Spin-Polaronic Effects in Electric Shuttling in a Single Molecule Transistor with Magnetic Leads

Olya A. Ilinskaya,Danko Radic,Hee Chul Park,Ilya V. Krive,Robert I. Shekhter,Mats Jonson
DOI: https://doi.org/10.1016/j.physe.2020.114151
2020-03-03
Abstract:Current-voltage characteristics of a spintromechanical device, in which spin-polarized electrons tunnel between magnetic leads with anti-parallel magnetization through a single level movable quantum dot, are calculated. New exchange- and electromechanical coupling-induced (spin-polaronic) effects that determine strongly nonlinear current-voltage characteristics were found. In the low-voltage regime of electron transport the voltage-dependent and exchange field-induced displacement of quantum dot towards the source electrode leads to nonmonotonic behavior of differential conductance that demonstrates the lifting of spin-polaronic effects by electric field. At high voltages the onset of electron shuttling results in the drop of current and negative differential conductance, caused by mechanically-induced increase of tunnel resistivities and exchange field-induced suppression of spin-flips in magnetic field. The dependence of these predicted spin effects on the oscillations frequency of the dot and the strength of electron-electron correlations is discussed.
Mesoscale and Nanoscale Physics
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