N.S. Averkiev,L.E. Golub,M. Willander
Abstract:Electron spin relaxation caused by the D'yakonov-Perel' mechanism is investigated theoretically in asymmetrical A$_3$B$_5$ heterostructures. The total spin relaxation anisotropy is demonstrated for a wide range of structure parameters and temperatures. The spin relaxation rates dependences are derived for GaAs-based heterojunction and triangular quantum well. The calculations show a few orders of magnitude difference in spin relaxation times.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to explore the mechanism of electron spin relaxation in asymmetric heterostructures, especially the spin relaxation caused by the D'yakonov - Perel' mechanism. Specifically, the author studied the anisotropic behavior of the spin relaxation time under different structural parameters and temperatures, and calculated the spin relaxation rate in GaAs - based heterojunctions and triangular quantum wells.
### Research Background and Problems
1. **Importance of Spin Degrees of Freedom**
- Spin degrees of freedom have received extensive attention in the development of semiconductor physics.
- In recent years, the carrier spin characteristics in low - dimensional semiconductor structures have been deeply studied.
- In the field of electronics, the design of new devices such as spin transistors and spin computers based on heterostructures has aroused great interest in spin characteristics.
2. **Complexity of Spin - Orbit Interaction**
- Compared with bulk materials, the spin - orbit interaction in semiconductor heterostructures is more complex.
- The spin - orbit terms in two - dimensional systems are not only more interesting in form, but also some new terms that do not exist in bulk materials will appear.
3. **Spin Relaxation Mechanism**
- The paper mainly focuses on the D'yakonov - Perel' spin relaxation mechanism, which is the main spin relaxation mechanism in many III - V bulk semiconductors and heterostructures.
- This mechanism describes the change of the effective magnetic field due to scattering, which causes the diffusion of the spin direction and finally the loss of a specific spin orientation.
### Specific Problems
Through theoretical calculations and analysis, the paper has solved the following specific problems:
1. **Anisotropy of Spin Relaxation Time**
- The author shows the total anisotropy of the spin relaxation time in a wide range of structural parameters and temperatures.
- By calculating different types of asymmetric structures (such as heterojunctions and triangular quantum wells), the dependence of the spin relaxation rate is revealed.
2. **Influence of External Parameters**
- The influence of heteropotential asymmetry on spin relaxation is studied.
- It is found that external parameters can significantly affect the spin relaxation time, providing the possibility for spin engineering applications.
3. **Theoretical Model and Formula**
- The equations describing spin dynamics are established, and the expression of the spin relaxation rate is derived.
- The variation law of the spin relaxation time under different conditions (such as degenerate and non - degenerate electron gases) is analyzed.
### Conclusion
Through detailed theoretical analysis and calculations, the paper proves that in asymmetric heterostructures, the spin relaxation time shows significant anisotropy. This anisotropy can be controlled by adjusting structural parameters and external conditions, providing a theoretical basis for further spin engineering applications.
### Key Formulas
The key formulas involved in the paper include:
- Spin dynamics equation:
\[
\dot{S}_i(t)=-\frac{1}{2\hbar^2}\sum_{n = -\infty}^{\infty}\int_{0}^{\infty}d\varepsilon(F_ + - F_ -)\tau_n\text{Tr}\left\{[H_{ - n},[H_n,\sigma_j]]\sigma_i\right\}S_j(t)
\]
- Harmonics of the spin - orbit Hamiltonian:
\[
H_n=\oint\frac{d\phi_k}{2\pi}H_{SO}(k)\exp(-in\phi_k)
\]
- Scattering time:
\[
\frac{1}{\tau_n}=\oint d\theta W(\varepsilon,\theta)(1 - \cos n\theta)
\]
- Expression of spin relaxation time:
\[
\frac{1}{\tau_i}=\int_{0}^{\infty}d\varepsilon\left(\frac{\partial F_0}{\partial\varepsilon}\right)\Gamma_i(k)\Bigg/\int_{0}^{\infty}d\varepsilon\left(\frac{