Abstract:Bismuth telluride-based alloys are the best performing thermoelectric materials near room temperature. Grain size refinement and nanostructuring are the core stratagems for improving thermoelectric and mechanical properties. However, the donor-like effect induced by grain size refinement strongly restricts the thermoelectric properties especially in the vicinity of room temperature. In this study, the formation mechanism for the donor-like effect in Bi2Te3-based compounds was revealed by synthesizing five batches of polycrystalline samples. We demonstrate that the donor-like effect in Bi2Te3-based compounds is strongly related to the vacancy defects (V(B)i(") and V-Te") induced by the fracturing process and oxygen in air for the first time. The oxygen-induced donor-like effect dramatically increases the carrier concentration from 2.5 x 10(19) cm(-3) for the zone melting ingot and bulks sintered with powders ground under an inert atmosphere to 7.5 x 1019 cm(-3), which is largely beyond the optimum carrier concentration and seriously deteriorates the thermoelectric performance. Moreover, it is found that both avoiding exposure to air and eliminating the thermal vacancy defects ((B)i(") and V-Te") via heat treatment before exposure to air can effectively remove the donor-like effect, producing almost the same carrier concentration and Seebeck coefficient as those of the zone melting ingot for these samples. Therefore, a defect equation of oxygen-induced donor-like effect was proposed and was further explicitly corroborated by positron annihilation measurement. With the removal of donor-like effect and improved texturing via multiple hot deformation (HD) processes, a maximum power factor of 3.5 mW m(-1) K-2 and a reproducible maximum ZT value of 1.01 near room temperature are achieved. This newly proposed defect equation of the oxygen-induced donor-like effect will provide a guideline for developing higher-performance V2VI3 polycrystalline materials for near-room-temperature applications.

Boron-Mediated Grain Boundary Engineering Enables Simultaneous Improvement of Thermoelectric and Mechanical Properties in N-Type Bi2 Te3.

Boron-Mediated Grain Boundary Engineering Enables Simultaneous Improvement of Thermoelectric and Mechanical Properties in N-Type Bi<sub>2</sub>Te<sub>3</sub>

Simultaneous Enhancement of the Thermoelectric and Mechanical Performance in One-Step Sintered n-Type Bi2Te3-Based Alloys via a Facile MgB2 Doping Strategy

Simultaneously Improved Thermoelectric and Mechanical Properties Driven by MgB2 Doping in Bi0.4Sb1.6Te3 Based Alloys

Thermoelectric Enhancements in PbTe Alloys Due to Dislocation‐Induced Strains and Converged Bands

Gibbs Adsorption and Zener Pinning Enable Mechanically Robust High‐Performance Bi2Te3‐Based Thermoelectric Devices

Enhancing the room temperature thermoelectric performance of n-type Bismuth-telluride-based polycrystalline materials by low-angle grain boundaries

Donor-like Effect and Thermoelectric Properties in N-Type Bi2Te3-based Compounds

Excellent thermoelectric performance of boron-doped n-type Mg3Sb2-based materials via the manipulation of grain boundary scattering and control of Mg content

Enhancing Thermoelectric Performance of N-Type Hot Deformed Bismuth-Telluride-Based Solid Solutions by Nonstoichiometry-Mediated Intrinsic Point Defects.

Donor-like Effect and Thermoelectric Performance in P-Type Bi0.5Sb1.5Te3 Alloy

Modulation of Vacancy Defects and Texture for High Performance N-Type Bi2 Te3 Via High Energy Refinement.

Improved thermoelectric properties of zone-melted p-type bismuth-telluride-based alloys for power generation

Highly Distorted Grain Boundary with an Enhanced Carrier/Phonon Segregation Effect Facilitates High-Performance Thermoelectric Materials

Effective Atomic Interface Engineering in Bi2Te2.7Se0.3 Thermoelectric Material by Atomic-Layer-deposition Approach

Modulation of Vacancy Defects and Texture for High Performance n‐Type Bi2Te3 via High Energy Refinement

Removing the Oxygen-Induced Donor-like Effect for High Thermoelectric Performance in n-Type Bi<sub>2</sub>Te<sub>3</sub>-Based Compounds

Enhancement in thermoelectric performance of bismuth telluride based alloys by multi-scale microstructural effects

Enhanced thermoelectric performance and mechanical strength of n-type BiTeSe materials produced via a composite strategy

Grain Boundary Engineering Enhances the Thermoelectric Properties of Y2Te3

Grain Recovery Facilitated Low-Angle Grain Boundaries and Texture for High-Performance Bisbte Alloys