Abstract:This article proposes grain-pattern-dependent threshold-voltage (<inline-formula> <tex-math notation="LaTeX">${V} _{\text {th}}$ </tex-math></inline-formula>) models to predict the variability of <inline-formula> <tex-math notation="LaTeX">${V} _{\text {th}}$ </tex-math></inline-formula> (<inline-formula> <tex-math notation="LaTeX">${V} _{\text {th}}$ </tex-math></inline-formula>) due to work-function (WK) fluctuation (WKF) for the vertically stacked multichannel gate-all-around (GAA) silicon (Si) nanosheet (NS) MOSFETs (NS-FETs). In addition, the models were applied to estimate the variability of static noise margin (SNM) of a 6-T SRAM, a CMOS inverter, and a single-stage common-source amplifier. To model this phenomenon, each perturbed local metal grain is counted by the superposition principle statistically. The model can be used to explain the values of <inline-formula> <tex-math notation="LaTeX">${V} _{\text {th}}$ </tex-math></inline-formula> by the location effect of metal grain for the vertically stacked multichannel devices. In addition, the model can predict the values of <inline-formula> <tex-math notation="LaTeX">${V} _{\text {th}}$ </tex-math></inline-formula> for the vertically stacked multichannel devices with different metal grain sizes. Compared with the results of 3-D device simulation (3D-DS), the error rate (ER) of our model prediction is less than 0.5%. According to the formulated model, an empirical expression is further advanced, which has continuous derivatives and can be easily incorporated into a circuit simulator to assess the variability of SNM of a 6-T SRAM, CMOS inverter, and single-stage common-source amplifier affected by the WKF, where the ERs are below 0.5%. The proposed models provide a valuable approach for estimating the impact of circuit design by the WKF.

Statistical Analysis of Intrinsic High-Frequency Characteristic Fluctuation of Emerging Silicon Gate-All-Around Nanosheet (NS) MOSFETs at Sub-3-nm Nodes

Statistical 3D Device Simulation of Full Fluctuations of Gate-All-Around Silicon Nanosheet MOSFETs at Sub-3-nm Technology Nodes

A Unified Statistical Analysis of Comprehensive Fluctuations of Gate-All-Around Silicon Nanosheet MOSFETs Induced by RDF, ITF, and WKF Simultaneously

Statistical Analysis of Metal Gate Workfunction Variability, Process Variation, and Random Dopant Fluctuation in Nano-CMOS Circuits

Artificial Neural Network-Based Modeling for Estimating the Effects of Various Random Fluctuations on DC/Analog/RF Characteristics of GAA Si Nanosheet FETs

A Nanosized-Metal-Grain Pattern-Dependent Threshold Voltage Model for the Work Function Fluctuation of GAA Si NW MOSFETs

Asymmetric characteristic fluctuation of undoped gate-all-around nanowire MOSFETs induced by random discrete dopants inside source/drain extensions

On Statistical Variation of MOSFETs Induced by Random-Discrete-Dopants and Random-Interface-Traps

High-Frequency Characteristic Fluctuations of Nano-MOSFET Circuit Induced by Random Dopants

A Nanosized-Metal-Grain Pattern-Dependent Model for Work-Function Fluctuation of Gate-All-Around Silicon Nanofin and Nanosheet MOSFETs

Statistical device simulation of characteristic fluctuation of 10-nm gate-all-around silicon nanowire MOSFETs induced by various discrete random dopants

Intrinsic Parameter Fluctuation and Process Variation Effect of Vertically Stacked Silicon Nanosheet Complementary Field-Effect Transistors

Electrical Characteristic and Power Fluctuations of GAA Si NS CFETs by Simultaneously Considering Six Process Variation Factors

DC/AC/RF Characteristic Fluctuations Induced by Various Random Discrete Dopants of Gate-All-Around Silicon Nanowire n-MOSFETs

Characteristic fluctuation of gate-all-around silicon nanowire MOSFETs induced by random discrete dopants from source/drain extensions

Nanosized-Metal-Grain-Pattern-Dependent Threshold-Voltage Models for the Vertically Stacked Multichannel Gate-All-Around Si Nanosheet MOSFETs and Their Applications in Circuit Simulation

Variability in nano-scale intrinsic silicon-on-thin-box MOSFETs (SOTB MOSFETs)

Simulation Study of Individual and Combined Sources of Intrinsic Parameter Fluctuations in Conventional Nano-MOSFETs

Three-Dimensional Statistical Simulation of Gate Leakage Fluctuations Due to Combined Interface Roughness and Random Dopants

Comprehensive Examination of Intrinsic-Parameter-Induced Characteristic Fluctuations in 16-nm-Gate CMOS Devices

Gate Leakage Analysis of Nano-MOSFETs Using Ensemble Full Band Monte Carlo with Quantum Correction