Single-hole transistor in p-type GaAs/AlGaAs heterostructures

Boris Grbic,Renaud Leturcq,Klaus Ensslin,Dirk Reuter,Andreas D. Wieck

DOI: https://doi.org/10.1063/1.2139994

2005-10-22

Abstract:A single-hole transistor is patterned in a p-type, C-doped GaAs/AlGaAs heterostructure by AFM oxidation lithography. Clear Coulomb blockade resonances have been observed at T=300 mK. A charging energy of ~ 1.5 meV is extracted from Coulomb diamond measurements, in agreement with the lithographic dimensions of the dot. The absence of excited states in Coulomb diamond measurements, as well as the temperature dependence of Coulomb peak heights indicate that the dot is in the multi-level transport regime. Fluctuations in peak spacings larger than the estimated mean single-particle level spacing are observed.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to realize a single - hole transistor in p - type GaAs/AlGaAs heterostructures and study its Coulomb blockade (CB) phenomenon. Specifically, the author hopes to fabricate quantum dots in p - type carbon - doped GaAs/AlGaAs heterostructures by atomic force microscope oxidation lithography (AFM oxidation lithography) and verify their performance and characteristics through experiments.

### Main research objectives:
1. **Fabricate single - hole transistors**: Use AFM oxidation lithography to fabricate quantum dots in p - type GaAs/AlGaAs heterostructures.
2. **Observe the Coulomb blockade phenomenon**: Observe and analyze the Coulomb blockade effect through low - temperature transport measurements (such as differential conductance measurement, Coulomb diamond diagram, etc.).
3. **Study the physical properties in low - dimensional hole systems**: Explore the influence of spin - orbit interaction and carrier - carrier Coulomb interaction in low - dimensional hole systems, especially the differences compared with electron systems.
4. **Explore the multi - level transport mechanism**: Analyze the influence of temperature on the height of Coulomb peaks and the fluctuation of peak spacing to understand the multi - level transport mechanism.

### Key findings:
- **Successfully fabricated single - hole transistors**: Quantum dots were successfully fabricated in p - type GaAs/AlGaAs heterostructures by AFM oxidation lithography, and clear Coulomb resonances were observed.
- **Estimation of Coulomb blockade energy**: The charging energy of the quantum dot was estimated to be approximately 1.5 meV from the Coulomb diamond diagram measurement, which is consistent with the lithographic size.
- **Multi - level transport mechanism**: Due to the large effective mass of holes, the single - particle energy level spacing is small (about 15 µeV), so the system is in a multi - level transport mechanism and the excited states cannot be distinguished.
- **Temperature dependence**: As the temperature increases, the height of the Coulomb peaks increases, further confirming that the system is in a multi - level transport mechanism.
- **Peak spacing fluctuation**: Significant fluctuations in peak spacing were observed, which may indicate the importance of strong carrier - carrier interactions in hole quantum dots.

### Formula summary:
- **Charging energy formula**:
\[
E_C=\frac{e^2}{C}
\]
where \(C\) is the capacitance of the quantum dot, estimated as \(C\approx1.1\times 10^{-16}\text{F}\).

- **Single - particle energy level spacing formula**:
\[
\Delta=\frac{2\pi\hbar^2}{g m^* A}
\]
where \(g\) is the degeneracy of the hole state, \(m^*\) is the effective mass of the hole, and \(A\) is the electronic area of the quantum dot.

These research results provide important experimental basis and technical support for further exploring physical phenomena in low - dimensional hole systems.