D. Alexiev,D. A. Prokopovich,L. Mo
Abstract:A method has been developed to permit the diffusion of Sb into Ge at high temperatures (~850 C) without contamination by fast diffusing electrically active impurities in particular by Cu. A liquid metal alloy is used as a getter of Cu and other fast diffusing impurities. This alloy, Ga- In eutectic, completely encloses the Ge sample although in physical contact on only one face. The behaviour of Cu as a contaminant in Ge and the methods known to prevent and extract (or gather) Cu contamination are reviewed briefly. Preliminary experiments are described which demonstrate the difficulty of removing fast diffusing impurities in spite of the use of liquid metal getter (Ge-In and Au). The advantages and disadvantages of the technique are discussed.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is: when diffusing Sb into Ge under high - temperature conditions (about 850°C), how to prevent Ge samples from being contaminated by rapidly diffusing electro - active impurities, especially Cu. As an electro - active impurity, Cu will rapidly diffuse into Ge at high temperatures, leading to a decline in its performance. Especially in applications such as high - resolution radiation detectors, Cu contamination will significantly reduce the purity and performance of the material.
### Specific background of the problem
1. **Characteristics of Cu in Ge**:
- Cu has a very high diffusion coefficient in Ge, especially at high temperatures (such as 850°C), and its diffusion coefficient is \(4\times 10^{-3}\, \text{cm}^2/\text{s}\), which is much higher than that of other common dopants (such as Ga, In, B, As, Sb and P).
- Cu can exist in two forms in Ge: it acts as an acceptor when it is a substitutional atom, and it acts as a donor when it is an interstitial atom. The acceptor energy level is triply charged, while the donor is singly charged.
- At room temperature, Cu acts as an acceptor, resulting in a reduction in the lifetime of Ge.
2. **Effects of Cu contamination**:
- Cu contamination will lead to a decline in the electrical properties of Ge materials, especially in applications requiring high - purity materials, such as high - resolution radiation detectors. The presence of Cu will lead to a reduction in the resolution of the material and affect its performance.
- During high - temperature annealing, Cu will rapidly diffuse into Ge, forming an impurity gradient, making the electrical properties of the material non - uniform.
### Solution
In order to prevent Cu contamination, the author proposes a method using a liquid - metal alloy (Ga - In eutectic) as a gettering agent. The specific steps are as follows:
1. **Completely enclose the Ge sample**: By placing the Ge sample in an Al₂O₃ "pill - box" with the interior coated with Ga - In eutectic, ensure that the Ge sample is completely surrounded by the liquid metal at high temperatures.
2. **High - temperature diffusion experiment**: Conduct an Sb diffusion experiment at 850°C for 1 - 2 hours. Since the diffusion coefficient of Ga - In eutectic is much lower than that of Cu, it can effectively absorb Cu impurities and prevent them from diffusing into Ge.
3. **Verify the effect**: Verify the effectiveness of this method through resistivity measurement and thermal probe measurement. The results show that the treated Ge samples are free from Cu contamination and maintain good electrical properties.
### Conclusion
This method has successfully solved the problem of Cu contamination when diffusing Sb into Ge at high temperatures. Although this method will lead to a certain amount of Ge material loss, it can effectively prevent Cu contamination and can be applied to situations where high - purity Ge materials are required. Future work will further study the influence of Cu content on material properties to optimize this process.