Magnetotransport in C-doped AlGaAs heterostructures

B. Grbic,C. Ellenberger,T. Ihn,K.Ensslin,D. Reuter,A. D. Wieck

DOI: https://doi.org/10.1063/1.1781750

2004-10-10

Abstract:High-quality C-doped p-type AlGaAs heterostructures with mobilities exceeding 150 000 cm$^2$/Vs are investigated by low-temperature magnetotransport experiments. We find features of the fractional quantum Hall effect as well as a highly resolved Shubnikov-de Haas oscillations at low magnetic fields. This allows us to determine the densities, effective masses and mobilities of the holes populating the spin-split subbands arising from the lack of inversion symmetry in these structures.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to study the magnetic transport properties in C - doped p - type AlGaAs heterostructures. Specifically, the authors hope to explore the following issues through low - temperature magnetic transport experiments:

1. **Characteristics of high - mobility samples**: Verify whether C - doped p - type AlGaAs heterostructures can achieve extremely high carrier mobilities (exceeding 150,000 cm²/Vs) and analyze their electronic properties.

2. **Fractional quantum Hall effect (FQHE) and Shubnikov - de Haas oscillations**: Observe these phenomena experimentally to determine the density, effective mass, and mobility of holes in spin - split sub - bands. These phenomena are caused by spin - splitting due to the lack of inversion symmetry.

3. **Effects of spin - splitting and effective magnetic fields**: Study the influence of the effective in - plane magnetic field \( B_{\text{eff}} \) caused by strong spin - orbit coupling on carrier behavior, especially the variation of the effective magnetic field at different wave vectors \( k \).

4. **Relationship between carrier imbalance and magnetoresistance**: Explore the relationship between the carrier density difference (i.e., carrier imbalance) in different energy spin sub - bands and positive magnetoresistance, especially its performance at low magnetic fields.

5. **Measurement of effective mass and scattering time**: Determine the effective mass of holes in high - mobility spin sub - bands through the amplitude - temperature dependence of Shubnikov - de Haas oscillations at low temperatures, and obtain the quantum scattering time and Drude scattering time by fitting the SdH oscillation envelope function.

6. **Application potential of materials**: Evaluate the electronic performance of C - doped (100) AlGaAs - GaAs heterostructures, and compared with existing Si - doped (311) samples, explore their application prospects in nanostructure fabrication, such as quantum dots and quantum point contacts.

In summary, this paper aims to reveal the unique electronic behaviors and physical mechanisms in C - doped p - type AlGaAs heterostructures through detailed magnetic transport experiments, providing theoretical and experimental bases for further developing high - performance semiconductor devices.