Abstract:An innovative dual-step nitrogen (N 2 ) ambient was introduced for growth and post-deposition annealing of gallium oxide (Ga 2 O 3 ) films at various temperatures (600, 700, 800, and 900 °C). This study aimed to investigate the crystal structure, morphological formation, and optical and electrical characteristics of the films. The fabricated films were characterized employing a variety of spectroscopic and microscopic techniques, including grazing incidence X-ray diffraction, energy-dispersive X-ray spectroscopy, field emission scanning electron microscopy, atomic force microscopy, ultraviolet–visible spectroscopy, photoluminescence, and semiconductor parameter analyzer. A mixing phase of cubic (γ-Ga 2 O 3 ) and monoclinic (β-Ga 2 O 3 ) phases was observed with respect to temperature. Notably, the γ-Ga 2 O 3 was transformed to β-Ga 2 O 3 phase at 900 °C, resulting in crystallinity enhancement, narrowing of full-width at half-maximum, and reduction of dislocation density. The films exhibited a smooth nanostructured surface with low roughness and homogeneous topography. The direct bandgap energy of the Ga 2 O 3 films was in the range of 4.56–4.71 eV, with the highest value perceived at 800 °C, which contributed to the highest critical electric breakdown field ( E c ). The highest E c obtained by this sample however did not translate into the lowest leakage current density. The findings highlighted the potential application of Ga 2 O 3 films for the next-generation optoelectronic devices. Detailed investigation of the work and obtained results were presented systematically in this work.

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