Abstract:Presently deep learning (DL) techniques are massively used in the semiconductor industry. At the same time, applying a deep learning approach for small datasets is also an immense challenge as larger dataset generation needs more computational time-cost factors for technology computer-aided design (TCAD) simulation. In this paper, to overcome the aforesaid issue, a hybrid DL-aided prediction of electrical characteristics of the multichannel devices induced by work function fluctuation (WKF) with a smaller dataset is proposed. For the first time, an amalgamation approach of two deep learning algorithms (i.e.1D-CNN and LSTM) is implemented for all four channels (1 to 4 channels) of gate-all-around (GAA) silicon Nanosheet and Nanofin MOSFETs (NS-FETs and NF-FETs). The proposed joint learning framework combines a one-dimensional convolutional neural network (1D-CNN) with long short-term memory (LSTM) model. In this architecture, CNN can extract the features efficiently from the input WKF, and LSTM identifies the historical sequence of the captured features of the input regression data. To illustrate the excellency of the proposed approach, a comparative study of our hybrid model along with three individual DL models i.e. 1D-CNN and LSTM including a baseline multilevel perceptron (MLP) model are demonstrated for a promising small dataset (i.e.1100 samples). The results indicate a superior prediction of 1D-CNN-LSTM in terms of root mean square error (RMSE) with an average value of $\mathrm {1.7943 X}{10}^{-7}$ and $\text{R}^{2}$ Score with an average value of 96.18% within the shortest time span in contrast to the other three algorithms. Finally, it can be quantified according to the evaluation and performance that hybrid methodology not only adopts the complexity of both NS- and NF-FETs, but also estimates the characteristics of all four channels of it efficiently with a smaller dataset, lesser time span, and reduced computational cost.

Deep Learning Algorithms for the Work Function Fluctuation of Random Nanosized Metal Grains on Gate-All-Around Silicon Nanowire MOSFETs

Deep Learning Approach to Inverse Grain Pattern of Nanosized Metal Gate for Multichannel Gate-All-Around Silicon Nanosheet MOSFETs

Machine Learning Aided Device Simulation of Work Function Fluctuation for Multichannel Gate-All-Around Silicon Nanosheet MOSFETs

Deep Learning Approach to Modeling and Exploring Random Sources of Gate-All-Around Silicon Nanosheet MOSFETs

Application of Deep Artificial Neural Network to Model Characteristic Fluctuation of Multi-Channel Gate-All-Around Silicon Nanosheet and Nanofin MOSFETs Induced by Random Nanosized Metal Grains

Deep Learning Approach to Estimating Work Function Fluctuation of Gate-All-Around Silicon Nanosheet MOSFETs with A Ferroelectric HZO Layer

A Machine Learning Approach to Modeling Intrinsic Parameter Fluctuation of Gate-All-Around Si Nanosheet MOSFETs

A Physics-Informed Neural Networks Algorithm for Simulating Semiconductor Devices

Artificial Neural Network-Based Modeling for Estimating the Effects of Various Random Fluctuations on DC/Analog/RF Characteristics of GAA Si Nanosheet FETs

A Nanosized-Metal-Grain Pattern-Dependent Threshold Voltage Model for the Work Function Fluctuation of GAA Si NW MOSFETs

A Nanosized-Metal-Grain Pattern-Dependent Model for Work-Function Fluctuation of Gate-All-Around Silicon Nanofin and Nanosheet MOSFETs

Intelligent Modeling of Electrical Characteristics of Multi-Channel Gate All Around Silicon Nanosheet MOSFETs Induced by Work Function Fluctuation

A Hybrid 1D-CNN-LSTM Technique for WKF-Induced Variability of Multi-Channel GAA NS- and NF-FETs

Nanosized-Metal-Grain-Pattern-Dependent Threshold-Voltage Models for the Vertically Stacked Multichannel Gate-All-Around Si Nanosheet MOSFETs and Their Applications in Circuit Simulation

Simulation of electrical characteristic fluctuation in 16-nm FinFETs' and circuits

An Artificial Neural Network Model for Electro-Thermal Effect Affected Hot Carrier Injection Reliability in 14-nm FinFETs

A Comprehensive Technique Based on Machine Learning for Device and Circuit Modeling of Gate-All-Around Nanosheet Transistors

Estimating the Process Variation Effects of Stacked Gate All Around Si Nanosheet CFETs Using Artificial Neural Network Modeling Framework

Statistical 3D Device Simulation of Full Fluctuations of Gate-All-Around Silicon Nanosheet MOSFETs at Sub-3-nm Technology Nodes

Process variation effect, metal-gate work-function fluctuation and random dopant fluctuation of 10-nm gate-all-around silicon nanowire MOSFET devices

Work-Function Fluctuation of Gate-All-Around Silicon Nanowire n-MOSFETs: A Unified Comparison Between Cuboid and Voronoi Methods