Abstract:Ionic liquids enable efficient gating of materials with nanoscale morphology due to the formation of a nanoscale double layer that can also follow strongly vaulted surfaces. On carbon nanotubes, this can lead to the formation of a cylindrical gate layer, allowing an ideal control of the drain current even at small gate voltages. In this work, we apply ionic liquid gating to chirality-sorted (9, 8) carbon nanotubes bridging metallic electrodes with gap sizes of 20 nm and 10 nm. The single-tube devices exhibit diameter-normalized current densities of up to 2.57 mA/<i>μ</i>m, on-off ratios up to 10<sup>4</sup>, and a subthreshold swing down to 100 mV/dec. Measurements after long vacuum storage indicate that the hysteresis of ionic liquid gated devices depends not only on the gate voltage sweep rate and the polarization dynamics but also on charge traps in the vicinity of the carbon nanotube, which, in turn, might act as trap states for the ionic liquid ions. The ambipolar transfer characteristics are compared with calculations based on the Landauer–Büttiker formalism. Qualitative agreement is demonstrated, and the possible reasons for quantitative deviations and possible improvements to the model are discussed. Besides being of fundamental interest, the results have potential relevance for biosensing applications employing high-density device arrays.

Local gating of carbon nanotubes

Self-aligned Electrodes for Suspended Carbon Nanotube Structures

Locally Addressable Tunnel Barriers within a Carbon Nanotube

Local Gate Effect of Mechanically Deformed Crossed Carbon Nanotube Junction.

Fabrication and Characterization of Gated Carbon Nanotube Emitters in A Trench Structure

Fabrication of Self-Aligned Side Gates to Carbon Nanotubes

Interface States in Gate Stack of Carbon Nanotube Array Transistors.

Self-aligned Split Gate Electrodes Fabricated on Suspended Carbon Nanotubes

Fabrication and electrical characteristics of carbon nanotube field emission microcathodes with an integrated gate electrode

Ionic liquid gating of single-walled carbon nanotube devices with ultra-short channel length down to 10 nm

Gate Capacitance Coupling of Double-Gate Carbon Nanotube Network Transistors

Integration of a gate electrode into carbon nanotube devices for scanning tunneling microscopy

On Gate Capacitance Of Nanotube Networks

Using Nanoscale Thermocapillary Flows to Create Arrays of Purely Semiconducting Single-Walled Carbon Nanotubes

Gate-Defined Quantum Dots on Carbon Nanotubes

Nanoelectromechanical Switches with Vertically Aligned Carbon Nanotubes

Gated armchair nanotube and metallic field effect

Direct Growth of Horizontally Aligned Carbon Nanotubes Between Electrodes and Its Application to Field-Effect Transistors

Non‐Local Electrostatic Gating Effect in Graphene Revealed by Infrared Nano‐Imaging

Quantum Capacitance Induced Non-Local Electrostatic Gating Effect in Graphene

Interference effects in electronic transport through metallic single-wall carbon nanotubes