High-temperature non-volatile memory technology

Hiroshi Suga

DOI: https://doi.org/10.1038/s41928-024-01172-6

IF: 33.255

2024-05-23

Nature Electronics

Abstract:Nature Electronics, Published online: 22 May 2024; doi:10.1038/s41928-024-01172-6 Non-volatile memory devices capable of recording and reading information at temperatures up to 600 °C can be built using aluminium scandium nitride ferroelectric diodes.

engineering, electrical & electronic

What problem does this paper attempt to address?

A scalable ferroelectric non-volatile memory operating at 600 °C

Dhiren K. Pradhan,David C. Moore,Gwangwoo Kim,Yunfei He,Pariasadat Musavigharavi,Kwan-Ho Kim,Nishant Sharma,Zirun Han,Xingyu Du,Venkata S. Puli,Eric A. Stach,W. Joshua Kennedy,Nicholas R. Glavin,Roy H. Olsson,Deep Jariwala

DOI: https://doi.org/10.1038/s41928-024-01148-6

IF: 33.255

2024-04-30

Nature Electronics

Abstract:Nature Electronics, Published online: 29 April 2024; doi:10.1038/s41928-024-01148-6 A non-volatile memory device that is based on an aluminium scandium nitride (Al0.68Sc0.32N) ferroelectric diode can operate at temperatures of up to 600 °C.

engineering, electrical & electronic
Scalable and Stable Ferroelectric Non-Volatile Memory at > 500 $^\circ$C

Dhiren K. Pradhan,David C. Moore,Gwangwoo Kim,Yunfei He,Pariasadat Musavigharavi,Kwan-Ho Kim,Nishant Sharma,Zirun Han,Xingyu Du,Venkata S. Puli,Eric A. Stach,W. Joshua Kennedy,Nicholas R. Glavin,Roy H. Olsson III,Deep Jariwala

2023-09-09

Abstract:Non-volatile memory (NVM) devices that reliably operate at temperatures above 300 $^\circ$C are currently non-existent and remains a critically unmet challenge in the development of high-temperature (T) resilient electronics, necessary for many emerging, complex computing and sensing in harsh environments. Ferroelectric Al$_x$Sc$_{1-x}$N exhibits strong potential for utilization in NVM devices operating at very high temperatures (> 500 $^\circ$C) given its stable and high remnant polarization (PR) above 100 $\mu$C/cm$^2$ with demonstrated ferroelectric transition temperature (TC) > 1000 $^\circ$C. Here, we demonstrate an Al$_{0.68}$Sc$_{0.32}$N ferroelectric diode based NVM device that can reliably operate with clear ferroelectric switching up to 600 $^\circ$C with distinguishable On and Off states. The coercive field (EC) from the Pulsed I-V measurements is found to be -5.84 (EC-) and +5.98 (EC+) (+/- 0.1) MV/cm at room temperature (RT) and found to decrease with increasing temperature up to 600 $^\circ$C. The devices exhibit high remnant polarizations (> 100 $\mu$C/cm$^2$) which are stable at high temperatures. At 500 $^\circ$C, our devices show 1 million read cycles and stable On-Off ratio above 1 for > 6 hours. Finally, the operating voltages of our AlScN ferrodiodes are < 15 V at 600 $^\circ$C which is well matched and compatible with Silicon Carbide (SiC) based high temperature logic technology, thereby making our demonstration a major step towards commercialization of NVM integrated high-T computers.

Applied Physics
Nonvolatile Electrochemical Memory at 600C Enabled by Composition Phase Separation

Jingxian Li,Andrew J. Jalbert,Leah S. Simakas,Noah J. Geisler,Virgil J. Watkins,Laszlo A. Cline,Elliot J. Fuller,A. Alec Talin,Yiyang Li

2024-10-21

Abstract:CMOS-based microelectronics are limited to ~150°C and therefore not suitable for the extreme high temperatures in aerospace, energy, and space applications. While wide bandgap semiconductors can provide high-temperature logic, nonvolatile memory devices at high temperatures have been challenging. In this work, we develop a nonvolatile electrochemical memory cell that stores and retains analog and digital information at temperatures as high as 600 °C. Through correlative electron microscopy, we show that this high-temperature information retention is a result of composition phase separation between the oxidized and reduced forms of amorphous tantalum oxide. This result demonstrates a memory concept that is resilient at extreme temperatures and reveals phase separation as the principal mechanism that enables nonvolatile information storage in these electrochemical memory cells.

Applied Physics,Materials Science
Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 900 C

Yunfei He,David C. Moore,Yubo Wang,Spencer Ware,Sizhe Ma,Dhiren K. Pradhan,Zekun Hu,Xingyu Du,W. Joshua Kennedy,Nicholas R. Glavin,Roy H. Olsson III,Deep Jariwala

2024-11-26

Abstract:Ferroelectric (FE)-based devices show great promise for non-volatile memory applications, yet few demonstrate reliable operation at elevated temperatures. In this work, we fabricated and characterized metal ferroelectric semiconductor capacitors integrating Aluminum Scandium Nitride onto Silicon Carbide, a prospective high temperature semiconductor for logic operations in extreme environments. The resultant Ni/Al0.68Sc0.32N/4H-SiC structure was evaluated for non-volatile memory performance from room temperature to high-temperature conditions. The 30-nm thick Al0.68Sc0.32N/SiC-based ferroelectric capacitors demonstrated ferroelectric switching at 900 C. The coercive field of the FE layer decreased linearly from -6.4/+11.9 MV cm-1 at room temperature to -3.1/+7.8 MV cm-1 at 800 C. Using positive-up negative-down measurements, we characterized the temperature dependence of remanent polarization. At 600 C, the devices achieved remarkable reliability, demonstrating endurance of ~2000 cycles and retention exceeding 100 hours with negligible polarization loss. Further reliability measurements extended to 800 C with 10,000 secs retention and > 300 endurance cycles, establish these devices as promising candidates for high-temperature memory applications.

Materials Science
Materials for high-temperature digital electronics

Dhiren K. Pradhan,David C. Moore,A. Matt Francis,Jacob Kupernik,W. Joshua Kennedy,Nicholas R. Glavin,Roy H. Olsson III,Deep Jariwala

DOI: https://doi.org/10.1038/s41578-024-00731-9

IF: 83.5

2024-10-19

Nature Reviews Materials

Abstract:Silicon microelectronics, consisting of complementary metal–oxide–semiconductor technology, have changed nearly all aspects of human life from communication to transportation, entertainment and health care. Despite their widespread and mainstream use, current silicon-based devices are unreliable at temperatures exceeding 125 °C. The emergent technological frontiers of space exploration, geothermal energy harvesting, nuclear energy, unmanned avionic systems and autonomous driving will rely on control systems, sensors and communication devices that operate at temperatures as high as 500 °C and beyond. At these extreme temperatures, active (heat exchanger and phase-change cooling) or passive (fins and thermal interface materials) cooling strategies add considerable mass and complicate the systems, which is often infeasible. Thus, new material solutions beyond conventional silicon complementary metal–oxide–semiconductor devices are necessary for high-temperature, resilient electronic systems. The ultimate realization of high-temperature electronic systems requires united efforts to develop, integrate and ultimately manufacture non-silicon-based logic and memory technologies, non-traditional metals for interconnects and ceramic packaging technology.

materials science, multidisciplinary,nanoscience & nanotechnology
Materials for High Temperature Digital Electronics

Dhiren K. Pradhan,David C. Moore,A. Matt Francis,Jacob Kupernik,W. Joshua Kennedy,Nicholas R. Glavin,Roy H. Olsson III,Deep Jariwala

2024-08-22

Abstract:Silicon microelectronics, consisting of complementary metal oxide semiconductor (CMOS) technology, have changed nearly all aspects of human life from communication to transportation, entertainment, and healthcare. Despite the widespread and mainstream use, current silicon-based devices suffer significant reliability issues at temperatures exceeding 125 C. The emergent technological frontiers of space exploration, geothermal energy harvesting, nuclear energy, unmanned avionic systems, and autonomous driving will rely on control systems, sensors, and communication devices which operate at temperatures as high as 500 C and beyond. At these extreme temperatures, active (heat exchanger, phase change cooling) or passive (fins and thermal interface materials) cooling strategies add significant mass and complication which is often infeasible. Thus, new material solutions beyond conventional silicon CMOS devices are necessary for high temperature, resilient electronic systems. Accomplishing this will require a united effort to explore development, integration, and ultimately manufacturing of non-silicon-based logic and memory technologies, non-traditional metals for interconnects, and ceramic packaging technology.

Materials Science,Applied Physics
A van der Waals Ferroelectric Tunnel Junction for Ultrahigh‐Temperature Operation Memory

Wenhui Tang,Xiankun Zhang,Huihui Yu,Li Gao,Qinghua Zhang,Xiaofu Wei,Mengyu Hong,Lin Gu,Qingliang Liao,Zhuo Kang,Zheng Zhang,Yue Zhang

DOI: https://doi.org/10.1002/smtd.202101583

IF: 12.4

2022-02-25

Small Methods

Abstract:Facing the constant scaling down and thus increasingly severe self-heating effect, developing ultrathin and heat-insensitive ferroelectric devices is essential for future electronics. However, conventional ultrathin ferroelectrics and most 2D ferroelectric materials (2DFMs) are not suitable for high-temperature operation due to their low Curie temperature. Here, by using few-layer α-In2 Se3 , a special 2DFM with high Curie temperature, van der Waals (vdW) ferroelectric tunnel junction (FTJ) memories that deliver outstanding and reliable performance at both room and high temperatures are constructed. The vdW FTJs offer a large on/off ratio of 104 at room temperature and still reveal excellent on/off ratio at an ultrahigh temperature of 470 K, which will fail down other 2DFMs. Moreover, long retention and reliable cyclic endurance at high temperature are achieved, showing robust thermal stability of the vdW FTJ memory. The observations of this work demonstrate an exciting promise of α-In2 Se3 for reliable service in high temperature either from self-heating or harsh environments.

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Aluminum Scandium Nitride as a Functional Material at 1000°C

Venkateswarlu Gaddam,Shaurya S. Dabas,Jinghan Gao,David J. Spry,Garrett Baucom,Nicholas G. Rudawski,Tete Yin,Ethan Angerhofer,Philip G. Neudeck,Honggyu Kim,Philip X.-L. Feng,Mark Sheplak,Roozbeh Tabrizian

2024-10-22

Abstract:Aluminum scandium nitride (AlScN) has emerged as a highly promising material for high-temperature applications due to its robust piezoelectric, ferroelectric, and dielectric properties. This study investigates the behavior of Al0.7Sc0.3N thin films in extreme thermal environments, demonstrating functional stability up to 1000°C, making it suitable for use in aerospace, hypersonics, deep-well, and nuclear reactor systems. Tantalum silicide (TaSi2)/Al0.7Sc0.3N/TaSi2 capacitors were fabricated and characterized across a wide temperature range, revealing robust ferroelectric and dielectric properties, along with significant enhancement in piezoelectric performance. At 1000°C, the ferroelectric hysteresis loops showed a substantial reduction in coercive field from 4.3 MV/cm to 1.2 MV/cm, while the longitudinal piezoelectric coefficient increased nearly tenfold, reaching 75.1 pm/V at 800°C. Structural analysis via scanning and transmission electron microscopy confirmed the integrity of the TaSi2/Al0.7Sc0.3N interfaces, even after exposure to extreme temperatures. Furthermore, the electromechanical coupling coefficient was calculated to increase by over 500%, from 12.9% at room temperature to 82% at 700°C. These findings establish AlScN as a versatile material for high-temperature ferroelectric, piezoelectric, and dielectric applications, offering unprecedented thermal stability and functional enhancement.

Materials Science,Mesoscale and Nanoscale Physics,Applied Physics
A Shape-Memory Alloy for High-Temperature Applications

Thomas W. Duerig,Joachim Albrecht,Gernot H. Gessinger

DOI: https://doi.org/10.1007/bf03338156

1982-12-01

JOM

Abstract:An alloy based on the Cu-Al-Ni ternary system has been developed at the research center of Brown, Boveri & Co., Baden, Switzerland, which provides a fully reversible (two-way) shape memory effect at significantly higher temperatures than those afforded by commercial memory alloys such as NiTi and Cu-Zn-Al. The higher temperature capability of this alloy could open new fields for the application of the shape memory effect, particularly in thermal switching and protection devices. After suitable deformation and processing, a shape change is observed while heating the alloy through the temperature interval from 175 to 190°C. This shape change can be completely reversed during subsequent cooling from 155 to 125°C. The magnitude of the reversible strain produced by this alloy is 1.5%; somewhat higher strains can be achieved if lower memory temperatures can be accepted, and conversely, better high temperature capabilities can be achieved by accepting smaller reversible strains. The memory effects in this alloy have been found to be unaffected by short overheatings to temperatures as high as 300°C.

materials science, multidisciplinary,metallurgy & metallurgical engineering,mining & mineral processing,mineralogy
Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory.

Kwan-Ho Kim,Dixiong Wang,P. Musavigharavi,D. Jariwala,Keshava Katti,Xiwen Liu,J. Miao,R. Olsson,E. Stach,Jeffrey X. Zheng

DOI: https://doi.org/10.1021/acs.nanolett.0c05051

2020-10-22

Abstract:Recent advances in oxide ferroelectric (FE) materials have rejuvenated the field of low-power, nonvolatile memories and made FE memories a commercial reality. Despite these advances, progress on commercial FE-RAM based on lead zirconium titanate has stalled due to process challenges. The recent discovery of ferroelectricity in scandium-doped aluminum nitride (AlScN) presents new opportunities for direct memory integration with logic transistors due to the low temperature of AlScN deposition (approximately 350 °C), making it compatible with back end of the line integration on silicon logic. Here, we present a FE-FET device composed of an FE-AlScN dielectric layer integrated with a two-dimensional MoS2 channel. Our devices show an ON/OFF ratio of ∼106, concurrent with a normalized memory window of 0.3 V/nm. The devices also demonstrate stable memory states up to 104 cycles and state retention up to 105 s. Our results suggest that the FE-AlScN/2D combination is ideal for embedded memory and memory-based computing architectures.

Medicine,Engineering,Physics,Materials Science
Al1−xScxN Thin Films at High Temperatures: Sc-Dependent Instability and Anomalous Thermal Expansion

Niklas Wolff,Md Redwanul Islam,Lutz Kirste,Simon Fichtner,Fabian Lofink,Agnė Žukauskaitė,Lorenz Kienle

DOI: https://doi.org/10.3390/mi13081282

IF: 3.4

2022-08-09

Micromachines

Abstract:Ferroelectric thin films of wurtzite-type aluminum scandium nitride (Al1−xScxN) are promising candidates for non-volatile memory applications and high-temperature sensors due to their outstanding functional and thermal stability exceeding most other ferroelectric thin film materials. In this work, the thermal expansion along with the temperature stability and its interrelated effects have been investigated for Al1−xScxN thin films on sapphire Al2O3(0001) with Sc concentrations x (x = 0, 0.09, 0.23, 0.32, 0.40) using in situ X-ray diffraction analyses up to 1100 °C. The selected Al1−xScxN thin films were grown with epitaxial and fiber textured microstructures of high crystal quality, dependent on the choice of growth template, e.g., epitaxial on Al2O3(0001) and fiber texture on Mo(110)/AlN(0001)/Si(100). The presented studies expose an anomalous regime of thermal expansion at high temperatures > ~600 °C, which is described as an isotropic expansion of a and c lattice parameters during annealing. The collected high-temperature data suggest differentiation of the observed thermal expansion behavior into defect-coupled intrinsic and oxygen-impurity-coupled extrinsic contributions. In our hypothesis, intrinsic effects are denoted to the thermal activation, migration and curing of defect structures in the material, whereas extrinsic effects describe the interaction of available oxygen species with these activated defect structures. Their interaction is the dominant process at high temperatures > 800 °C resulting in the stabilization of larger modifications of the unit cell parameters than under exclusion of oxygen. The described phenomena are relevant for manufacturing and operation of new Al1−xScxN-based devices, e.g., in the fields of high-temperature resistant memory or power electronic applications.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
Low Operation Voltage, High-Temperature Reliable, and High-Yield BEOL Integrated Hf$_{\text{0}.\text{5}}$Zr$_{\text{0}.\text{5}}$O$_{\text{2}}$ Ferroelectric Memory Arrays

Shuming Guo,Jiajie Yu,Hao Wang,Xingcheng Jin,Hongbo Li,Chao Wu,Lin Chen,Yinyin Lin,David Wei Zhang

DOI: https://doi.org/10.1109/ted.2024.3394460

IF: 3.1

2024-01-01

IEEE Transactions on Electron Devices

Abstract:Emerging embedded nonvolatile memory (eNVM) based on hafnium oxide ferroelectric materials has shown great advantages such as high reliability, high speed, good scalability, and CMOS process compatibility. Here, a 2T2C structure ferroelectric memory (FRAM) is proposed based on the 180-nm CMOS technology and a TiN/Hf $_{\text{0}.\text{5}}$ Zr $_{\text{0}.\text{5}}$ O $_{\text{2}}$ /TiN ferroelectric capacitor. The device exhibits great ferroelectric properties with the remnant polarization (2P $_{\text{r}}\text{)}$ of 30 $\mu$ C/cm $^{\text{2}}$ under a low operation voltage of 2 V. Also, it shows great high-temperature endurance and retention properties, which has no obvious degradation after 10 $^{\text{10}}$ cycles pulses and 10 $^{\text{4}}$ s under 175 $^{\circ}$ C. In addition, a 2-Mb capacity memory chip with 16 $\times$ 128 kb subarrays using the 2T2C structure and separated word lines (WLs) was fabricated. The wafer can maintain a high yield of 98.28% after baking for 30 h at 175 $^{\circ}$ C, which shows great reliability in the chip level.
Low Operation Voltage, High-Temperature Reliable, and High-Yield BEOL Integrated Hf0.5Zr0.5O2 Ferroelectric Memory Arrays

Shuming Guo,Jiajie Yu,Hao Wang,Xingcheng Jin,Hongbo Li,Chao Wu,Lin Chen,Yinyin Lin,David Wei Zhang

DOI: https://doi.org/10.1109/ted.2024.3394460

IF: 3.1

2024-05-25

IEEE Transactions on Electron Devices

Abstract:Emerging embedded nonvolatile memory (eNVM) based on hafnium oxide ferroelectric materials has shown great advantages such as high reliability, high speed, good scalability, and CMOS process compatibility. Here, a 2T2C structure ferroelectric memory (FRAM) is proposed based on the 180-nm CMOS technology and a TiN/Hf0.5Zr0.5O2/TiN ferroelectric capacitor. The device exhibits great ferroelectric properties with the remnant polarization (2P of C/cm2 under a low operation voltage of 2 V. Also, it shows great high-temperature endurance and retention properties, which has no obvious degradation after 1010 cycles pulses and 104 s under 175 °C. In addition, a 2-Mb capacity memory chip with kb subarrays using the 2T2C structure and separated word lines (WLs) was fabricated. The wafer can maintain a high yield of 98.28% after baking for 30 h at 175 °C, which shows great reliability in the chip level.

engineering, electrical & electronic,physics, applied
The Operation of Lithium Niobate Ferroelectric Domain Wall Memory at 673 K

Haochen Fan,Bowen Shen,Anquan Jiang

DOI: https://doi.org/10.1109/led.2024.3386729

IF: 4.8157

2024-01-01

IEEE Electron Device Letters

Abstract:Oil/gas exploration, aviation, and aerospace systems require the memory to be operated at high temperatures. It is reported that lithium niobate domain wall memory has good performance at 453 K. Meantime, the memory has excellent size scalability with the fabrication compatible with traditional CMOS processes. Here, we increased the operating temperature to 673 K, and found the excellent fatigue resistance performance. After baking at the vacuum condition, the memory device exhibits excellent thermal stability without degradation of obvious electrical properties. This highlights the advantage of the lithium niobate domain wall memory for the application at high-temperature conditions.
High temperature ferroelectric domain wall memory

Jun Jiang,Xiaojie Chai,Chao Wang,Anquan Jiang

DOI: https://doi.org/10.1016/j.jallcom.2020.158155

IF: 6.2

2021-03-01

Journal of Alloys and Compounds

Abstract:For automotive and space applications, the nonvolatile ferroelectric domain wall random access memory (DWRAM) is required to work at a wide temperature range of −40 °C to +150 °C. However, the wall current generally decays with the retention time at high temperatures with the uncertain mechanism. Here we observed the peaked domain wall (DW) currents to decay with time at 450 K in LiNbO3 single crystals, which was correlated with the charge injection into domain wall regions in the mobility of 6.4 × 10−9 cm2/V·s. The extrinsic charge injection suppresses the intrinsic diode-like DW current due to the local Li/O vacancy redistribution to compensate the domain boundary charge. But the injected charge can be removed at an opposite poling voltage and can be frozen upon cooling down to 300 K. The traces of frozen wall regions become conducting upon the wall erasure. Once the memory write and read times are far shorter than the charge injection time, the DWRAM shows good retention of written information with a large on/off current ratio of ~104 at 450 K, suitable to the applications in some extreme conditions.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Additive Manufacturing of High‐Temperature Hybrid Electronics via Molecular‐Decomposed Metals

Saurabh Khuje,Firas Alshatnawi,Detlef Smilgies,Mohammed Alhendi,Abdullah Islam,Jason Armstrong,Jian Yu,Mark Poliks,Shenqiang Ren

DOI: https://doi.org/10.1002/adfm.202311085

IF: 19

2023-10-22

Advanced Functional Materials

Abstract:Harsh operating conditions require a system capable of uncompromising performance in extreme environments. Molecular decomposition metals and additive manufacturing enable high throughput and rapid prototyping of stoichiometry and composition‐controlled copper‐based materials. The resulting Copper─Nickel hybrid is electrically stable for 25 h at 1000 °C, thus paving a way for printed antenna and sensor electronics that can reliably operate in extreme environments. As the modern electronic technology extends into operating in harsh working conditions, it calls for a system that is capable of uncompromising performance in extreme environments, thus providing a strong motivation to look for advanced materials and electronics with the capability of high‐throughput and rapid prototyping. Coupled with additive manufacturing, molecular decomposition metals bypass the challenging oddities of traditional material‐limited and thermally initiated metalworking, enabling high throughput and rapid prototyping of stoichiometry and composition‐controlled metals. Here, a new paradigm for the design and additive manufacturing of copper metallic alloy materials onto ceramics is described by printing molecular decomposable metal materials, capable of withstanding thermo‐mechanical loading, operating in extreme environments in static and dynamic conditions. The resulting printed hybrid electronics are electrically stable for 25 h of aging at 1000 °C. This curious fact paves a way for printed antenna and sensor electronics that reliably operate up to 1000 °C. These results can be further extended to establish other printable molecular decomposable materials as a platform for rapid prototyping of high temperature electronics that are suitable for harsh environments.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Antimony alloys for phase-change memory with high thermal stability

Kin-Fu Kao,Chih-Chung Chang,Frederick T. Chen,Ming-Jinn Tsai,Tsung-Shune Chin

DOI: https://doi.org/10.1016/j.scriptamat.2010.06.036

IF: 6.302

2010-01-01

Scripta Materialia

Abstract:We demonstrate two Sb-based alloys, Ga25Te8Sb67 and Ga18Te12Sb70, that have a crystallization temperature above 245 degrees C and activation energy of crystallization greater than 5 eV, for phase-change memory application. The temperature for 10 year data retention reaches 183 and 210 degrees C for Ga18Te12Sb70 and Ga25Te8Sb67, respectively. Test cells made of alloy Ga25Te8Sb67 show similar memory switching behavior at pulse widths of 500-20 ns. Compared with the benchmark chalcogenide Ge2Sb2Te5, the two antimonide alloys possess much improved thermal stability for applications in phase-change memory. (C) 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
Ultrathin Nitride Ferroic Memory with Large ON/OFF Ratios for Analog In‐memory Computing

Ding Wang,Ping Wang,Shubham Mondal,Mingtao Hu,Yuanpeng Wu,Tao Ma,Zetian Mi

DOI: https://doi.org/10.1002/adma.202210628

IF: 29.4

2023-03-11

Advanced Materials

Abstract:Computing in the analog regime using nonlinear ferroelectric resistive memory arrays can potentially alleviate the energy constraints and complexity/footprint challenges imposed by digital von Neumann systems. Yet the current ferroelectric resistive memories suffer from either low ON/OFF ratios/imprint or limited compatibility with mainstream semiconductors. Here we demonstrate, for the first time, ferroelectric and analog resistive switching in an epitaxial nitride heterojunction comprising ultrathin (∼5 nm) nitride ferroelectrics, i.e., ScAlN, with potentiality to bridge the gap between performance and compatibility. High ON/OFF ratios (up to 105), high uniformity, good retention ( 105 s) and cycling endurance (>104) are simultaneously demonstrated in a metal/oxide/nitride ferroelectric junction. We further demonstrate that the memristor can provide programmability to enable multistate operation and linear analogue computing as well as image processing with high accuracy. Neural network simulations based on the weight update characteristics of the nitride memory yielded an image recognition accuracy of 92.9% (baseline 96.2%) on the images from Modified National Institute of Standards and Technology. The non‐volatile multi‐level programmability and analog computing capability provide first‐hand and landmark evidence for constructing advanced memory/computing architectures based on emerging nitride ferroelectrics, and promote homo and hybrid integrated functional edge devices beyond silicon. This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Monolayer MoS2 Synaptic Transistors for High-Temperature Neuromorphic Applications

Bolun Wang,Xuewen Wang,Enze Wang,Chenyu Li,Ruixuan Peng,Yonghuang Wu,Zeqin Xin,Yufei Sun,Jing Guo,Shoushan Fan,Chen Wang,Jianshi Tang,Kai Liu

DOI: https://doi.org/10.1021/acs.nanolett.1c03684

IF: 10.8

2021-01-01

Nano Letters

Abstract:As essential units in an artificial neural network (ANN), artificial synapses have to adapt to various environments. In particular, the development of synaptic transistors that can work above 125 °C is desirable. However, it is challenging due to the failure of materials or mechanisms at high temperatures. Here, we report a synaptic transistor working at hundreds of degrees Celsius. It employs monolayer MoS2 as the channel and Na+-diffused SiO2 as the ionic gate medium. A large on/off ratio of 106 can be achieved at 350 °C, 5 orders of magnitude higher than that of a normal MoS2 transistor in the same range of gate voltage. The short-term plasticity has a synaptic transistor function as an excellent low-pass dynamic filter. Long-term potentiation/depression and spike-timing-dependent plasticity are demonstrated at 150 °C. An ANN can be simulated, with the recognition accuracy reaching 90%. Our work provides promising strategies for high-temperature neuromorphic applications.
Materials For Phase-Change Memory With Elevated Temperature Stability

kinfu kao,yungching chu,mingjinn tsai,tsungshune chin

DOI: https://doi.org/10.1063/1.4714711

IF: 2.877

2012-01-01

Journal of Applied Physics

Abstract:Thermal stability is one of the key issues in phase-change memory. We try to tackle it by developing new compositions based on Ga-Te-Sb system. Thermal stability is exemplified using Ga18Te12Sb70 which shows crystallization-temperature (T-x) 248 degrees C and activation energy of non-isothermal crystallization 5.9 eV. Films were isothermally soaked at 5 similar to 30 degrees C below T-x to estimate the failure-time when electrical resistance dropped to a half of the original. Arrhenius plot attained using logarithm failure-time versus reciprocal temperature were extrapolated to the temperature corresponding to 10-year failure (T-10y) as 183 degrees C. Pre-crystallization structure upon heating to 2 similar to 5 degrees C below Tx reflects stable amorphous phase of the alloy up to at least 240 degrees C. Memory-cells made of Ga18Te12Sb70 can be set-reset at 20 similar to 500 ns with electrical currents around 66% those of our Ge2Sb2Te5 cells. We suggest that compositions Ga18-25Te8-12Sb67-70 are optimal to ensure T-x > 240 degrees C, T-10y > 180 degrees C and with low operation-currents. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4714711]

High-temperature non-volatile memory technology

A scalable ferroelectric non-volatile memory operating at 600 °C

Scalable and Stable Ferroelectric Non-Volatile Memory at > 500 $^\circ$C

Nonvolatile Electrochemical Memory at 600C Enabled by Composition Phase Separation

Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 900 C

Materials for high-temperature digital electronics

Materials for High Temperature Digital Electronics

A van der Waals Ferroelectric Tunnel Junction for Ultrahigh‐Temperature Operation Memory

Aluminum Scandium Nitride as a Functional Material at 1000°C

A Shape-Memory Alloy for High-Temperature Applications

Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory.

Al1−xScxN Thin Films at High Temperatures: Sc-Dependent Instability and Anomalous Thermal Expansion

Low Operation Voltage, High-Temperature Reliable, and High-Yield BEOL Integrated Hf$_{\text{0}.\text{5}}$Zr$_{\text{0}.\text{5}}$O$_{\text{2}}$ Ferroelectric Memory Arrays

Low Operation Voltage, High-Temperature Reliable, and High-Yield BEOL Integrated Hf0.5Zr0.5O2 Ferroelectric Memory Arrays

The Operation of Lithium Niobate Ferroelectric Domain Wall Memory at 673 K

High temperature ferroelectric domain wall memory

Additive Manufacturing of High‐Temperature Hybrid Electronics via Molecular‐Decomposed Metals

Antimony alloys for phase-change memory with high thermal stability

Ultrathin Nitride Ferroic Memory with Large ON/OFF Ratios for Analog In‐memory Computing

Monolayer MoS2 Synaptic Transistors for High-Temperature Neuromorphic Applications

Materials For Phase-Change Memory With Elevated Temperature Stability