Preparation of Cu2Sn1-Ge S3 bulk single crystals by chemical vapor transport with iodine

Riki Fujita,Nobuo Saito,Kenichiro Kosugi,Kunihiko Tanaka
DOI: https://doi.org/10.1016/j.jcrysgro.2018.06.031
IF: 1.8
2018-09-01
Journal of Crystal Growth
Abstract:Bulk crystals of monoclinic Cu2Sn1− x Ge x S3 were prepared by chemical vapor transport with iodine. The samples were investigated using electron-probe microanalysis, transmission electron microscopy, Raman spectroscopy and X-ray diffraction (XRD). All of the samples had a Cu-rich and S-poor composition. As the Ge content increased, the XRD peaks shifted to higher angle, the Raman peaks shifted to higher wavenumber, and the lattice constants decreased. Selected-area electron diffraction patterns showed that the samples were single crystal and had a monoclinic structure.
materials science, multidisciplinary,physics, applied,crystallography
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