modification in Light-Emitting Diodes

Enhanced performance of quantum dot light-emitting diodes enabled by zirconium doped SnO_2 as electron transport layers

Efficient Quantum Dot Light-Emitting Diodes with a Zn0.85Mg0.15O Interfacial Modification Layer.

Structural Engineering of Colloidal Quantum Dots: Towards Realization of Highly Efficient, Aerobic-Stable, and Droop-Free QLEDs

Efficient Band-Edge Emission from Indirect Bandgap Semiconductor Quantum Dots upon Shell Engineering