Abstract:Bismuth telluride-based alloys are the best performing thermoelectric materials near room temperature. Grain size refinement and nanostructuring are the core stratagems for improving thermoelectric and mechanical properties. However, the donor-like effect induced by grain size refinement strongly restricts the thermoelectric properties especially in the vicinity of room temperature. In this study, the formation mechanism for the donor-like effect in Bi2Te3-based compounds was revealed by synthesizing five batches of polycrystalline samples. We demonstrate that the donor-like effect in Bi2Te3-based compounds is strongly related to the vacancy defects (VBi‴ and VTe···) induced by the fracturing process and oxygen in air for the first time. The oxygen-induced donor-like effect dramatically increases the carrier concentration from 2.5 × 1019 cm-3 for the zone melting ingot and bulks sintered with powders ground under an inert atmosphere to 7.5 × 1019 cm-3, which is largely beyond the optimum carrier concentration and seriously deteriorates the thermoelectric performance. Moreover, it is found that both avoiding exposure to air and eliminating the thermal vacancy defects (VBi‴ and VTe···) via heat treatment before exposure to air can effectively remove the donor-like effect, producing almost the same carrier concentration and Seebeck coefficient as those of the zone melting ingot for these samples. Therefore, a defect equation of oxygen-induced donor-like effect was proposed and was further explicitly corroborated by positron annihilation measurement. With the removal of donor-like effect and improved texturing via multiple hot deformation (HD) processes, a maximum power factor of 3.5 mW m-1 K-2 and a reproducible maximum ZT value of 1.01 near room temperature are achieved. This newly proposed defect equation of the oxygen-induced donor-like effect will provide a guideline for developing higher-performance V2VI3 polycrystalline materials for near-room-temperature applications.

Highly Distorted Grain Boundary with an Enhanced Carrier/Phonon Segregation Effect Facilitates High-Performance Thermoelectric Materials

Thermoelectric Performance Enhancement in Commercial Bi0.5Sb1.5Te3 Materials by Introducing Gradient Cu-Doped Grain Boundaries

Effective Atomic Interface Engineering in Bi2Te2.7Se0.3 Thermoelectric Material by Atomic-Layer-deposition Approach

Enhancing the room temperature thermoelectric performance of n-type Bismuth-telluride-based polycrystalline materials by low-angle grain boundaries

Enhancing the Thermoelectric Property of Bi2Te3 Through a Facile Design of Interfacial Phonon Scattering

Suppressing the donor-like effect via fast extrusion engineering for high thermoelectric performance of polycrystalline Bi2Te2.79Se0.21

Improvement of Thermoelectric Performance of Bi(2)Te(2.7)Se(0.3)via Grain Boundary Engineering with Melting KOH

Decoupling Carrier-Phonon Scattering Boosts the Thermoelectric Performance of N-Type GeTe-Based Materials.

Modulation of Vacancy Defects and Texture for High Performance N-Type Bi2 Te3 Via High Energy Refinement.

Construct Amorphous Polymer Interface to Enhance the Thermoelectric Performance of Commercial Bi0.5Sb1.5Te3 Materials

Valence Band Modification and Enhanced Phonon‐Phonon Interactions for High Thermoelectric Performance in GeTe

Removing the Oxygen-Induced Donor-like Effect for High Thermoelectric Performance in n-Type Bi 2 Te 3 -Based Compounds

Modulation of Vacancy Defects and Texture for High Performance n‐Type Bi2Te3 via High Energy Refinement

Grain Boundary Engineering Enhances the Thermoelectric Properties of Y2Te3

Intrinsic vacancy suppression and band convergence to enhance thermoelectric performance of (Ge, Bi, Sb)Te crystals

Multi-scale hierarchical microstructure modulation towards high room temperature thermoelectric performance in <i>n</i>-type Bi<sub>2</sub>Te<sub>3</sub>-based alloys

Functionally Separated Electronic Band Engineering Via Multi-Element Doping Plus High-Density Defects Advances Board-Temperature-range Thermoelectric Performance in GeTe

Ordered Grain Boundary Reconstruction Induces High-Efficiency Thermoelectric Power Generation in SnTe

Synergistical Enhancement of Thermoelectric Properties in N‐type Bi2O2Se by Carrier Engineering and Hierarchical Microstructure

Synergistic modulation of mobility and thermal conductivity in (Bi,Sb)2Te3 towards high thermoelectric performance

Strong Phonon-Phonon Interactions Securing Extraordinary Thermoelectric Ge 1- x Sb x Te with Zn-Alloying-Induced Band Alignment.