1000V wide input auxiliary power supply design with 1700V Silicon Carbide (SiC) MOSFET for three-phase applications

J. Mookken,K. Wong,Jimmy Liu

DOI: https://doi.org/10.1109/APEC.2014.6803656

2014-03-16

Abstract:The paper proposes a single end Flyback design with Silicon Carbide (SiC) based 1700V MOSFET to replace conventional two-switch Flyback converter. An active start-up circuit with 1700V SiC MOSFET is implemented to optimize the converter design with wide input voltage from 200Vdc to 1000Vdc and lower power losses. A 60W auxiliary power supply is developed to demonstrate higher performance and less components counts to support wide input voltage range with this new 1700V SiC MOSFET device.

Engineering,Materials Science,Physics