Abstract:The need for integrated passive devices (IPDs) emerges from the increasing consumer demand for electronic product miniaturization. Metal-insulator-metal (MIM) capacitors are vital components of IPD systems. Developing new materials and technologies is essential for advancing capacitor characteristics and co-integrating with other electronic passives. Here we present an innovative electrochemical technology joined with the sputter-deposition of Al and Zr layers to synthesize novel planar nanocomposite metal-oxide dielectrics consisting of ZrO 2 nanorods self-embedded into the nanoporous Al 2 O 3 matrix such that its pores are entirely filled with zirconium oxide. The technology is utilized in MIM capacitors characterized by modern surface and interface analysis techniques and electrical measurements. In the 95–480 nm thickness range, the best-achieved MIM device characteristics are the one-layer capacitance density of 112 nF·cm −2 , the loss tangent of 4·10 −3 at frequencies up to 1 MHz, the leakage current density of 40 pA·cm −2 , the breakdown field strength of up to 10 MV·cm −1 , the energy density of 100 J·cm −3 , the quadratic voltage coefficient of capacitance of 4 ppm·V −2 , and the temperature coefficient of capacitance of 480 ppm·K −1 at 293–423 K at 1 MHz. The outstanding performance, stability, and tunable capacitors' characteristics allow for their application in low-pass filters, coupling/decoupling/bypass circuits, RC oscillators, energy-storage devices, ultrafast charge/discharge units, or high-precision analog-to-digital converters. The capacitor technology based on the non-porous planar anodic-oxide dielectrics complements the electrochemical conception of IPDs that combined, until now, the anodized aluminum interconnection, microresistors, and microinductors, all co-related in one system for use in portable electronic devices. GRAPHICAL

Silicon based Dielectric for Integrated Circuits – An Experimental Study

Scaling Considerations of Inter-Poly Oxide-Nitride-Oxide Dielectric for High-Density Dram Applications

Interface Property of Silicon Nitride Films Grown by Inductively Coupled Plasma Chemical Vapor Deposition and Plasma Enhanced Chemical Vapor Deposition on In0.82al0.18as

Demonstration and Characterization of 500 V MIM Capacitor with Al2O3 Dielectric Layer for Power Integrated Circuits

Investigation of PVD HfO/sub 2/MIM Capacitors for SiRf and Mixed Signal ICs Application

Engineering of voltage nonlinearity in high-k MIM capacitor for analog/mixed-signal ICs

High Quality Ultrathin Gate Dielectrics Prepared by In-Situ RTP

High Density Al2O3/TaN-based Metal–insulator–metal Capacitors in Application to Radio Frequency Integrated Circuits

Improvement of Voltage Linearity in High-&lt;tex&gt;$kappa$&lt;/tex&gt;MIM Capacitors Using&lt;tex&gt;$hbox HfO_2hbox --hbox SiO_2$&lt;/tex&gt;Stacked Dielectric

Dielectric layers suitable for high voltage integrated trench capacitors

Voltage-dependent Capacitance Behavior and Underlying Mechanisms in Metal–insulator–metal Capacitors with Al2O3–ZrO2–SiO2nano-laminates

Metal-insulator-metal Capacitors Using Atomic-Layer-deposited Al2O3∕HfO2∕Al2O3 Sandwiched Dielectrics for Wireless Communications

Electrical Characterization of Metal-Insulator-Metal Capacitors with Atomic-Layer-Deposited Hfo2 Dielectrics for Radio Frequency Integrated Circuit Application

Breakdown voltage and TDDB performance improvement by optimizing the PECVD dielectric film characteristics in MIM capacitors

Fabrication and properties of silicon nitride thin film MIM capacitor

Atomic-layer-deposited Al2O3–HfO2–Al2O3 Dielectrics for Metal-Insulator-metal Capacitor Applications

Dielectric Properties Investigation of Metal–Insulator–Metal (MIM) Capacitors

The planar anodic Al2O3-ZrO2 nanocomposite capacitor dielectrics for advanced passive device integration

Low-loss Si-based Dielectrics for High Frequency Components of Superconducting Detectors

Atomic-layer-deposited Al2O3-HfO2 Laminated and Sandwiched Dielectrics for Metal–insulator–metal Capacitors

RF, DC, and Reliability Characteristics of ALD HfO/sub 2/-Al/sub 2/o/sub 3/ Laminate MIM Capacitors for Si RF IC Applications