Abstract:The transverse magnetoconductivity ${\ensuremath{\sigma}}_{\mathrm{xx}}$ of a two-dimensional electron gas (2D EG) in selectively doped ${\mathrm{Al}}_{0.3}$${\mathrm{Ga}}_{0.7}$As/ ${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$${\mathrm{In}}_{\mathrm{x}}$As/GaAs pseudomorphic structures is shown to behave very differently from that of the ${\mathrm{Al}}_{0.3}$${\mathrm{Ga}}_{0.7}$As/GaAs structures in the quantum Hall regime. Well-defined peaks of transverse conductivity ${\ensuremath{\sigma}}_{\mathrm{xx}}$ corresponding to each Landau level were observed and their peak heights increased with the increase of InAs composition. Also, the peak height of ${\ensuremath{\sigma}}_{\mathrm{xx}}$ increases with the Landau number N in the pseudomorphic structure, especially for samples with x\ensuremath{\ge}0.13 ${\ensuremath{\sigma}}_{\mathrm{xx}}$ varies in proportional to N+(1/2, whereas it remains almost unchanged when N increased in the ${\mathrm{Al}}_{\mathrm{y}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{y}}$As/GaAs structures. The behavior of ${\ensuremath{\sigma}}_{\mathrm{xx}}$ for the pseudomorphic structure is very similar to that of the 2D EG formed in the inversion layer of the Si metal-oxide-semiconductor field-effect transistor. The observed difference between the pseudomorphic structure and the ${\mathrm{Al}}_{\mathrm{y}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{y}}$As/GaAs heterostructure is interpreted in terms of the change in the dominant scattering mechanism, i.e., the short-range cluster scattering in the former, and the long-range scattering in the latter.

Photoluminescence investigations of 2D hole Landau levels in p-type single Al_{x}Ga_{1-x}As/GaAs heterostructures

High Magnetic Field Studies Of Charged Exciton Localization In Gaas/Alxga1-Xas Quantum Wells

Coexistence of Nearly Free and Strongly Bound Trions from Magneto-Photoluminescence of Two-Dimensional Quantum Structures with Tunable Electron or Hole Concentration

Magnetoconductivity of a two-dimensional electron gas in Al0.3Ga0.7As/Ga1−xInxAs/GaAs pseudomorphic heterostructures in the quantum hall regime

Direct Observation of Above-Quantum-step Quasibound States Ingaas/alx

Magnetic Field Induced Charged Exciton Studies in a GaAs/Al(0.3)Ga(0.7)As Single Heterojunction

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Г-Г Photoluminescence from Type II Short-Period GaAs-AlAs Superlattices

Excitons in the wurtzite AlGaN/GaN quantum-well heterostructures

PHOTOLUMINESCENCE INVESTIGATION OF FERMI-EDGE SINGULARITY IN Δ-Doped HEMT_3 Al_(0.30)Ga_(0.70)A_3/In_(0.15)Ga_(0.85)As/GaAs

Band Offset in (Ga,In)As/Ga(As,Sb) Heterostructures

Landau Level Spectrum in A Two-Dimensional Hole Gas in C-Doped (100) Gaas/Al0.4ga0.6as Square Quantum Well

Optical properties and dynamics of direct and spatially and momentum indirect excitons in AlGaAs/AlAs quantum wells

Characterization Of Al0.4ga0.6as/Gaas Aperiodic Superlattices By Photoluminescence Spectroscopy At 2 K

Radiative Recombination Spectra of Heavily p-Type delta-Doped Gaas/Alas MQWs

Photoluminescence Related to the Two Dimensional Electron Gas in Modulation-Doped Al_x Ga_(1-x)N/GaN Heterostructures

Probing Semiconductor Band Structures and Heterojunction Interface Properties with Ballistic Carrier Emission: Gaas/Alxga1-Xas As A Model System

Selectively Excited Photoluminescence of GaAs1−xSbx/GaAs Single Quantum Wells

Photoluminescence from the Nitrogen-Perturbed Above-Bandgap States in Dilute Gaas1-Xnx Alloys: A Microphotoluminescence Study

Magnetic field study of exciton nonradiative broadening excitation spectra in GaAs/AlGaAs quantum wells

Recombination dynamics of type-II excitons in (Ga,In)As/GaAs/Ga(As,Sb) heterostructures