Abstract:Scanning Kelvin Probe Microscopy (SKPM), a characterization method that could image surface potentials of materials at nanoscale, has extensive applications in characterizing the electric and electronic properties of metal, semiconductor and insulator materials. However, it requires deep understanding of the physics of the measuring process and being able to rule out factors that may cause artifacts to obtain accurate results.In the most commonly used dual-pass SKPM, the probe works in tapping mode to obtain surface topography information in first pass before lifting to a certain height to measure the surface potential. In this paper, we have demonstrated that the tapping-mode topography scan pass during the typical dual-pass SKPM measurement may trigger contact electrification between the probe and the sample, which leads to a charged sample surface and thus can introduce a significant error to the surface potential measurement.Contact electrification will happen when the probe enters into the repulsive force regime of tip-sample interaction and this can be detected by the phase shift of the probe vibration. In addition, the influences of scanning parameters, sample properties and probe's attributes have also been examined, in which lower free cantilever vibration amplitude, larger adhesion between the probe tip and the sample and lower cantilever spring constant of the probe are less likely to trigger contact electrification. Finally, we have put forward a guideline to rationally decouple contact electrification from surface potential measurement. They are decreasing the free amplitude, increasing the scanning amplitude, and using probes with lower spring constant.

Pulsed Force Kelvin Probe Force Microscopy-A New Type of Kelvin Probe Force Microscopy under Ambient Conditions

Kelvin Probe Force Microscopy and Its Application

Pulsed Force Kelvin Probe Force Microscopy through Integration of Lock-In Detection

Integrated Tapping Mode Kelvin Probe Force Microscopy with Photoinduced Force Microscopy for Correlative Chemical and Surface Potential Mapping

Spatially Resolved High Voltage Kelvin Probe Force Microcopy: A Novel Avenue for Examining Electrical Phenomena at Nanoscale

Full data acquisition in Kelvin Probe Force Microscopy: Mapping dynamic electric phenomena in real space

Single-Harmonic Response Open-Loop Kelvin-Probe Force Microscopy

Surface Potential Modeling and Reconstruction in Kelvin Probe Force Microscopy

Integrated Tapping Mode Kelvin Probe Force Microscopy with Photoinduced Force Microscopy for Correlative Chemical and Surface Potential Mapping (Small 37/2021)

Electrokinetics In Micro-Channeled Cantilevers: Extending The Toolbox For Reversible Colloidal Probes And Afm-Based Nanofluidics

Surface Profile Measurement of Micro-Optics by Using a Long Stroke Atomic Force Microscope

Spatial mapping of photovoltage and light-induced displacement of on-chip coupled piezo/photodiodes by Kelvin probe force microscopy under modulated illumination

Direct measurement of surface photovoltage by AC bias Kelvin probe force microscopy

Recent Development of PeakForce Tapping Mode Atomic Force Microscopy and Its Applications on Nanoscience

Intermodulation electrostatic force microscopy for imaging surface photo-voltage

Analytical Approach to the Local Contact Potential Difference on (001) Ionic Surfaces: Implications for Kelvin Probe Force Microscopy

Dual-bias modulation heterodyne Kelvin probe force microscopy in FM mode

Beyond the blur: using experimentally determined point spread functions to improve scanning Kelvin probe imaging

Excluding Contact Electrification in Surface Potential Measurement Using Scanning Kelvin Probe Microscopy.

Mapping fast evolution of transient surface photovoltage dynamics using G-Mode Kelvin probe force microscopy

Dependence of Electrostatic Patch Force Evaluation on the Lateral Resolution of Kelvin Probe Force Microscopy