Tunneling spin-galvanic effect

S.A. Tarasenko,V.I. Perel',I.N. Yassievich

DOI: https://doi.org/10.1103/PhysRevLett.93.056601

2003-10-06

Abstract:It has been shown that tunneling of spin-polarized electrons through a semiconductor barrier is accompanied by generation of an electric current in the plane of the interfaces. The direction of this interface current is determined by the spin orientation of the electrons, in particular the current changes its direction if the spin orientation changes the sign. Microscopic origin of such a 'tunneling spin-galvanic' effect is the spin-orbit coupling-induced dependence of the barrier transparency on the spin orientation and the wavevector of electrons.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **How to generate interface current in semiconductor heterostructures through the tunneling effect of spin - polarized electrons, and explore its microscopic mechanism**.

Specifically, the paper focuses on whether current conduction can be generated at the interface when spin - polarized electrons pass through the semiconductor barrier. This phenomenon is called the "tunneling spin - galvanic effect". The generation of this effect depends on spin - orbit coupling, that is, the relationship between the transmission probability of spin - polarized electrons and their spin direction and wave vector.

### Key issues
1. **Interface current generated by spin - polarized electron tunneling**:
- The paper shows that when spin - polarized electrons pass through the semiconductor barrier, an in - plane current conduction will be generated at the interface.
- The direction of the current is determined by the spin direction of the electrons. If the spin direction changes sign, the current direction will also change.

2. **Microscopic mechanism**:
- Spin - orbit coupling leads to the dependence of barrier transparency on spin direction and wave vector.
- Specifically, Rashba spin - orbit coupling and Dresselhaus spin splitting are two main microscopic mechanisms, which are respectively caused by asymmetric barriers and non - centrosymmetric materials.

3. **Theoretical model and calculation**:
- Use the spin density matrix technique to describe the transmission of spin - polarized electrons.
- Derive the expressions of the interface current, such as formulas (1) and (9), and discuss the direction and magnitude of the current in different cases.

### Application prospects
This research provides a theoretical basis for the development of non - magnetic semiconductor spin - polarized carrier detectors and helps promote the development of the spintronics field.

### Formula summary
- The expression of the interface current is:
\[
j_{\parallel} = e \sum_k \tau_p v_{\parallel}(k) \text{Tr}[\hat{g}(k)]
\]
where \( e \) is the electron charge, \( \tau_p \) is the momentum relaxation time, \( v_{\parallel}(k) \) is the velocity related to the wave vector \( k \), and \( \hat{g}(k) \) is the spin matrix describing the electron flux passing through the barrier.

- For the transmission coefficient in the case of Dresselhaus spin splitting:
\[
t_{\pm} = t_0 \exp\left( \pm \frac{\gamma m_2 k_{\parallel}}{\hbar^2 a q_0} \right)
\]
where \( t_0 \) is the transmission coefficient when spin - orbit coupling is ignored, \( \gamma \) is the Dresselhaus spin - orbit coupling constant, \( m_2 \) is the effective mass in the barrier, \( q_0 \approx \sqrt{\frac{2m_2 V}{\hbar^2}} \) is the decay length of the wave function in the barrier, and \( V \) and \( a \) are the height and width of the barrier respectively.

Through these studies, the author shows the possibility of the tunneling spin - galvanic effect and its potential application value.